Effect of radiation in solid during SiC sublimation growth

Shin Ichi Nishizawa, Shin Ichi Nakashima, Tomohisa Kato

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

The effect of infrared absorption on SiC sublimation growth was numerically investigated. At first, absorption coefficient was estimated as function of doping concentration. Then temperature distribution inside a crucible was numerically analyzed with taking account of absorption in growing crystal. It was pointed out that temperature distribution in a growing crystal strongly depends on absorption coefficient, i.e. doping concentration. As increasing the absorption coefficient, the growth front temperature and temperature gradient inside a growing crystal increase. It might cause large thermal stress and affect the grown crystal quality. This agrees well with growth features in experiment. The growth condition should be determined with taking account of absorption coefficient, i.e. doping concentration.

Original languageEnglish
Title of host publicationSilicon Carbide 2006 - Materials, Processing and Devices
Pages29-34
Number of pages6
Publication statusPublished - Nov 1 2006
Externally publishedYes
Event2006 MRS Spring Meeting - San Francisco, CA, United States
Duration: Apr 18 2006Apr 20 2006

Publication series

NameMaterials Research Society Symposium Proceedings
Volume911
ISSN (Print)0272-9172

Other

Other2006 MRS Spring Meeting
CountryUnited States
CitySan Francisco, CA
Period4/18/064/20/06

Fingerprint

Sublimation
Crystal growth
Radiation
Doping (additives)
Temperature distribution
Crucibles
Infrared absorption
Thermal stress
Thermal gradients
Crystals
Experiments
Temperature

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Nishizawa, S. I., Nakashima, S. I., & Kato, T. (2006). Effect of radiation in solid during SiC sublimation growth. In Silicon Carbide 2006 - Materials, Processing and Devices (pp. 29-34). (Materials Research Society Symposium Proceedings; Vol. 911).

Effect of radiation in solid during SiC sublimation growth. / Nishizawa, Shin Ichi; Nakashima, Shin Ichi; Kato, Tomohisa.

Silicon Carbide 2006 - Materials, Processing and Devices. 2006. p. 29-34 (Materials Research Society Symposium Proceedings; Vol. 911).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Nishizawa, SI, Nakashima, SI & Kato, T 2006, Effect of radiation in solid during SiC sublimation growth. in Silicon Carbide 2006 - Materials, Processing and Devices. Materials Research Society Symposium Proceedings, vol. 911, pp. 29-34, 2006 MRS Spring Meeting, San Francisco, CA, United States, 4/18/06.
Nishizawa SI, Nakashima SI, Kato T. Effect of radiation in solid during SiC sublimation growth. In Silicon Carbide 2006 - Materials, Processing and Devices. 2006. p. 29-34. (Materials Research Society Symposium Proceedings).
Nishizawa, Shin Ichi ; Nakashima, Shin Ichi ; Kato, Tomohisa. / Effect of radiation in solid during SiC sublimation growth. Silicon Carbide 2006 - Materials, Processing and Devices. 2006. pp. 29-34 (Materials Research Society Symposium Proceedings).
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