Abstract
The current-voltage (I-V) characteristic of Au/PI/(Rh-G2 + PI)/PI/Au (or Al) junctions was examined. An asymmetrical I-V characteristic with several steps was observed for Au/PI/PI:Rh-G2/PI/Al junctions, whereas a symmetric I-V characteristic with steps was obtained for Au/PI/PI:Rh-G2/PI/Au junctions. It was concluded that the presence of metal/organic interfacial states made a significant contribution to the I-V characteristics of these junctions.
Original language | English |
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Pages (from-to) | 379-382 |
Number of pages | 4 |
Journal | Thin Solid Films |
Volume | 393 |
Issue number | 1-2 |
DOIs | |
Publication status | Published - Aug 1 2001 |
Externally published | Yes |
Event | 4th International Conference on Nano-Molecular Electronics - Kobe, Japan Duration: Dec 5 2000 → Dec 7 2000 |
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Surfaces and Interfaces
- Surfaces, Coatings and Films
- Metals and Alloys
- Materials Chemistry