Effect of the quantum size effect on the performance of solar cells with a silicon nanouwire array embedded in SiO2

Yasuyoshi Kurokawa, Shinya Kato, Yuya Watanabe, Akira Yamada, Makoto Konagai, Yoshimi Ohta, Yusuke Niwa, masaki Hirota

Research output: Contribution to conferencePosterpeer-review

Abstract

The electrical characteristics of silicon nanowire (SiNW) solar cells with p-type hydrogenated amorphous silicon oxide (Eg=1.9 eV)/n-type SiNWs embedded in SiO2/n-type hydrogenated amorphous silicon (E g=1.7 eV) structure have been investigated using a two-dimensional device simulator with taking the quantum size effects into account. The average bandgap of a SiNW embedded in SiO2 increased from 1.15 eV to 2.71 eV with decreasing the diameter from 10 nm to 1 nm due to the quantum size effect. It should be noted that under the sunlight with AM1.5G the open-circuit voltage (Voc) of SiNW solar cells also increased to 1.54 V with decreasing the diameter of the SiNWs to 1 nm. This result suggests that it is possible to enhance the Voc by the quantum size effect and a SiNW is a promising material for the all silicon tandem solar cells.

Original languageEnglish
Pages145-150
Number of pages6
DOIs
Publication statusPublished - Dec 28 2012
Externally publishedYes
Event2012 MRS Spring Meeting - San Francisco, CA, United States
Duration: Apr 9 2012Apr 13 2012

Other

Other2012 MRS Spring Meeting
CountryUnited States
CitySan Francisco, CA
Period4/9/124/13/12

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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