The plasma oxidation of hydrogen methyl siloxane based porous spin on glass (SOG) films. The Fourier transform infrared (FTIR) analyses show that the intensities of hydrophobic groups decrease with plasma exposure time. An increase in the OH intensity and decrease in the film thickness were also observed. From ellipsometric analyses, it is determined that the loss of hydrophobic groups causes spontaneous film shrinkage. When the substrate was biased during O2 plasma exposure, less film oxidation, shrinkage and moisture uptake were observed. The mechanism that causes the suppressed oxidation was discussed from the point of view of competition between oxidation and sputtering.
|Number of pages||5|
|Journal||Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures|
|Publication status||Published - May 2000|
All Science Journal Classification (ASJC) codes
- Condensed Matter Physics
- Electrical and Electronic Engineering