TY - JOUR
T1 - Effect of nitrogen and aluminium on silicon carbide polytype stability
AU - Nishizawa, S.
AU - F.Mercier,
N1 - Funding Information:
This study was partly supported by Grant-in-Aid for Scientific Research from the Japanese Ministry of Education, Science, Sports and Culture .
Publisher Copyright:
© 2019 Elsevier B.V.
PY - 2019/7/15
Y1 - 2019/7/15
N2 - In this study, effects of nitrogen and aluminium dopant on the SiC crystal structure and polytype stability were investigated by density functional theory. With taking account of the stacking energy of additional bilayer, the carbon terminated surface as seed surface with nitrogen doped condition is the only condition of 4H single polytype SiC growth. Under the other conditions, polytype conversion and inclusion might occurre.
AB - In this study, effects of nitrogen and aluminium dopant on the SiC crystal structure and polytype stability were investigated by density functional theory. With taking account of the stacking energy of additional bilayer, the carbon terminated surface as seed surface with nitrogen doped condition is the only condition of 4H single polytype SiC growth. Under the other conditions, polytype conversion and inclusion might occurre.
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U2 - 10.1016/j.jcrysgro.2019.04.018
DO - 10.1016/j.jcrysgro.2019.04.018
M3 - Article
AN - SCOPUS:85064952278
SN - 0022-0248
VL - 518
SP - 99
EP - 102
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
ER -