Effect of nitridation of si nanoparticles on the performance of quantum-dot sensitized solar cells

Giichiro Uchida, Kosuke Yamamoto, Muneharu Sato, Yuki Kawashima, Kenta Nakahara, Kunihiro Kamataki, Naho Itagaki, Kazunori Koga, Masaharu Shiratani

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Abstract

We developed Si quantum-dot (QD) sensitized solar cells using nitridated Si nanoparticle films. The Si/N content ratio of the Si nanoparticle films was combinatorially controlled in double multi-hollow discharge plasma chemical vapor deposition (CVD) process in a SiH 4/H 2 and N 2f gas mixture. The short-circuit current density of Si QD sensitized solar cells increases by a factor of 1.3 with the nitridation of Si nanoparticles, and a high photon-to-current conversion efficiency of 40% was achieved at a short wavelength of 350 nm.

Original languageEnglish
Article number01AD01
JournalJapanese journal of applied physics
Volume51
Issue number1 PART 2
DOIs
Publication statusPublished - Jan 1 2012

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All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

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