Effect of the packing structure of silicon chunks on the melting process and carbon reduction in Czochralski silicon crystal growth

Xin Liu, Satoshi Nakano, Koichi Kakimoto

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

Carbon (C) contamination in Czochralski silicon (CZ-Si) crystal growth mainly originates from carbon monoxide (CO) generation on the graphite components, which reaches a maximum during the melting stage. Loading a crucible with poly-Si feedstock includes many technical details for optimization of the melting and growth processes. To investigate the effect of the packing structure of Si chunks on C accumulation in CZ-Si crystal growth, transient global simulations of heat and mass transport were performed for the melting process with different packing structures of poly-Si. The heat transport modeling took into account the effective thermal conductivity (ETC) of the Si feedstock, which is affected by the packing structure. The effect of the chunk size on the melting process and C accumulation were investigated by parametric studies of different packing structures. The heat transport and melting process in the crucible were affected by the ETC and the emissivity of the Si feedstock. It was found that smaller Si chunks packed in the upper part could speed up the melting process and smooth the power profile. Decreasing the duration of the melting process is favorable for reduction of C contamination in the Si feedstock. Parametric studies indicated that optimization of the melting process by the packing structure is possible and essential for C reduction in CZ-Si crystal growth.

Original languageEnglish
Pages (from-to)595-600
Number of pages6
JournalJournal of Crystal Growth
Volume468
DOIs
Publication statusPublished - Jun 15 2017

Fingerprint

Silicon
Crystallization
Crystal growth
crystal growth
Melting
Carbon
melting
carbon
silicon
Feedstocks
Crucibles
crucibles
heat
Thermal conductivity
contamination
Contamination
thermal conductivity
optimization
Graphite
Carbon Monoxide

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

Cite this

Effect of the packing structure of silicon chunks on the melting process and carbon reduction in Czochralski silicon crystal growth. / Liu, Xin; Nakano, Satoshi; Kakimoto, Koichi.

In: Journal of Crystal Growth, Vol. 468, 15.06.2017, p. 595-600.

Research output: Contribution to journalArticle

@article{00c4a822901f4dc891e46eef24baaaec,
title = "Effect of the packing structure of silicon chunks on the melting process and carbon reduction in Czochralski silicon crystal growth",
abstract = "Carbon (C) contamination in Czochralski silicon (CZ-Si) crystal growth mainly originates from carbon monoxide (CO) generation on the graphite components, which reaches a maximum during the melting stage. Loading a crucible with poly-Si feedstock includes many technical details for optimization of the melting and growth processes. To investigate the effect of the packing structure of Si chunks on C accumulation in CZ-Si crystal growth, transient global simulations of heat and mass transport were performed for the melting process with different packing structures of poly-Si. The heat transport modeling took into account the effective thermal conductivity (ETC) of the Si feedstock, which is affected by the packing structure. The effect of the chunk size on the melting process and C accumulation were investigated by parametric studies of different packing structures. The heat transport and melting process in the crucible were affected by the ETC and the emissivity of the Si feedstock. It was found that smaller Si chunks packed in the upper part could speed up the melting process and smooth the power profile. Decreasing the duration of the melting process is favorable for reduction of C contamination in the Si feedstock. Parametric studies indicated that optimization of the melting process by the packing structure is possible and essential for C reduction in CZ-Si crystal growth.",
author = "Xin Liu and Satoshi Nakano and Koichi Kakimoto",
year = "2017",
month = "6",
day = "15",
doi = "10.1016/j.jcrysgro.2016.09.062",
language = "English",
volume = "468",
pages = "595--600",
journal = "Journal of Crystal Growth",
issn = "0022-0248",
publisher = "Elsevier",

}

TY - JOUR

T1 - Effect of the packing structure of silicon chunks on the melting process and carbon reduction in Czochralski silicon crystal growth

AU - Liu, Xin

AU - Nakano, Satoshi

AU - Kakimoto, Koichi

PY - 2017/6/15

Y1 - 2017/6/15

N2 - Carbon (C) contamination in Czochralski silicon (CZ-Si) crystal growth mainly originates from carbon monoxide (CO) generation on the graphite components, which reaches a maximum during the melting stage. Loading a crucible with poly-Si feedstock includes many technical details for optimization of the melting and growth processes. To investigate the effect of the packing structure of Si chunks on C accumulation in CZ-Si crystal growth, transient global simulations of heat and mass transport were performed for the melting process with different packing structures of poly-Si. The heat transport modeling took into account the effective thermal conductivity (ETC) of the Si feedstock, which is affected by the packing structure. The effect of the chunk size on the melting process and C accumulation were investigated by parametric studies of different packing structures. The heat transport and melting process in the crucible were affected by the ETC and the emissivity of the Si feedstock. It was found that smaller Si chunks packed in the upper part could speed up the melting process and smooth the power profile. Decreasing the duration of the melting process is favorable for reduction of C contamination in the Si feedstock. Parametric studies indicated that optimization of the melting process by the packing structure is possible and essential for C reduction in CZ-Si crystal growth.

AB - Carbon (C) contamination in Czochralski silicon (CZ-Si) crystal growth mainly originates from carbon monoxide (CO) generation on the graphite components, which reaches a maximum during the melting stage. Loading a crucible with poly-Si feedstock includes many technical details for optimization of the melting and growth processes. To investigate the effect of the packing structure of Si chunks on C accumulation in CZ-Si crystal growth, transient global simulations of heat and mass transport were performed for the melting process with different packing structures of poly-Si. The heat transport modeling took into account the effective thermal conductivity (ETC) of the Si feedstock, which is affected by the packing structure. The effect of the chunk size on the melting process and C accumulation were investigated by parametric studies of different packing structures. The heat transport and melting process in the crucible were affected by the ETC and the emissivity of the Si feedstock. It was found that smaller Si chunks packed in the upper part could speed up the melting process and smooth the power profile. Decreasing the duration of the melting process is favorable for reduction of C contamination in the Si feedstock. Parametric studies indicated that optimization of the melting process by the packing structure is possible and essential for C reduction in CZ-Si crystal growth.

UR - http://www.scopus.com/inward/record.url?scp=84995482274&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84995482274&partnerID=8YFLogxK

U2 - 10.1016/j.jcrysgro.2016.09.062

DO - 10.1016/j.jcrysgro.2016.09.062

M3 - Article

AN - SCOPUS:84995482274

VL - 468

SP - 595

EP - 600

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

SN - 0022-0248

ER -