Effect of nitrogen plasma conditions on the electrical properties of silicon oxynitrided thin films for flash memory applications

M. Abd Elnaby, A. Ikeda, Reiji Hattori, Y. Kuroki

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

Si[100] substrates were oxynitrided with nitrogen plasma, at different exposure times, followed by thermal oxidation in dry O2 without using any harmful or global warming gas. Secondary ion mass spectroscopy (SIMS) measurements confirm that nitrogen is confined to the immediate vicinity of the surface. The damage induced in the thin SiO2-Si system after an exposure to nitrogen plasma at different exposure times ranged from 10 to 60 s was estimated from the analysis of C-V and I-V measurements. A generation of different densities of positive oxide charge has been observed. Correlation between the local bonding structures in the oxynitride films and the electrically active defective states at the Si-SiO2 interface are also discussed. It is proposed that improved electrical characteristics for positive charge trapping, interface state density, leakage current, and stress immunity of the oxynitride films could be obtained by using an optimal plasma exposure time of about 30 s. The preliminary results obtained indicate that these oxynitride films can be considered as potential candidates for ultra thin gate oxide and flash memory applications.

Original languageEnglish
Title of host publicationICM 2000 - Proceedings of the 12th International Conference on Microelectronics
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages251-256
Number of pages6
Volume2000-October
ISBN (Electronic)9643600572
DOIs
Publication statusPublished - Oct 31 2000
Event12th International Conference on Microelectronics, ICM 2000 - Tehran, Iran, Islamic Republic of
Duration: Oct 31 2000Nov 2 2000

Other

Other12th International Conference on Microelectronics, ICM 2000
CountryIran, Islamic Republic of
CityTehran
Period10/31/0011/2/00

Fingerprint

Nitrogen plasma
Flash memory
Electric properties
Thin films
Silicon
Charge trapping
Oxides
Interface states
Global warming
Leakage currents
Spectroscopy
Nitrogen
Plasmas
Oxidation
Ions
Substrates
Gases

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

Cite this

Abd Elnaby, M., Ikeda, A., Hattori, R., & Kuroki, Y. (2000). Effect of nitrogen plasma conditions on the electrical properties of silicon oxynitrided thin films for flash memory applications. In ICM 2000 - Proceedings of the 12th International Conference on Microelectronics (Vol. 2000-October, pp. 251-256). [916455] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ICM.2000.916455

Effect of nitrogen plasma conditions on the electrical properties of silicon oxynitrided thin films for flash memory applications. / Abd Elnaby, M.; Ikeda, A.; Hattori, Reiji; Kuroki, Y.

ICM 2000 - Proceedings of the 12th International Conference on Microelectronics. Vol. 2000-October Institute of Electrical and Electronics Engineers Inc., 2000. p. 251-256 916455.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abd Elnaby, M, Ikeda, A, Hattori, R & Kuroki, Y 2000, Effect of nitrogen plasma conditions on the electrical properties of silicon oxynitrided thin films for flash memory applications. in ICM 2000 - Proceedings of the 12th International Conference on Microelectronics. vol. 2000-October, 916455, Institute of Electrical and Electronics Engineers Inc., pp. 251-256, 12th International Conference on Microelectronics, ICM 2000, Tehran, Iran, Islamic Republic of, 10/31/00. https://doi.org/10.1109/ICM.2000.916455
Abd Elnaby M, Ikeda A, Hattori R, Kuroki Y. Effect of nitrogen plasma conditions on the electrical properties of silicon oxynitrided thin films for flash memory applications. In ICM 2000 - Proceedings of the 12th International Conference on Microelectronics. Vol. 2000-October. Institute of Electrical and Electronics Engineers Inc. 2000. p. 251-256. 916455 https://doi.org/10.1109/ICM.2000.916455
Abd Elnaby, M. ; Ikeda, A. ; Hattori, Reiji ; Kuroki, Y. / Effect of nitrogen plasma conditions on the electrical properties of silicon oxynitrided thin films for flash memory applications. ICM 2000 - Proceedings of the 12th International Conference on Microelectronics. Vol. 2000-October Institute of Electrical and Electronics Engineers Inc., 2000. pp. 251-256
@inproceedings{dfa94dbebf1a46f6b26e51c5ca522612,
title = "Effect of nitrogen plasma conditions on the electrical properties of silicon oxynitrided thin films for flash memory applications",
abstract = "Si[100] substrates were oxynitrided with nitrogen plasma, at different exposure times, followed by thermal oxidation in dry O2 without using any harmful or global warming gas. Secondary ion mass spectroscopy (SIMS) measurements confirm that nitrogen is confined to the immediate vicinity of the surface. The damage induced in the thin SiO2-Si system after an exposure to nitrogen plasma at different exposure times ranged from 10 to 60 s was estimated from the analysis of C-V and I-V measurements. A generation of different densities of positive oxide charge has been observed. Correlation between the local bonding structures in the oxynitride films and the electrically active defective states at the Si-SiO2 interface are also discussed. It is proposed that improved electrical characteristics for positive charge trapping, interface state density, leakage current, and stress immunity of the oxynitride films could be obtained by using an optimal plasma exposure time of about 30 s. The preliminary results obtained indicate that these oxynitride films can be considered as potential candidates for ultra thin gate oxide and flash memory applications.",
author = "{Abd Elnaby}, M. and A. Ikeda and Reiji Hattori and Y. Kuroki",
year = "2000",
month = "10",
day = "31",
doi = "10.1109/ICM.2000.916455",
language = "English",
volume = "2000-October",
pages = "251--256",
booktitle = "ICM 2000 - Proceedings of the 12th International Conference on Microelectronics",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
address = "United States",

}

TY - GEN

T1 - Effect of nitrogen plasma conditions on the electrical properties of silicon oxynitrided thin films for flash memory applications

AU - Abd Elnaby, M.

AU - Ikeda, A.

AU - Hattori, Reiji

AU - Kuroki, Y.

PY - 2000/10/31

Y1 - 2000/10/31

N2 - Si[100] substrates were oxynitrided with nitrogen plasma, at different exposure times, followed by thermal oxidation in dry O2 without using any harmful or global warming gas. Secondary ion mass spectroscopy (SIMS) measurements confirm that nitrogen is confined to the immediate vicinity of the surface. The damage induced in the thin SiO2-Si system after an exposure to nitrogen plasma at different exposure times ranged from 10 to 60 s was estimated from the analysis of C-V and I-V measurements. A generation of different densities of positive oxide charge has been observed. Correlation between the local bonding structures in the oxynitride films and the electrically active defective states at the Si-SiO2 interface are also discussed. It is proposed that improved electrical characteristics for positive charge trapping, interface state density, leakage current, and stress immunity of the oxynitride films could be obtained by using an optimal plasma exposure time of about 30 s. The preliminary results obtained indicate that these oxynitride films can be considered as potential candidates for ultra thin gate oxide and flash memory applications.

AB - Si[100] substrates were oxynitrided with nitrogen plasma, at different exposure times, followed by thermal oxidation in dry O2 without using any harmful or global warming gas. Secondary ion mass spectroscopy (SIMS) measurements confirm that nitrogen is confined to the immediate vicinity of the surface. The damage induced in the thin SiO2-Si system after an exposure to nitrogen plasma at different exposure times ranged from 10 to 60 s was estimated from the analysis of C-V and I-V measurements. A generation of different densities of positive oxide charge has been observed. Correlation between the local bonding structures in the oxynitride films and the electrically active defective states at the Si-SiO2 interface are also discussed. It is proposed that improved electrical characteristics for positive charge trapping, interface state density, leakage current, and stress immunity of the oxynitride films could be obtained by using an optimal plasma exposure time of about 30 s. The preliminary results obtained indicate that these oxynitride films can be considered as potential candidates for ultra thin gate oxide and flash memory applications.

UR - http://www.scopus.com/inward/record.url?scp=84979518371&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84979518371&partnerID=8YFLogxK

U2 - 10.1109/ICM.2000.916455

DO - 10.1109/ICM.2000.916455

M3 - Conference contribution

AN - SCOPUS:84979518371

VL - 2000-October

SP - 251

EP - 256

BT - ICM 2000 - Proceedings of the 12th International Conference on Microelectronics

PB - Institute of Electrical and Electronics Engineers Inc.

ER -