Effect of the CeO2 buffer layer thickness on the microwave properties of YBCO thin films

Katherine D. Develos; Masanobu Kusunoki; Masashi Mukaida; Shigetoshi Ohshima

doi:10.1088/0953-2048/12/11/358

Effect of the CeO₂ buffer layer thickness on the microwave properties of YBCO thin films

Katherine D. Develos, Masanobu Kusunoki, Masashi Mukaida, Shigetoshi Ohshima

Research output: Contribution to journal › Conference article › peer-review

7 Citations (Scopus)

Abstract

We have examined the effect of varying the CeO₂ buffer layer thickness on the microwave surface resistance R_s and surface morphology of YBCO films deposited by pulsed laser deposition. Above the critical thickness value d_c of CeO₂ at approx. 90 nm, the surface roughness and areal density of outgrowths of the film increased significantly. The YBCO films grown on CeO₂ with thickness less than d_c were completely c-axis oriented and had lower c-axis lengths than those grown on CeO₂ with thickness greater than d_c. R_s measured via the sapphire dielectric resonator technique was significantly lower for the YBCO film grown on CeO₂ with thickness less than d_c. The increase in the R_s value when the buffer layer thickness is greater than d_c is considered to be due to the increased surface outgrowths and presence of a-axis domains in the YBCO film. Changes in the microstructure and orientation of the YBCO films were found to be strongly influenced by the underlying CeO₂ layer.

Original language	English
Pages (from-to)	887-889
Number of pages	3
Journal	Superconductor Science and Technology
Volume	12
Issue number	11
DOIs	https://doi.org/10.1088/0953-2048/12/11/358
Publication status	Published - Nov 1 1999
Externally published	Yes
Event	Proceedings of the 1999 International Superconductive Electronics Conference - Berkeley, CA, USA Duration: Jun 21 1999 → Jun 25 1999

All Science Journal Classification (ASJC) codes

Ceramics and Composites
Condensed Matter Physics
Metals and Alloys
Electrical and Electronic Engineering
Materials Chemistry

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10.1088/0953-2048/12/11/358

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title = "Effect of the CeO2 buffer layer thickness on the microwave properties of YBCO thin films",

abstract = "We have examined the effect of varying the CeO2 buffer layer thickness on the microwave surface resistance Rs and surface morphology of YBCO films deposited by pulsed laser deposition. Above the critical thickness value dc of CeO2 at approx. 90 nm, the surface roughness and areal density of outgrowths of the film increased significantly. The YBCO films grown on CeO2 with thickness less than dc were completely c-axis oriented and had lower c-axis lengths than those grown on CeO2 with thickness greater than dc. Rs measured via the sapphire dielectric resonator technique was significantly lower for the YBCO film grown on CeO2 with thickness less than dc. The increase in the Rs value when the buffer layer thickness is greater than dc is considered to be due to the increased surface outgrowths and presence of a-axis domains in the YBCO film. Changes in the microstructure and orientation of the YBCO films were found to be strongly influenced by the underlying CeO2 layer.",

author = "Develos, {Katherine D.} and Masanobu Kusunoki and Masashi Mukaida and Shigetoshi Ohshima",

year = "1999",

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T1 - Effect of the CeO2 buffer layer thickness on the microwave properties of YBCO thin films

AU - Develos, Katherine D.

AU - Kusunoki, Masanobu

AU - Mukaida, Masashi

AU - Ohshima, Shigetoshi

PY - 1999/11/1

Y1 - 1999/11/1

N2 - We have examined the effect of varying the CeO2 buffer layer thickness on the microwave surface resistance Rs and surface morphology of YBCO films deposited by pulsed laser deposition. Above the critical thickness value dc of CeO2 at approx. 90 nm, the surface roughness and areal density of outgrowths of the film increased significantly. The YBCO films grown on CeO2 with thickness less than dc were completely c-axis oriented and had lower c-axis lengths than those grown on CeO2 with thickness greater than dc. Rs measured via the sapphire dielectric resonator technique was significantly lower for the YBCO film grown on CeO2 with thickness less than dc. The increase in the Rs value when the buffer layer thickness is greater than dc is considered to be due to the increased surface outgrowths and presence of a-axis domains in the YBCO film. Changes in the microstructure and orientation of the YBCO films were found to be strongly influenced by the underlying CeO2 layer.

AB - We have examined the effect of varying the CeO2 buffer layer thickness on the microwave surface resistance Rs and surface morphology of YBCO films deposited by pulsed laser deposition. Above the critical thickness value dc of CeO2 at approx. 90 nm, the surface roughness and areal density of outgrowths of the film increased significantly. The YBCO films grown on CeO2 with thickness less than dc were completely c-axis oriented and had lower c-axis lengths than those grown on CeO2 with thickness greater than dc. Rs measured via the sapphire dielectric resonator technique was significantly lower for the YBCO film grown on CeO2 with thickness less than dc. The increase in the Rs value when the buffer layer thickness is greater than dc is considered to be due to the increased surface outgrowths and presence of a-axis domains in the YBCO film. Changes in the microstructure and orientation of the YBCO films were found to be strongly influenced by the underlying CeO2 layer.

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Y2 - 21 June 1999 through 25 June 1999

ER -

Effect of the CeO₂ buffer layer thickness on the microwave properties of YBCO thin films

Abstract

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