Effect of nitrogen plasma conditions on electrical properties of silicon oxynitrided thin films for flash memory applications

Akihiro Ikeda, M. Abd Elnaby, Reiji Hattori, Yukinori Kuroki

Research output: Contribution to journalArticle

14 Citations (Scopus)

Abstract

Thin silicon oxynitride films were deposited on Si(100) substrates using nitrogen plasma at various exposure times, followed by thermal oxidation in dry O2 without the use of toxic or global warming gases. Secondary ion mass spectroscopy measurements confirmed that nitrogen is confined to the immediate vicinity of the surface. The damage induced in the thin silicon oxynitride film after exposure to nitrogen plasma for between 10 and 60 s was estimated from an analysis of capacitance-voltage and current-voltage measurements. Generation of different densities of positive oxide charge was observed. Correlation between the local bonding structures in the oxynitride films and the electrically active defective states at the oxynitride/Si interface are also discussed. It is proposed that improved electrical characteristics such as positive charge trapping, interface state density, leakage current, and stress immunity of thin silicon oxynitride films, can be obtained by using an optimal plasma exposure time of approximately 30 s. The preliminary results obtained in this study indicate that these oxynitride films can be considered as potential candidates for ultra-thin gate oxide flash memory applications.

Original languageEnglish
Pages (from-to)111-116
Number of pages6
JournalThin Solid Films
Volume386
Issue number1
DOIs
Publication statusPublished - May 1 2001

Fingerprint

Nitrogen plasma
nitrogen plasma
Flash memory
oxynitrides
Silicon
flash
Electric properties
electrical properties
Thin films
silicon
thin films
Oxides
Charge trapping
Interface states
Poisons
Voltage measurement
Global warming
Electric current measurement
global warming
oxides

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

Cite this

Effect of nitrogen plasma conditions on electrical properties of silicon oxynitrided thin films for flash memory applications. / Ikeda, Akihiro; Abd Elnaby, M.; Hattori, Reiji; Kuroki, Yukinori.

In: Thin Solid Films, Vol. 386, No. 1, 01.05.2001, p. 111-116.

Research output: Contribution to journalArticle

@article{cf4a9860926643b08786049208f8f99b,
title = "Effect of nitrogen plasma conditions on electrical properties of silicon oxynitrided thin films for flash memory applications",
abstract = "Thin silicon oxynitride films were deposited on Si(100) substrates using nitrogen plasma at various exposure times, followed by thermal oxidation in dry O2 without the use of toxic or global warming gases. Secondary ion mass spectroscopy measurements confirmed that nitrogen is confined to the immediate vicinity of the surface. The damage induced in the thin silicon oxynitride film after exposure to nitrogen plasma for between 10 and 60 s was estimated from an analysis of capacitance-voltage and current-voltage measurements. Generation of different densities of positive oxide charge was observed. Correlation between the local bonding structures in the oxynitride films and the electrically active defective states at the oxynitride/Si interface are also discussed. It is proposed that improved electrical characteristics such as positive charge trapping, interface state density, leakage current, and stress immunity of thin silicon oxynitride films, can be obtained by using an optimal plasma exposure time of approximately 30 s. The preliminary results obtained in this study indicate that these oxynitride films can be considered as potential candidates for ultra-thin gate oxide flash memory applications.",
author = "Akihiro Ikeda and {Abd Elnaby}, M. and Reiji Hattori and Yukinori Kuroki",
year = "2001",
month = "5",
day = "1",
doi = "10.1016/S0040-6090(00)01888-5",
language = "English",
volume = "386",
pages = "111--116",
journal = "Thin Solid Films",
issn = "0040-6090",
publisher = "Elsevier",
number = "1",

}

TY - JOUR

T1 - Effect of nitrogen plasma conditions on electrical properties of silicon oxynitrided thin films for flash memory applications

AU - Ikeda, Akihiro

AU - Abd Elnaby, M.

AU - Hattori, Reiji

AU - Kuroki, Yukinori

PY - 2001/5/1

Y1 - 2001/5/1

N2 - Thin silicon oxynitride films were deposited on Si(100) substrates using nitrogen plasma at various exposure times, followed by thermal oxidation in dry O2 without the use of toxic or global warming gases. Secondary ion mass spectroscopy measurements confirmed that nitrogen is confined to the immediate vicinity of the surface. The damage induced in the thin silicon oxynitride film after exposure to nitrogen plasma for between 10 and 60 s was estimated from an analysis of capacitance-voltage and current-voltage measurements. Generation of different densities of positive oxide charge was observed. Correlation between the local bonding structures in the oxynitride films and the electrically active defective states at the oxynitride/Si interface are also discussed. It is proposed that improved electrical characteristics such as positive charge trapping, interface state density, leakage current, and stress immunity of thin silicon oxynitride films, can be obtained by using an optimal plasma exposure time of approximately 30 s. The preliminary results obtained in this study indicate that these oxynitride films can be considered as potential candidates for ultra-thin gate oxide flash memory applications.

AB - Thin silicon oxynitride films were deposited on Si(100) substrates using nitrogen plasma at various exposure times, followed by thermal oxidation in dry O2 without the use of toxic or global warming gases. Secondary ion mass spectroscopy measurements confirmed that nitrogen is confined to the immediate vicinity of the surface. The damage induced in the thin silicon oxynitride film after exposure to nitrogen plasma for between 10 and 60 s was estimated from an analysis of capacitance-voltage and current-voltage measurements. Generation of different densities of positive oxide charge was observed. Correlation between the local bonding structures in the oxynitride films and the electrically active defective states at the oxynitride/Si interface are also discussed. It is proposed that improved electrical characteristics such as positive charge trapping, interface state density, leakage current, and stress immunity of thin silicon oxynitride films, can be obtained by using an optimal plasma exposure time of approximately 30 s. The preliminary results obtained in this study indicate that these oxynitride films can be considered as potential candidates for ultra-thin gate oxide flash memory applications.

UR - http://www.scopus.com/inward/record.url?scp=0342592264&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0342592264&partnerID=8YFLogxK

U2 - 10.1016/S0040-6090(00)01888-5

DO - 10.1016/S0040-6090(00)01888-5

M3 - Article

AN - SCOPUS:0342592264

VL - 386

SP - 111

EP - 116

JO - Thin Solid Films

JF - Thin Solid Films

SN - 0040-6090

IS - 1

ER -