Effect of nitridation of si nanoparticles on the performance of quantum-dot sensitized solar cells

Giichiro Uchida; Kosuke Yamamoto; Muneharu Sato; Yuki Kawashima; Kenta Nakahara; Kunihiro Kamataki; Naho Itagaki; Kazunori Koga; Masaharu Shiratani

doi:10.1143/JJAP.51.01AD01

Effect of nitridation of si nanoparticles on the performance of quantum-dot sensitized solar cells

Giichiro Uchida, Kosuke Yamamoto, Muneharu Sato, Yuki Kawashima, Kenta Nakahara, Kunihiro Kamataki, Naho Itagaki, Kazunori Koga, Masaharu Shiratani

Research output: Contribution to journal › Article › peer-review

17 Citations (Scopus)

Abstract

We developed Si quantum-dot (QD) sensitized solar cells using nitridated Si nanoparticle films. The Si/N content ratio of the Si nanoparticle films was combinatorially controlled in double multi-hollow discharge plasma chemical vapor deposition (CVD) process in a SiH ₄/H ₂ and N _2f gas mixture. The short-circuit current density of Si QD sensitized solar cells increases by a factor of 1.3 with the nitridation of Si nanoparticles, and a high photon-to-current conversion efficiency of 40% was achieved at a short wavelength of 350 nm.

Original language	English
Article number	01AD01
Journal	Japanese journal of applied physics
Volume	51
Issue number	1 PART 2
DOIs	https://doi.org/10.1143/JJAP.51.01AD01
Publication status	Published - Jan 1 2012

All Science Journal Classification (ASJC) codes

Engineering(all)
Physics and Astronomy(all)

Access to Document

10.1143/JJAP.51.01AD01

Fingerprint Dive into the research topics of 'Effect of nitridation of si nanoparticles on the performance of quantum-dot sensitized solar cells'. Together they form a unique fingerprint.

Cite this

Effect of nitridation of si nanoparticles on the performance of quantum-dot sensitized solar cells. / Uchida, Giichiro; Yamamoto, Kosuke; Sato, Muneharu; Kawashima, Yuki; Nakahara, Kenta; Kamataki, Kunihiro ; Itagaki, Naho ; Koga, Kazunori ; Shiratani, Masaharu.

In: Japanese journal of applied physics, Vol. 51, No. 1 PART 2, 01AD01, 01.01.2012.

Research output: Contribution to journal › Article › peer-review

@article{e5cab47ec7b24133ab48a7153c709319,

title = "Effect of nitridation of si nanoparticles on the performance of quantum-dot sensitized solar cells",

abstract = "We developed Si quantum-dot (QD) sensitized solar cells using nitridated Si nanoparticle films. The Si/N content ratio of the Si nanoparticle films was combinatorially controlled in double multi-hollow discharge plasma chemical vapor deposition (CVD) process in a SiH 4/H 2 and N 2f gas mixture. The short-circuit current density of Si QD sensitized solar cells increases by a factor of 1.3 with the nitridation of Si nanoparticles, and a high photon-to-current conversion efficiency of 40% was achieved at a short wavelength of 350 nm.",

author = "Giichiro Uchida and Kosuke Yamamoto and Muneharu Sato and Yuki Kawashima and Kenta Nakahara and Kunihiro Kamataki and Naho Itagaki and Kazunori Koga and Masaharu Shiratani",

year = "2012",

month = jan,

day = "1",

doi = "10.1143/JJAP.51.01AD01",

language = "English",

volume = "51",

journal = "Japanese Journal of Applied Physics",

issn = "0021-4922",

publisher = "The Japan Society of Applied Physics",

number = "1 PART 2",

}

TY - JOUR

T1 - Effect of nitridation of si nanoparticles on the performance of quantum-dot sensitized solar cells

AU - Uchida, Giichiro

AU - Yamamoto, Kosuke

AU - Sato, Muneharu

AU - Kawashima, Yuki

AU - Nakahara, Kenta

AU - Kamataki, Kunihiro

AU - Itagaki, Naho

AU - Koga, Kazunori

AU - Shiratani, Masaharu

PY - 2012/1/1

Y1 - 2012/1/1

N2 - We developed Si quantum-dot (QD) sensitized solar cells using nitridated Si nanoparticle films. The Si/N content ratio of the Si nanoparticle films was combinatorially controlled in double multi-hollow discharge plasma chemical vapor deposition (CVD) process in a SiH 4/H 2 and N 2f gas mixture. The short-circuit current density of Si QD sensitized solar cells increases by a factor of 1.3 with the nitridation of Si nanoparticles, and a high photon-to-current conversion efficiency of 40% was achieved at a short wavelength of 350 nm.

AB - We developed Si quantum-dot (QD) sensitized solar cells using nitridated Si nanoparticle films. The Si/N content ratio of the Si nanoparticle films was combinatorially controlled in double multi-hollow discharge plasma chemical vapor deposition (CVD) process in a SiH 4/H 2 and N 2f gas mixture. The short-circuit current density of Si QD sensitized solar cells increases by a factor of 1.3 with the nitridation of Si nanoparticles, and a high photon-to-current conversion efficiency of 40% was achieved at a short wavelength of 350 nm.

UR - http://www.scopus.com/inward/record.url?scp=84863410037&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84863410037&partnerID=8YFLogxK

U2 - 10.1143/JJAP.51.01AD01

DO - 10.1143/JJAP.51.01AD01

M3 - Article

AN - SCOPUS:84863410037

VL - 51

JO - Japanese Journal of Applied Physics

JF - Japanese Journal of Applied Physics

SN - 0021-4922

IS - 1 PART 2

M1 - 01AD01

ER -