Effect of the quantum size effect on the performance of solar cells with a silicon nanouwire array embedded in SiO2

Yasuyoshi Kurokawa; Shinya Kato; Yuya Watanabe; Akira Yamada; Makoto Konagai; Yoshimi Ohta; Yusuke Niwa; masaki Hirota

doi:10.1557/opl.2012.1154

Effect of the quantum size effect on the performance of solar cells with a silicon nanouwire array embedded in SiO₂

Yasuyoshi Kurokawa, Shinya Kato, Yuya Watanabe, Akira Yamada, Makoto Konagai, Yoshimi Ohta, Yusuke Niwa, masaki Hirota

Research output: Contribution to conference › Poster › peer-review

Abstract

The electrical characteristics of silicon nanowire (SiNW) solar cells with p-type hydrogenated amorphous silicon oxide (E_g=1.9 eV)/n-type SiNWs embedded in SiO₂/n-type hydrogenated amorphous silicon (E _g=1.7 eV) structure have been investigated using a two-dimensional device simulator with taking the quantum size effects into account. The average bandgap of a SiNW embedded in SiO₂ increased from 1.15 eV to 2.71 eV with decreasing the diameter from 10 nm to 1 nm due to the quantum size effect. It should be noted that under the sunlight with AM1.5G the open-circuit voltage (V_oc) of SiNW solar cells also increased to 1.54 V with decreasing the diameter of the SiNWs to 1 nm. This result suggests that it is possible to enhance the V_oc by the quantum size effect and a SiNW is a promising material for the all silicon tandem solar cells.

Original language	English
Pages	145-150
Number of pages	6
DOIs	https://doi.org/10.1557/opl.2012.1154
Publication status	Published - Dec 28 2012
Externally published	Yes
Event	2012 MRS Spring Meeting - San Francisco, CA, United States Duration: Apr 9 2012 → Apr 13 2012

Other

Other	2012 MRS Spring Meeting
Country	United States
City	San Francisco, CA
Period	4/9/12 → 4/13/12

All Science Journal Classification (ASJC) codes

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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Effect of the quantum size effect on the performance of solar cells with a silicon nanouwire array embedded in SiO₂. / Kurokawa, Yasuyoshi; Kato, Shinya; Watanabe, Yuya; Yamada, Akira; Konagai, Makoto; Ohta, Yoshimi; Niwa, Yusuke; Hirota, masaki.

2012. 145-150 Poster session presented at 2012 MRS Spring Meeting, San Francisco, CA, United States.

Research output: Contribution to conference › Poster › peer-review

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title = "Effect of the quantum size effect on the performance of solar cells with a silicon nanouwire array embedded in SiO2",

abstract = "The electrical characteristics of silicon nanowire (SiNW) solar cells with p-type hydrogenated amorphous silicon oxide (Eg=1.9 eV)/n-type SiNWs embedded in SiO2/n-type hydrogenated amorphous silicon (E g=1.7 eV) structure have been investigated using a two-dimensional device simulator with taking the quantum size effects into account. The average bandgap of a SiNW embedded in SiO2 increased from 1.15 eV to 2.71 eV with decreasing the diameter from 10 nm to 1 nm due to the quantum size effect. It should be noted that under the sunlight with AM1.5G the open-circuit voltage (Voc) of SiNW solar cells also increased to 1.54 V with decreasing the diameter of the SiNWs to 1 nm. This result suggests that it is possible to enhance the Voc by the quantum size effect and a SiNW is a promising material for the all silicon tandem solar cells.",

author = "Yasuyoshi Kurokawa and Shinya Kato and Yuya Watanabe and Akira Yamada and Makoto Konagai and Yoshimi Ohta and Yusuke Niwa and masaki Hirota",

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AU - Kurokawa, Yasuyoshi

AU - Kato, Shinya

AU - Watanabe, Yuya

AU - Yamada, Akira

AU - Konagai, Makoto

AU - Ohta, Yoshimi

AU - Niwa, Yusuke

AU - Hirota, masaki

PY - 2012/12/28

Y1 - 2012/12/28

N2 - The electrical characteristics of silicon nanowire (SiNW) solar cells with p-type hydrogenated amorphous silicon oxide (Eg=1.9 eV)/n-type SiNWs embedded in SiO2/n-type hydrogenated amorphous silicon (E g=1.7 eV) structure have been investigated using a two-dimensional device simulator with taking the quantum size effects into account. The average bandgap of a SiNW embedded in SiO2 increased from 1.15 eV to 2.71 eV with decreasing the diameter from 10 nm to 1 nm due to the quantum size effect. It should be noted that under the sunlight with AM1.5G the open-circuit voltage (Voc) of SiNW solar cells also increased to 1.54 V with decreasing the diameter of the SiNWs to 1 nm. This result suggests that it is possible to enhance the Voc by the quantum size effect and a SiNW is a promising material for the all silicon tandem solar cells.

AB - The electrical characteristics of silicon nanowire (SiNW) solar cells with p-type hydrogenated amorphous silicon oxide (Eg=1.9 eV)/n-type SiNWs embedded in SiO2/n-type hydrogenated amorphous silicon (E g=1.7 eV) structure have been investigated using a two-dimensional device simulator with taking the quantum size effects into account. The average bandgap of a SiNW embedded in SiO2 increased from 1.15 eV to 2.71 eV with decreasing the diameter from 10 nm to 1 nm due to the quantum size effect. It should be noted that under the sunlight with AM1.5G the open-circuit voltage (Voc) of SiNW solar cells also increased to 1.54 V with decreasing the diameter of the SiNWs to 1 nm. This result suggests that it is possible to enhance the Voc by the quantum size effect and a SiNW is a promising material for the all silicon tandem solar cells.

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