Effect of vacancy defects on phonon properties of hydrogen passivated graphene nanoribbons

M. Sherajul Islam, Tanaka Satoru, Akihiro Hashimoto

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

The phonon properties of hydrogen-passivated armchair graphene nanoribbons (AGNRs) with different vacancy concentrations are investigated theoretically. We calculate the change in the phonon density of states (PDOSs) due to a broad range of vacancies and hydrogen passivation effects using forced vibrational method. A large downshift of prominent Raman active U point LO mode phonons with an increase of vacancy concentration or decrease of ribbon widths are observed. We find an increasing peak intensities for the C-H stretching mode with the decrease of ribbon width or the increase of defect density. An inserted vacancy concentration of 10% and higher induce the broadening and distorting of the PDOS peaks significantly. The localization properties of phonon due to defects were also studied. The typical mode pattern of K point iTO mode phonons show the spatial localized vibrations persuaded by armchair edges or vacancies, which are in conceptually good agreement with the large D band of the Raman spectra comes from the armchair-edges or the imperfections of crystal. The typical displacement pattern for C-H stretching mode shows a random displacement of H atoms in contrast to C atoms. Our simulation results show the significant impact of vacancy defects on the vibrational properties of GNRs.

Original languageEnglish
Pages (from-to)146-154
Number of pages9
JournalCarbon
Volume80
Issue number1
DOIs
Publication statusPublished - Jan 1 2014

Fingerprint

Nanoribbons
Carbon Nanotubes
Graphite
Graphene
Vacancies
Hydrogen
Defects
Phonons
Stretching
Atoms
Defect density
Passivation
Raman scattering
Crystals

All Science Journal Classification (ASJC) codes

  • Chemistry(all)

Cite this

Effect of vacancy defects on phonon properties of hydrogen passivated graphene nanoribbons. / Islam, M. Sherajul; Satoru, Tanaka; Hashimoto, Akihiro.

In: Carbon, Vol. 80, No. 1, 01.01.2014, p. 146-154.

Research output: Contribution to journalArticle

Islam, M. Sherajul ; Satoru, Tanaka ; Hashimoto, Akihiro. / Effect of vacancy defects on phonon properties of hydrogen passivated graphene nanoribbons. In: Carbon. 2014 ; Vol. 80, No. 1. pp. 146-154.
@article{fc77daf41c174f29b6272546627eb0d8,
title = "Effect of vacancy defects on phonon properties of hydrogen passivated graphene nanoribbons",
abstract = "The phonon properties of hydrogen-passivated armchair graphene nanoribbons (AGNRs) with different vacancy concentrations are investigated theoretically. We calculate the change in the phonon density of states (PDOSs) due to a broad range of vacancies and hydrogen passivation effects using forced vibrational method. A large downshift of prominent Raman active U point LO mode phonons with an increase of vacancy concentration or decrease of ribbon widths are observed. We find an increasing peak intensities for the C-H stretching mode with the decrease of ribbon width or the increase of defect density. An inserted vacancy concentration of 10{\%} and higher induce the broadening and distorting of the PDOS peaks significantly. The localization properties of phonon due to defects were also studied. The typical mode pattern of K point iTO mode phonons show the spatial localized vibrations persuaded by armchair edges or vacancies, which are in conceptually good agreement with the large D band of the Raman spectra comes from the armchair-edges or the imperfections of crystal. The typical displacement pattern for C-H stretching mode shows a random displacement of H atoms in contrast to C atoms. Our simulation results show the significant impact of vacancy defects on the vibrational properties of GNRs.",
author = "Islam, {M. Sherajul} and Tanaka Satoru and Akihiro Hashimoto",
year = "2014",
month = "1",
day = "1",
doi = "10.1016/j.carbon.2014.08.049",
language = "English",
volume = "80",
pages = "146--154",
journal = "Carbon",
issn = "0008-6223",
publisher = "Elsevier Limited",
number = "1",

}

TY - JOUR

T1 - Effect of vacancy defects on phonon properties of hydrogen passivated graphene nanoribbons

AU - Islam, M. Sherajul

AU - Satoru, Tanaka

AU - Hashimoto, Akihiro

PY - 2014/1/1

Y1 - 2014/1/1

N2 - The phonon properties of hydrogen-passivated armchair graphene nanoribbons (AGNRs) with different vacancy concentrations are investigated theoretically. We calculate the change in the phonon density of states (PDOSs) due to a broad range of vacancies and hydrogen passivation effects using forced vibrational method. A large downshift of prominent Raman active U point LO mode phonons with an increase of vacancy concentration or decrease of ribbon widths are observed. We find an increasing peak intensities for the C-H stretching mode with the decrease of ribbon width or the increase of defect density. An inserted vacancy concentration of 10% and higher induce the broadening and distorting of the PDOS peaks significantly. The localization properties of phonon due to defects were also studied. The typical mode pattern of K point iTO mode phonons show the spatial localized vibrations persuaded by armchair edges or vacancies, which are in conceptually good agreement with the large D band of the Raman spectra comes from the armchair-edges or the imperfections of crystal. The typical displacement pattern for C-H stretching mode shows a random displacement of H atoms in contrast to C atoms. Our simulation results show the significant impact of vacancy defects on the vibrational properties of GNRs.

AB - The phonon properties of hydrogen-passivated armchair graphene nanoribbons (AGNRs) with different vacancy concentrations are investigated theoretically. We calculate the change in the phonon density of states (PDOSs) due to a broad range of vacancies and hydrogen passivation effects using forced vibrational method. A large downshift of prominent Raman active U point LO mode phonons with an increase of vacancy concentration or decrease of ribbon widths are observed. We find an increasing peak intensities for the C-H stretching mode with the decrease of ribbon width or the increase of defect density. An inserted vacancy concentration of 10% and higher induce the broadening and distorting of the PDOS peaks significantly. The localization properties of phonon due to defects were also studied. The typical mode pattern of K point iTO mode phonons show the spatial localized vibrations persuaded by armchair edges or vacancies, which are in conceptually good agreement with the large D band of the Raman spectra comes from the armchair-edges or the imperfections of crystal. The typical displacement pattern for C-H stretching mode shows a random displacement of H atoms in contrast to C atoms. Our simulation results show the significant impact of vacancy defects on the vibrational properties of GNRs.

UR - http://www.scopus.com/inward/record.url?scp=85027936921&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85027936921&partnerID=8YFLogxK

U2 - 10.1016/j.carbon.2014.08.049

DO - 10.1016/j.carbon.2014.08.049

M3 - Article

VL - 80

SP - 146

EP - 154

JO - Carbon

JF - Carbon

SN - 0008-6223

IS - 1

ER -