Effect of nitridation of si nanoparticles on the performance of quantum-dot sensitized solar cells

Giichiro Uchida; Kosuke Yamamoto; Muneharu Sato; Yuki Kawashima; Kenta Nakahara; Kunihiro Kamataki; Naho Itagaki; Kazunori Koga; Masaharu Shiratani

doi:10.1143/JJAP.51.01AD01

Effect of nitridation of si nanoparticles on the performance of quantum-dot sensitized solar cells

Giichiro Uchida, Kosuke Yamamoto, Muneharu Sato, Yuki Kawashima, Kenta Nakahara, Kunihiro Kamataki, Naho Itagaki, Kazunori Koga, Masaharu Shiratani

Research output: Contribution to journal › Article

15 Citations (Scopus)

Abstract

We developed Si quantum-dot (QD) sensitized solar cells using nitridated Si nanoparticle films. The Si/N content ratio of the Si nanoparticle films was combinatorially controlled in double multi-hollow discharge plasma chemical vapor deposition (CVD) process in a SiH ₄/H ₂ and N _2f gas mixture. The short-circuit current density of Si QD sensitized solar cells increases by a factor of 1.3 with the nitridation of Si nanoparticles, and a high photon-to-current conversion efficiency of 40% was achieved at a short wavelength of 350 nm.

Original language	English
Article number	01AD01
Journal	Japanese journal of applied physics
Volume	51
Issue number	1 PART 2
DOIs	https://doi.org/10.1143/JJAP.51.01AD01
Publication status	Published - Jan 1 2012

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All Science Journal Classification (ASJC) codes

Engineering(all)
Physics and Astronomy(all)

Cite this

Uchida, G., Yamamoto, K., Sato, M., Kawashima, Y., Nakahara, K., Kamataki, K., ... Shiratani, M. (2012). Effect of nitridation of si nanoparticles on the performance of quantum-dot sensitized solar cells. Japanese journal of applied physics, 51(1 PART 2), [01AD01]. https://doi.org/10.1143/JJAP.51.01AD01

Effect of nitridation of si nanoparticles on the performance of quantum-dot sensitized solar cells. / Uchida, Giichiro; Yamamoto, Kosuke; Sato, Muneharu; Kawashima, Yuki; Nakahara, Kenta; Kamataki, Kunihiro ; Itagaki, Naho ; Koga, Kazunori ; Shiratani, Masaharu.

In: Japanese journal of applied physics, Vol. 51, No. 1 PART 2, 01AD01, 01.01.2012.

Research output: Contribution to journal › Article

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Access to Document

10.1143/JJAP.51.01AD01