Effect of Sn-doped Ge insertion layers on epitaxial growth of ferromagnetic Fe3Si films on a flexible substrate

Hidenori Higashi, Yuichi Fujita, Makoto Kawano, Junya Hirayama, Shinya Yamada, Jong Hyeok Park, Taizoh Sadoh, Masanobu Miyao, Kohei Hamaya

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

By an insertion of a Ge(Sn) layer and its CMP treatments, we have improved the crystalline and magnetic characteristics of one of the Heusler-compounds, Fe3Si, on (111)-oriented Ge on a flexible substrate. This work is a first step of high-performance flexible spintronics for flexible system-in-display devices.

Original languageEnglish
Title of host publication2014 7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014
PublisherIEEE Computer Society
Pages59-60
Number of pages2
ISBN (Print)9781479954285
DOIs
Publication statusPublished - Jan 1 2014
Event7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014 - Singapore, Singapore
Duration: Jun 2 2014Jun 4 2014

Publication series

Name2014 7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014

Other

Other7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014
CountrySingapore
CitySingapore
Period6/2/146/4/14

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All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

Cite this

Higashi, H., Fujita, Y., Kawano, M., Hirayama, J., Yamada, S., Park, J. H., ... Hamaya, K. (2014). Effect of Sn-doped Ge insertion layers on epitaxial growth of ferromagnetic Fe3Si films on a flexible substrate. In 2014 7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014 (pp. 59-60). [6874683] (2014 7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014). IEEE Computer Society. https://doi.org/10.1109/ISTDM.2014.6874683