Effect of stress on activation during the formation of np junction in co-implanted germanium

Nur Nadhirah Rashid, Umar Abdul Aziz, Siti Rahmah Aid, Suwa Akira, Hiroshi Ikenoue, Fang Xie, Anthony Centeno

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Higher carrier mobility in germanium has made germanium as a favorable candidate to replace silicon as a device substrate for a high-performance device. Further optimization on fabrication process parameters in germanium involving ion-implantation and thermal annealing is important to form a highly activated np junction. Co-implantation technique has prompted interest due to its reported stress-induced activation; which may be due to the implementation of two atoms different in size. Combining with ultra-fast/high temperature of laser thermal annealing may promotes the improvement in activation and damage removal. This works focused on introducing stress to the germanium substrate through co-implantation of dopant ions, follows by laser thermal annealing to activate and remove the implanted damages. It is found that Raman shift of the annealed co-implanted sample can be observed with 0.2% increase in the strain value, when comparing to the single implanted sample. 12% improvement of sheet resistance can also be observed, which may be related due to the increase in stress.

Original languageEnglish
Title of host publication2018 18th International Workshop on Junction Technology, IWJT 2018
EditorsGuo-Ping Ru, Bing-Zong Li, Yu-Long Jiang, Xin-Ping Qu
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages1-3
Number of pages3
ISBN (Electronic)9781538645116
DOIs
Publication statusPublished - Apr 2 2018
Event18th International Workshop on Junction Technology, IWJT 2018 - Shanghai, China
Duration: Mar 8 2018Mar 9 2018

Publication series

Name2018 18th International Workshop on Junction Technology, IWJT 2018
Volume2018-January

Other

Other18th International Workshop on Junction Technology, IWJT 2018
CountryChina
CityShanghai
Period3/8/183/9/18

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics

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