Effect of ultrasonic strain on p-type silicon wafers

Kazuki Tsuruta, Masaki Mito, Takuma Nagano, Yuki Katamune, Tsuyoshi Yoshitake

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    2 Citations (Scopus)

    Abstract

    In this paper, we attempt material manipulation of p-type silicon wafers by using dynamic stress with high frequency (called "ultrasonic strain"). A piezoelectric device is used as the source of a time-dependent external field. We have succeeded in manipulating the electrical resistance of a semiconductor p-type silicon wafer with ultrasonic strain with a frequency of 1 MHz. The magnitude of the variation in the electrical resistance was over 2.0 ' 103O and approximately 1.0 ' 103O, corresponding to quadruple and septuple the initial values in the p-type silicon wafers [110] and [100], respectively. The response speed against ultrasonic strain was very fast and was less than 0.2 s, which could yield the basis of a new switching-device mechanism.

    Original languageEnglish
    Article number07KC07
    JournalJapanese journal of applied physics
    Volume53
    Issue number7 SPEC. ISSUE
    DOIs
    Publication statusPublished - Jul 2014

    All Science Journal Classification (ASJC) codes

    • Engineering(all)
    • Physics and Astronomy(all)

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