In a temperature range 25-305 K, the lattice spacing of silicon (444) has been measured by means of high-angle double-crystal X-ray diffractometry (HADOX) in a relative precision to 3 x 10~G. It is found that the effect of uniaxial external stresses on the spacing is anisotropic and about 103 times as large as that expected_from the theory of elasticity. The effect is most remarkable for the stress along ; the relative change in the spacing M/d reaches 4 x 10~5 at 5.4 kPa. While the effect is just significant for the stress along , i.e. Ad/d~ l x 10~° at 6.9 kPa, it is intermediate for the stress along . In addition, the results suggest that the response to the external stress is similar to that characteristic to viscoelastics.
|Number of pages||6|
|Journal||Nuovo Cimento della Societa Italiana di Fisica D - Condensed Matter, Atomic, Molecular and Chemical Physics, Biophysics|
|Publication status||Published - Jan 1 1997|
All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)