Effect of uniaxial stress on the lattice spacing of silicon at low temperatures

A. Kohno, Z. Lu, Y. Soejima, A. Okazaki

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Abstract

In a temperature range 25-305 K, the lattice spacing of silicon (444) has been measured by means of high-angle double-crystal X-ray diffractometry (HADOX) in a relative precision to 3 x 10~G. It is found that the effect of uniaxial external stresses on the spacing is anisotropic and about 103 times as large as that expected_from the theory of elasticity. The effect is most remarkable for the stress along [110]; the relative change in the spacing M/d reaches 4 x 10~5 at 5.4 kPa. While the effect is just significant for the stress along [111], i.e. Ad/d~ l x 10~° at 6.9 kPa, it is intermediate for the stress along [112]. In addition, the results suggest that the response to the external stress is similar to that characteristic to viscoelastics.

Original languageEnglish
Pages (from-to)293-298
Number of pages6
JournalNuovo Cimento della Societa Italiana di Fisica D - Condensed Matter, Atomic, Molecular and Chemical Physics, Biophysics
Volume19
Issue number2-4
DOIs
Publication statusPublished - Jan 1 1997

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

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