Effect of Precursor Solution Aging on the Thermoelectric Performance of CsSnI3 Thin Film

Ajay Kumar Baranwal, Shrikant Saini, Zhen Wang, Kengo Hamada, Daisuke Hirotani, Kohei Nishimura, Muhammad Akmal Kamarudin, Gaurav Kapil, Tomohide Yabuki, Satoshi Iikubo, Qing Shen, Koji Miyazaki, Shuzi Hayase

Research output: Contribution to journalArticlepeer-review

1 Citation (Scopus)

Abstract

Inorganic CsSnI3 based perovskite crystals are interesting thermoelectric materials, owing to their unusual electronic properties. Here we report the thermoelectric power performance of a solution-coated CsSnI3 thin film from the viewpoint of carrier concentration optimizations. It was found that the carrier concentration can be changed by altering the aging time of the precursor solution. X-ray photoelectron spectroscopy analysis showed that the concentration of metallic Sn4+ increased as the solution aging time increased. This made possible to explore the relationship between carrier concentration and thermoelectric power factor. After controlling Sn4+ concentrations, we report a power factor of 145.10 μW m−1 K−2 , along with electrical conductivity 106 S/cm and Seebeck coefficient of 117 μV/K, measured at room temperature.

Original languageEnglish
Pages (from-to)2698-2703
Number of pages6
JournalJournal of Electronic Materials
Volume49
Issue number5
DOIs
Publication statusPublished - May 1 2020
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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