TY - JOUR
T1 - Effect of pressure on the electrical resistivity of UCu5In single crystals
AU - Kaczorowski, D.
AU - Troć, R.
AU - Kagayama, T.
AU - Honda, F.
AU - Oómi, G.
N1 - Funding Information:
The authors are grateful to Prof. Takemi Komatsubara for his valuable advises concerning single crystal growth technique. The work was supported by the State Committee for Scientific Research (KBN) within Grant No. 2P03B 150 17. DK and RT are indebted to the Japan Society for the Promotion of Science for research fellowships.
PY - 2002/6
Y1 - 2002/6
N2 - The electrical resistivity of the antiferromagnetic dense Kondo compound UCu5In has been studied on single-crystalline specimens under hydrostatic pressure up to 2.2GPa. Upon applying pressure, ρa(T) hardly alters but the other two resistivity components, i.e. ρb(T) and ρc(T), show some change in their magnitudes, in both the ordered and paramagnetic regions. The Neél temperature TN=25K is almost independent of pressure, which indicates that the magnetic moments in UCu5In are rather well localized.
AB - The electrical resistivity of the antiferromagnetic dense Kondo compound UCu5In has been studied on single-crystalline specimens under hydrostatic pressure up to 2.2GPa. Upon applying pressure, ρa(T) hardly alters but the other two resistivity components, i.e. ρb(T) and ρc(T), show some change in their magnitudes, in both the ordered and paramagnetic regions. The Neél temperature TN=25K is almost independent of pressure, which indicates that the magnetic moments in UCu5In are rather well localized.
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U2 - 10.1016/S0038-1098(02)00185-0
DO - 10.1016/S0038-1098(02)00185-0
M3 - Article
AN - SCOPUS:0036624494
SN - 0038-1098
VL - 122
SP - 527
EP - 529
JO - Solid State Communications
JF - Solid State Communications
IS - 10
ER -