Effect of Si3N4 coating on strain and fracture of Si ingots

Karolin Jiptner, Hirofumi Harada, Yoshiji Miyamura, Masayuki Fukuzawa, Takashi Sekiguchi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

This study is concerned with the effect of reduced Si3N4 coating during Si growth carried out by the directional solidification cast method. Three crystals were grown and compared in terms of cracking behavior and strain distribution. It was found, that the outer areas of the grown Si ingots exhibit much higher strain than the center pieces and this corresponds with the appearance of cracks in higher density in the outer edges of the crystals. It was also found that cracks mainly propagated in vertical direction and less in horizontal direction due to the temperature gradient during growth.

Original languageEnglish
Title of host publicationDefects-Recognition, Imaging and Physics in Semiconductors XIV
PublisherTrans Tech Publications Ltd
Pages247-250
Number of pages4
ISBN (Print)9783037854426
DOIs
Publication statusPublished - 2012
Externally publishedYes
Event14th International Conference on Defects-Recognition, Imaging and Physics in Semiconductors, DRIP-14 - Miyazaki, Japan
Duration: Sep 25 2011Sep 29 2011

Publication series

NameMaterials Science Forum
Volume725
ISSN (Print)0255-5476
ISSN (Electronic)1662-9752

Other

Other14th International Conference on Defects-Recognition, Imaging and Physics in Semiconductors, DRIP-14
Country/TerritoryJapan
CityMiyazaki
Period9/25/119/29/11

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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