Effect of substrate bias on Si epitaxial growth using sputtering-type electron cyclotron resonance (ECR) plasma

Junsi Gao, Hiroshi Nakashima, Junli Wang, Kanako Iwanaga, Dawei Gao, Katsuhiko Furukawa, Katsunori Muraoka

    Research output: Contribution to journalArticle

    5 Citations (Scopus)

    Abstract

    Control of the energy of ions hitting the substrate during in situ cleaning and deposition was found to be very important for deposition of epitaxial Si thin film. This was studied by applying a substrate bias in the range of -30 to +30 V in a sputtering-type electron cyclotron resonance (ECR) plasma system. During in situ, cleaning, positive bias voltage reduced the ion bombardment energy, and resulted in epitaxial deposition of Si crystal film even at a low gas pressure of 0.8 mTorr, at which epitaxial deposition was not possible previously. During deposition, obvious improvements in the crystallinity of the epitaxial Si film were achieved when the ion energy was reduced by applying a positive bias. On the other hand, application of a negative bias for the deposition process resulted in amorphous film even when deposition was performed at the high gas pressure of 1.7 mTorr, at which epitaxial deposition was possible previously.

    Original languageEnglish
    Pages (from-to)L1293-L1295
    JournalJapanese Journal of Applied Physics, Part 2: Letters
    Volume38
    Issue number11 B
    Publication statusPublished - Nov 15 1999

    Fingerprint

    Electron cyclotron resonance
    electron cyclotron resonance
    Epitaxial growth
    Sputtering
    sputtering
    Plasmas
    Substrates
    cleaning
    gas pressure
    Cleaning
    ions
    Ions
    Amorphous films
    Ion bombardment
    Bias voltage
    Gases
    energy
    bombardment
    crystallinity
    low pressure

    All Science Journal Classification (ASJC) codes

    • Engineering(all)
    • Physics and Astronomy (miscellaneous)
    • Physics and Astronomy(all)

    Cite this

    Effect of substrate bias on Si epitaxial growth using sputtering-type electron cyclotron resonance (ECR) plasma. / Gao, Junsi; Nakashima, Hiroshi; Wang, Junli; Iwanaga, Kanako; Gao, Dawei; Furukawa, Katsuhiko; Muraoka, Katsunori.

    In: Japanese Journal of Applied Physics, Part 2: Letters, Vol. 38, No. 11 B, 15.11.1999, p. L1293-L1295.

    Research output: Contribution to journalArticle

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    AU - Nakashima, Hiroshi

    AU - Wang, Junli

    AU - Iwanaga, Kanako

    AU - Gao, Dawei

    AU - Furukawa, Katsuhiko

    AU - Muraoka, Katsunori

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