Effect of the metal/organic interface phenomena on the current-voltage characteristics of organic single electron tunneling device

Tohru Kubota; Shiyoshi Yokoyama; Tatsuo Nakahama; Shinro Mashiko; Yutaka Noguchi; Yutaka Majima; Mitsumasa Iwamoto

doi:10.1016/S0040-6090(01)01123-3

Effect of the metal/organic interface phenomena on the current-voltage characteristics of organic single electron tunneling device

Tohru Kubota, Shiyoshi Yokoyama, Tatsuo Nakahama, Shinro Mashiko, Yutaka Noguchi, Yutaka Majima, Mitsumasa Iwamoto

Research output: Contribution to journal › Conference article › peer-review

13 Citations (Scopus)

Abstract

The current-voltage (I-V) characteristic of Au/PI/(Rh-G2 + PI)/PI/Au (or Al) junctions was examined. An asymmetrical I-V characteristic with several steps was observed for Au/PI/PI:Rh-G2/PI/Al junctions, whereas a symmetric I-V characteristic with steps was obtained for Au/PI/PI:Rh-G2/PI/Au junctions. It was concluded that the presence of metal/organic interfacial states made a significant contribution to the I-V characteristics of these junctions.

Original language	English
Pages (from-to)	379-382
Number of pages	4
Journal	Thin Solid Films
Volume	393
Issue number	1-2
DOIs	https://doi.org/10.1016/S0040-6090(01)01123-3
Publication status	Published - Aug 1 2001
Externally published	Yes
Event	4th International Conference on Nano-Molecular Electronics - Kobe, Japan Duration: Dec 5 2000 → Dec 7 2000

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

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10.1016/S0040-6090(01)01123-3

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title = "Effect of the metal/organic interface phenomena on the current-voltage characteristics of organic single electron tunneling device",

abstract = "The current-voltage (I-V) characteristic of Au/PI/(Rh-G2 + PI)/PI/Au (or Al) junctions was examined. An asymmetrical I-V characteristic with several steps was observed for Au/PI/PI:Rh-G2/PI/Al junctions, whereas a symmetric I-V characteristic with steps was obtained for Au/PI/PI:Rh-G2/PI/Au junctions. It was concluded that the presence of metal/organic interfacial states made a significant contribution to the I-V characteristics of these junctions.",

author = "Tohru Kubota and Shiyoshi Yokoyama and Tatsuo Nakahama and Shinro Mashiko and Yutaka Noguchi and Yutaka Majima and Mitsumasa Iwamoto",

year = "2001",

month = aug,

day = "1",

doi = "10.1016/S0040-6090(01)01123-3",

language = "English",

volume = "393",

pages = "379--382",

journal = "Thin Solid Films",

issn = "0040-6090",

publisher = "Elsevier",

number = "1-2",

note = "4th International Conference on Nano-Molecular Electronics ; Conference date: 05-12-2000 Through 07-12-2000",

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TY - JOUR

T1 - Effect of the metal/organic interface phenomena on the current-voltage characteristics of organic single electron tunneling device

AU - Kubota, Tohru

AU - Yokoyama, Shiyoshi

AU - Nakahama, Tatsuo

AU - Mashiko, Shinro

AU - Noguchi, Yutaka

AU - Majima, Yutaka

AU - Iwamoto, Mitsumasa

PY - 2001/8/1

Y1 - 2001/8/1

N2 - The current-voltage (I-V) characteristic of Au/PI/(Rh-G2 + PI)/PI/Au (or Al) junctions was examined. An asymmetrical I-V characteristic with several steps was observed for Au/PI/PI:Rh-G2/PI/Al junctions, whereas a symmetric I-V characteristic with steps was obtained for Au/PI/PI:Rh-G2/PI/Au junctions. It was concluded that the presence of metal/organic interfacial states made a significant contribution to the I-V characteristics of these junctions.

AB - The current-voltage (I-V) characteristic of Au/PI/(Rh-G2 + PI)/PI/Au (or Al) junctions was examined. An asymmetrical I-V characteristic with several steps was observed for Au/PI/PI:Rh-G2/PI/Al junctions, whereas a symmetric I-V characteristic with steps was obtained for Au/PI/PI:Rh-G2/PI/Au junctions. It was concluded that the presence of metal/organic interfacial states made a significant contribution to the I-V characteristics of these junctions.

UR - http://www.scopus.com/inward/record.url?scp=0035421751&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0035421751&partnerID=8YFLogxK

U2 - 10.1016/S0040-6090(01)01123-3

DO - 10.1016/S0040-6090(01)01123-3

M3 - Conference article

AN - SCOPUS:0035421751

VL - 393

SP - 379

EP - 382

JO - Thin Solid Films

JF - Thin Solid Films

SN - 0040-6090

IS - 1-2

T2 - 4th International Conference on Nano-Molecular Electronics

Y2 - 5 December 2000 through 7 December 2000

ER -

Effect of the metal/organic interface phenomena on the current-voltage characteristics of organic single electron tunneling device

Abstract

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