Abstract
The current-voltage (I-V) characteristic of Au/PI/(Rh-G2 + PI)/PI/Au (or Al) junctions was examined. An asymmetrical I-V characteristic with several steps was observed for Au/PI/PI:Rh-G2/PI/Al junctions, whereas a symmetric I-V characteristic with steps was obtained for Au/PI/PI:Rh-G2/PI/Au junctions. It was concluded that the presence of metal/organic interfacial states made a significant contribution to the I-V characteristics of these junctions.
| Original language | English |
|---|---|
| Pages (from-to) | 379-382 |
| Number of pages | 4 |
| Journal | Thin Solid Films |
| Volume | 393 |
| Issue number | 1-2 |
| DOIs | |
| Publication status | Published - Aug 1 2001 |
| Externally published | Yes |
| Event | 4th International Conference on Nano-Molecular Electronics - Kobe, Japan Duration: Dec 5 2000 → Dec 7 2000 |
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All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Surfaces and Interfaces
- Surfaces, Coatings and Films
- Metals and Alloys
- Materials Chemistry
Cite this
Effect of the metal/organic interface phenomena on the current-voltage characteristics of organic single electron tunneling device. / Kubota, Tohru; Yokoyama, Shiyoshi; Nakahama, Tatsuo; Mashiko, Shinro; Noguchi, Yutaka; Majima, Yutaka; Iwamoto, Mitsumasa.
In: Thin Solid Films, Vol. 393, No. 1-2, 01.08.2001, p. 379-382.Research output: Contribution to journal › Conference article
}
TY - JOUR
T1 - Effect of the metal/organic interface phenomena on the current-voltage characteristics of organic single electron tunneling device
AU - Kubota, Tohru
AU - Yokoyama, Shiyoshi
AU - Nakahama, Tatsuo
AU - Mashiko, Shinro
AU - Noguchi, Yutaka
AU - Majima, Yutaka
AU - Iwamoto, Mitsumasa
PY - 2001/8/1
Y1 - 2001/8/1
N2 - The current-voltage (I-V) characteristic of Au/PI/(Rh-G2 + PI)/PI/Au (or Al) junctions was examined. An asymmetrical I-V characteristic with several steps was observed for Au/PI/PI:Rh-G2/PI/Al junctions, whereas a symmetric I-V characteristic with steps was obtained for Au/PI/PI:Rh-G2/PI/Au junctions. It was concluded that the presence of metal/organic interfacial states made a significant contribution to the I-V characteristics of these junctions.
AB - The current-voltage (I-V) characteristic of Au/PI/(Rh-G2 + PI)/PI/Au (or Al) junctions was examined. An asymmetrical I-V characteristic with several steps was observed for Au/PI/PI:Rh-G2/PI/Al junctions, whereas a symmetric I-V characteristic with steps was obtained for Au/PI/PI:Rh-G2/PI/Au junctions. It was concluded that the presence of metal/organic interfacial states made a significant contribution to the I-V characteristics of these junctions.
UR - http://www.scopus.com/inward/record.url?scp=0035421751&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0035421751&partnerID=8YFLogxK
U2 - 10.1016/S0040-6090(01)01123-3
DO - 10.1016/S0040-6090(01)01123-3
M3 - Conference article
AN - SCOPUS:0035421751
VL - 393
SP - 379
EP - 382
JO - Thin Solid Films
JF - Thin Solid Films
SN - 0040-6090
IS - 1-2
ER -