Effect of pressure on first-order valence transition of Yb 1-xyxInCu4

Wei Zhang, Kazuyoshi Yoshimura, Akihiro Mitsuda, Tsuneaki Goto

Research output: Contribution to journalArticle

Abstract

YbInCu4 exhibits a first-order valence transition at H v ≈ 33 T with 0.45% decrease of volume as increasing the magnetic field. The inherent chemical pressure in Yb1-xYxInCu 4 system is discussed as negative on valence transition of YbInCu4. The external pressure effect on Hv of Yb 1-xYxInCu4 is measured as dHv/dP ≈ - 1 T kbar-1.

Original languageEnglish
Pages (from-to)603-604
Number of pages2
JournalPhysica B: Condensed Matter
Volume329-333
Issue numberII
DOIs
Publication statusPublished - Jan 1 2003
Externally publishedYes

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Pressure effects
Magnetic fields
valence
pressure effects
magnetic fields

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Cite this

Effect of pressure on first-order valence transition of Yb 1-xyxInCu4. / Zhang, Wei; Yoshimura, Kazuyoshi; Mitsuda, Akihiro; Goto, Tsuneaki.

In: Physica B: Condensed Matter, Vol. 329-333, No. II, 01.01.2003, p. 603-604.

Research output: Contribution to journalArticle

Zhang, Wei ; Yoshimura, Kazuyoshi ; Mitsuda, Akihiro ; Goto, Tsuneaki. / Effect of pressure on first-order valence transition of Yb 1-xyxInCu4. In: Physica B: Condensed Matter. 2003 ; Vol. 329-333, No. II. pp. 603-604.
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