Effect of the metal/organic interface phenomena on the current-voltage characteristics of organic single electron tunneling device

Tohru Kubota, Shiyoshi Yokoyama, Tatsuo Nakahama, Shinro Mashiko, Yutaka Noguchi, Yutaka Majima, Mitsumasa Iwamoto

Research output: Contribution to journalConference article

13 Citations (Scopus)

Abstract

The current-voltage (I-V) characteristic of Au/PI/(Rh-G2 + PI)/PI/Au (or Al) junctions was examined. An asymmetrical I-V characteristic with several steps was observed for Au/PI/PI:Rh-G2/PI/Al junctions, whereas a symmetric I-V characteristic with steps was obtained for Au/PI/PI:Rh-G2/PI/Au junctions. It was concluded that the presence of metal/organic interfacial states made a significant contribution to the I-V characteristics of these junctions.

Original languageEnglish
Pages (from-to)379-382
Number of pages4
JournalThin Solid Films
Volume393
Issue number1-2
DOIs
Publication statusPublished - Aug 1 2001
Event4th International Conference on Nano-Molecular Electronics - Kobe, Japan
Duration: Dec 5 2000Dec 7 2000

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Electron tunneling
Current voltage characteristics
electron tunneling
Metals
Electric potential
electric potential
metals

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

Cite this

Effect of the metal/organic interface phenomena on the current-voltage characteristics of organic single electron tunneling device. / Kubota, Tohru; Yokoyama, Shiyoshi; Nakahama, Tatsuo; Mashiko, Shinro; Noguchi, Yutaka; Majima, Yutaka; Iwamoto, Mitsumasa.

In: Thin Solid Films, Vol. 393, No. 1-2, 01.08.2001, p. 379-382.

Research output: Contribution to journalConference article

Kubota, Tohru ; Yokoyama, Shiyoshi ; Nakahama, Tatsuo ; Mashiko, Shinro ; Noguchi, Yutaka ; Majima, Yutaka ; Iwamoto, Mitsumasa. / Effect of the metal/organic interface phenomena on the current-voltage characteristics of organic single electron tunneling device. In: Thin Solid Films. 2001 ; Vol. 393, No. 1-2. pp. 379-382.
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AU - Majima, Yutaka

AU - Iwamoto, Mitsumasa

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AB - The current-voltage (I-V) characteristic of Au/PI/(Rh-G2 + PI)/PI/Au (or Al) junctions was examined. An asymmetrical I-V characteristic with several steps was observed for Au/PI/PI:Rh-G2/PI/Al junctions, whereas a symmetric I-V characteristic with steps was obtained for Au/PI/PI:Rh-G2/PI/Au junctions. It was concluded that the presence of metal/organic interfacial states made a significant contribution to the I-V characteristics of these junctions.

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