Low-resistivity and high-transmittance Al-doped ZnO (AZO) thin films were obtained by pulsed laser deposition with the substrate at room temperature. The electrical, optical, and structural properties of the AZO thin films deposited at various oxygen gas pressures (PO2) were investigated. X-ray diffraction shows that the AZO thin films have (002) preferred orientation and the diffraction angle of the (002) plane shifts to a higher value with increasing oxygen gas pressure. All AZO thin films deposited under ambient oxygen gas pressure conditions have an optical transmittance of over 80% in the visible region. AZO thin films deposited at lower PO2 of ≤1 Pa have resistivities of <10-3 Σ cm that increase with increasing PO2 > 1 Pa. The AZO film deposited at PO2 = 1 Pa had the lowest resistivity (5:8 × 10-4 Ω cm) with a high carrier concentration of 1.1 × 1021 cm-3.
All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)