Effect of Sr doping on LaTiO                         3                          thin films

B. Vilquin; T. Kanki; T. Yanagida; H. Tanaka; T. Kawai

doi:10.1016/j.apsusc.2004.10.107

Effect of Sr doping on LaTiO ₃ thin films

B. Vilquin, T. Kanki, T. Yanagida, H. Tanaka, T. Kawai

Research output: Contribution to journal › Conference article

11 Citations (Scopus)

Abstract

We report on the electric properties of La _1-x Sr _x TiO ₃ (0 ≤ x ≤ 0.5) thin films fabricated by pulsed laser deposition method. Crystallographic measurement of the thin films showed the epitaxial c-axis perovskite structure. The electric property of LaTiO ₃ thin film, which is a typical Mott insulative material in bulk, showed insulative behaviour, while the Sr-doped films showed metallic conduction suffering electron-electron scattering. Below x = 0.1, the major carrier type was identified to be hole, and switched to electron with further increasing Sr-doping above x = 0.15. In fact, the switching from p-type to n-type for La _1-x Sr _x TiO ₃ thin films is first demonstrated in this study. The transition suggests that effective Coulomb gap vanishes due to over-additional Sr doping.

Original language	English
Pages (from-to)	494-497
Number of pages	4
Journal	Applied Surface Science
Volume	244
Issue number	1-4
DOIs	https://doi.org/10.1016/j.apsusc.2004.10.107
Publication status	Published - May 15 2005
Externally published	Yes
Event	12th International Conference on Solid Films and Surfaces - Hammatsu, Japan Duration: Jun 21 2004 → Jun 25 2004

Fingerprint

All Science Journal Classification (ASJC) codes

Chemistry(all)
Condensed Matter Physics
Physics and Astronomy(all)
Surfaces and Interfaces
Surfaces, Coatings and Films

Cite this

Vilquin, B., Kanki, T., Yanagida, T., Tanaka, H., & Kawai, T. (2005). Effect of Sr doping on LaTiO ₃ thin films Applied Surface Science, 244(1-4), 494-497. https://doi.org/10.1016/j.apsusc.2004.10.107

@article{43f54efd40e247b5beba919f7a6418e1,

title = "Effect of Sr doping on LaTiO 3 thin films",

abstract = "We report on the electric properties of La 1-x Sr x TiO 3 (0 ≤ x ≤ 0.5) thin films fabricated by pulsed laser deposition method. Crystallographic measurement of the thin films showed the epitaxial c-axis perovskite structure. The electric property of LaTiO 3 thin film, which is a typical Mott insulative material in bulk, showed insulative behaviour, while the Sr-doped films showed metallic conduction suffering electron-electron scattering. Below x = 0.1, the major carrier type was identified to be hole, and switched to electron with further increasing Sr-doping above x = 0.15. In fact, the switching from p-type to n-type for La 1-x Sr x TiO 3 thin films is first demonstrated in this study. The transition suggests that effective Coulomb gap vanishes due to over-additional Sr doping.",

author = "B. Vilquin and T. Kanki and T. Yanagida and H. Tanaka and T. Kawai",

year = "2005",

month = "5",

day = "15",

doi = "10.1016/j.apsusc.2004.10.107",

language = "English",

volume = "244",

pages = "494--497",

journal = "Applied Surface Science",

issn = "0169-4332",

publisher = "Elsevier",

number = "1-4",

}

TY - JOUR

T1 - Effect of Sr doping on LaTiO 3 thin films

AU - Vilquin, B.

AU - Kanki, T.

AU - Yanagida, T.

AU - Tanaka, H.

AU - Kawai, T.

PY - 2005/5/15

Y1 - 2005/5/15

N2 - We report on the electric properties of La 1-x Sr x TiO 3 (0 ≤ x ≤ 0.5) thin films fabricated by pulsed laser deposition method. Crystallographic measurement of the thin films showed the epitaxial c-axis perovskite structure. The electric property of LaTiO 3 thin film, which is a typical Mott insulative material in bulk, showed insulative behaviour, while the Sr-doped films showed metallic conduction suffering electron-electron scattering. Below x = 0.1, the major carrier type was identified to be hole, and switched to electron with further increasing Sr-doping above x = 0.15. In fact, the switching from p-type to n-type for La 1-x Sr x TiO 3 thin films is first demonstrated in this study. The transition suggests that effective Coulomb gap vanishes due to over-additional Sr doping.

AB - We report on the electric properties of La 1-x Sr x TiO 3 (0 ≤ x ≤ 0.5) thin films fabricated by pulsed laser deposition method. Crystallographic measurement of the thin films showed the epitaxial c-axis perovskite structure. The electric property of LaTiO 3 thin film, which is a typical Mott insulative material in bulk, showed insulative behaviour, while the Sr-doped films showed metallic conduction suffering electron-electron scattering. Below x = 0.1, the major carrier type was identified to be hole, and switched to electron with further increasing Sr-doping above x = 0.15. In fact, the switching from p-type to n-type for La 1-x Sr x TiO 3 thin films is first demonstrated in this study. The transition suggests that effective Coulomb gap vanishes due to over-additional Sr doping.

UR - http://www.scopus.com/inward/record.url?scp=15844417250&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=15844417250&partnerID=8YFLogxK

U2 - 10.1016/j.apsusc.2004.10.107

DO - 10.1016/j.apsusc.2004.10.107

M3 - Conference article

AN - SCOPUS:15844417250

VL - 244

SP - 494

EP - 497

JO - Applied Surface Science

JF - Applied Surface Science

SN - 0169-4332

IS - 1-4

ER -

Access to Document

10.1016/j.apsusc.2004.10.107