Abstract
The electrical characteristics of silicon nanowire (SiNW) solar cells with p-type hydrogenated amorphous silicon oxide (Eg=1.9 eV)/n-type SiNWs embedded in SiO2/n-type hydrogenated amorphous silicon (E g=1.7 eV) structure have been investigated using a two-dimensional device simulator with taking the quantum size effects into account. The average bandgap of a SiNW embedded in SiO2 increased from 1.15 eV to 2.71 eV with decreasing the diameter from 10 nm to 1 nm due to the quantum size effect. It should be noted that under the sunlight with AM1.5G the open-circuit voltage (Voc) of SiNW solar cells also increased to 1.54 V with decreasing the diameter of the SiNWs to 1 nm. This result suggests that it is possible to enhance the Voc by the quantum size effect and a SiNW is a promising material for the all silicon tandem solar cells.
| Original language | English |
|---|---|
| Pages | 145-150 |
| Number of pages | 6 |
| DOIs | |
| Publication status | Published - Dec 28 2012 |
| Externally published | Yes |
| Event | 2012 MRS Spring Meeting - San Francisco, CA, United States Duration: Apr 9 2012 → Apr 13 2012 |
Other
| Other | 2012 MRS Spring Meeting |
|---|---|
| Country | United States |
| City | San Francisco, CA |
| Period | 4/9/12 → 4/13/12 |
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All Science Journal Classification (ASJC) codes
- Materials Science(all)
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering
Cite this
Effect of the quantum size effect on the performance of solar cells with a silicon nanouwire array embedded in SiO2. / Kurokawa, Yasuyoshi; Kato, Shinya; Watanabe, Yuya; Yamada, Akira; Konagai, Makoto; Ohta, Yoshimi; Niwa, Yusuke; Hirota, masaki.
2012. 145-150 Poster session presented at 2012 MRS Spring Meeting, San Francisco, CA, United States.Research output: Contribution to conference › Poster
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TY - CONF
T1 - Effect of the quantum size effect on the performance of solar cells with a silicon nanouwire array embedded in SiO2
AU - Kurokawa, Yasuyoshi
AU - Kato, Shinya
AU - Watanabe, Yuya
AU - Yamada, Akira
AU - Konagai, Makoto
AU - Ohta, Yoshimi
AU - Niwa, Yusuke
AU - Hirota, masaki
PY - 2012/12/28
Y1 - 2012/12/28
N2 - The electrical characteristics of silicon nanowire (SiNW) solar cells with p-type hydrogenated amorphous silicon oxide (Eg=1.9 eV)/n-type SiNWs embedded in SiO2/n-type hydrogenated amorphous silicon (E g=1.7 eV) structure have been investigated using a two-dimensional device simulator with taking the quantum size effects into account. The average bandgap of a SiNW embedded in SiO2 increased from 1.15 eV to 2.71 eV with decreasing the diameter from 10 nm to 1 nm due to the quantum size effect. It should be noted that under the sunlight with AM1.5G the open-circuit voltage (Voc) of SiNW solar cells also increased to 1.54 V with decreasing the diameter of the SiNWs to 1 nm. This result suggests that it is possible to enhance the Voc by the quantum size effect and a SiNW is a promising material for the all silicon tandem solar cells.
AB - The electrical characteristics of silicon nanowire (SiNW) solar cells with p-type hydrogenated amorphous silicon oxide (Eg=1.9 eV)/n-type SiNWs embedded in SiO2/n-type hydrogenated amorphous silicon (E g=1.7 eV) structure have been investigated using a two-dimensional device simulator with taking the quantum size effects into account. The average bandgap of a SiNW embedded in SiO2 increased from 1.15 eV to 2.71 eV with decreasing the diameter from 10 nm to 1 nm due to the quantum size effect. It should be noted that under the sunlight with AM1.5G the open-circuit voltage (Voc) of SiNW solar cells also increased to 1.54 V with decreasing the diameter of the SiNWs to 1 nm. This result suggests that it is possible to enhance the Voc by the quantum size effect and a SiNW is a promising material for the all silicon tandem solar cells.
UR - http://www.scopus.com/inward/record.url?scp=84871510351&partnerID=8YFLogxK
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U2 - 10.1557/opl.2012.1154
DO - 10.1557/opl.2012.1154
M3 - Poster
AN - SCOPUS:84871510351
SP - 145
EP - 150
ER -