Abstract
We developed Si quantum-dot (QD) sensitized solar cells using nitridated Si nanoparticle films. The Si/N content ratio of the Si nanoparticle films was combinatorially controlled in double multi-hollow discharge plasma chemical vapor deposition (CVD) process in a SiH 4/H 2 and N 2f gas mixture. The short-circuit current density of Si QD sensitized solar cells increases by a factor of 1.3 with the nitridation of Si nanoparticles, and a high photon-to-current conversion efficiency of 40% was achieved at a short wavelength of 350 nm.
Original language | English |
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Article number | 01AD01 |
Journal | Japanese journal of applied physics |
Volume | 51 |
Issue number | 1 PART 2 |
DOIs | |
Publication status | Published - Jan 1 2012 |
All Science Journal Classification (ASJC) codes
- Engineering(all)
- Physics and Astronomy(all)