Effect of the CeO2 buffer layer thickness on the microwave properties of YBCO thin films

Katherine D. Develos, Masanobu Kusunoki, Masashi Mukaida, Shigetoshi Ohshima

Research output: Contribution to journalConference article

7 Citations (Scopus)

Abstract

We have examined the effect of varying the CeO2 buffer layer thickness on the microwave surface resistance Rs and surface morphology of YBCO films deposited by pulsed laser deposition. Above the critical thickness value dc of CeO2 at approx. 90 nm, the surface roughness and areal density of outgrowths of the film increased significantly. The YBCO films grown on CeO2 with thickness less than dc were completely c-axis oriented and had lower c-axis lengths than those grown on CeO2 with thickness greater than dc. Rs measured via the sapphire dielectric resonator technique was significantly lower for the YBCO film grown on CeO2 with thickness less than dc. The increase in the Rs value when the buffer layer thickness is greater than dc is considered to be due to the increased surface outgrowths and presence of a-axis domains in the YBCO film. Changes in the microstructure and orientation of the YBCO films were found to be strongly influenced by the underlying CeO2 layer.

Original languageEnglish
Pages (from-to)887-889
Number of pages3
JournalSuperconductor Science and Technology
Volume12
Issue number11
DOIs
Publication statusPublished - Nov 1 1999
Externally publishedYes
EventProceedings of the 1999 International Superconductive Electronics Conference - Berkeley, CA, USA
Duration: Jun 21 1999Jun 25 1999

All Science Journal Classification (ASJC) codes

  • Ceramics and Composites
  • Condensed Matter Physics
  • Metals and Alloys
  • Electrical and Electronic Engineering
  • Materials Chemistry

Fingerprint Dive into the research topics of 'Effect of the CeO<sub>2</sub> buffer layer thickness on the microwave properties of YBCO thin films'. Together they form a unique fingerprint.

  • Cite this