Effect of oxidizing ambient on the generation of microdefects in low-dose SIMOX wafers

J. Jablonski, M. Saito, Y. Miyamura, T. Katayama, S. Nakashima

Research output: Contribution to conferencePaperpeer-review

Abstract

The effect of the oxidizing ambient of the post-implantation high-temperature heat treatment on the generation of microdefects in the top silicon layer of low-dose SIMOX wafers was investigated by cross-sectional transmission electron microscopy. Results show that the oxidation ambient is responsible for the generation of fully developed tetrahedral stacking faults and tetragonal stacking faults in low-dose SIMOX wafers. These faults can be minimized by increasing the oxygen pressure in the annealing ambient.

Original languageEnglish
Pages30-31
Number of pages2
Publication statusPublished - 1996
Externally publishedYes
EventProceedings of the 1996 IEEE International SOI Conference - Sanibel Island, FL, USA
Duration: Sep 30 1996Oct 3 1996

Conference

ConferenceProceedings of the 1996 IEEE International SOI Conference
CitySanibel Island, FL, USA
Period9/30/9610/3/96

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Fingerprint

Dive into the research topics of 'Effect of oxidizing ambient on the generation of microdefects in low-dose SIMOX wafers'. Together they form a unique fingerprint.

Cite this