Effect of oxygen pressure on electrical properties of BiFe 0.9Co0.1O3 thin films prepared by pulsed laser deposition

Hajime Hojo, Ko Onuma, Yuichi Ikuhara, Masaki Azuma

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

The crystal structures and electrical properties of epitaxial BiFe 0.9Co0.1O3 thin films grown by pulsed laser deposition on SrRuO3/SrTiO3(001) substrates under different oxygen pressures were investigated. The unit cell volume of BiFe 0.9Co0.1O3 thin films monotonically decreases with increasing oxygen pressure from 10 to 17 Pa, while the leakage current is minimum at 15 Pa. Oxygen content variation in the BiFe0.9Co 0.1O3 thin films is proposed to explain the obtained experimental results. The BiFe0.9Co0.1O3 thin film deposited at 15 Pa shows ferroelectric switching behavior with inversion current at room temperature.

Original languageEnglish
Article number09KD09
JournalJapanese journal of applied physics
Volume52
Issue number9 PART2
DOIs
Publication statusPublished - Sep 1 2013
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

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