TY - JOUR
T1 - Effect of Sr doping on LaTiO 3 thin films
AU - Vilquin, B.
AU - Kanki, T.
AU - Yanagida, T.
AU - Tanaka, H.
AU - Kawai, T.
N1 - Funding Information:
The authors would like to thank the Ministry of Education, Culture, Sports, Science and Technology of Japan for funding and supporting this project thought the Center of Excellence (COE) program. B. Vilquin, T. Kanki and T. Yanagida acknowledge the financial support from Japan Society for the Promotion of Science (JSPS).
PY - 2005/5/15
Y1 - 2005/5/15
N2 - We report on the electric properties of La 1-x Sr x TiO 3 (0 ≤ x ≤ 0.5) thin films fabricated by pulsed laser deposition method. Crystallographic measurement of the thin films showed the epitaxial c-axis perovskite structure. The electric property of LaTiO 3 thin film, which is a typical Mott insulative material in bulk, showed insulative behaviour, while the Sr-doped films showed metallic conduction suffering electron-electron scattering. Below x = 0.1, the major carrier type was identified to be hole, and switched to electron with further increasing Sr-doping above x = 0.15. In fact, the switching from p-type to n-type for La 1-x Sr x TiO 3 thin films is first demonstrated in this study. The transition suggests that effective Coulomb gap vanishes due to over-additional Sr doping.
AB - We report on the electric properties of La 1-x Sr x TiO 3 (0 ≤ x ≤ 0.5) thin films fabricated by pulsed laser deposition method. Crystallographic measurement of the thin films showed the epitaxial c-axis perovskite structure. The electric property of LaTiO 3 thin film, which is a typical Mott insulative material in bulk, showed insulative behaviour, while the Sr-doped films showed metallic conduction suffering electron-electron scattering. Below x = 0.1, the major carrier type was identified to be hole, and switched to electron with further increasing Sr-doping above x = 0.15. In fact, the switching from p-type to n-type for La 1-x Sr x TiO 3 thin films is first demonstrated in this study. The transition suggests that effective Coulomb gap vanishes due to over-additional Sr doping.
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U2 - 10.1016/j.apsusc.2004.10.107
DO - 10.1016/j.apsusc.2004.10.107
M3 - Conference article
AN - SCOPUS:15844417250
VL - 244
SP - 494
EP - 497
JO - Applied Surface Science
JF - Applied Surface Science
SN - 0169-4332
IS - 1-4
T2 - 12th International Conference on Solid Films and Surfaces
Y2 - 21 June 2004 through 25 June 2004
ER -