Effective thickness of CeO2 buffer layer for YBCO coated conductor by advanced TFA-MOD process

Y. Sutoh, K. Nakaoka, Junko Matsuda, Y. Kitoh, T. Nakanishi, A. Nakai, M. Yoshizumi, S. Miyata, Y. Yamada, T. Izumi, Y. Shiohara, T. Saitoh

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

YBCO films were fabricated on PLD-CeO2/IBAD-Gd2Zr2O7/Hastelloy substrates using the advanced TFA-MOD process. The effective thickness of the CeO2 buffer layer for obtaining high Ic was investigated in short samples of YBCO films. The CeO2 buffer layer was epitaxially grown on an IBAD-Gd2Zr2O7 template tape with 18° of Δφ{symbol} by a reel-to-reel PLD system. The in-plane grain alignment of PLD-CeO2 buffer layers rapidly improved with the thickness and saturated at a critical thickness of 0.8 μm. The size of CeO2 grains was about 1 μm at the saturated thickness of Δφ{symbol}. YBCO films with the thickness of 1 μm were deposited by the TFA-MOD on the CeO2 buffer layer with different thickness films. Improvement of the CeO2 in-plane grain alignment resulted in increase of Ic. The Ic values of 250-290 A were obtained with the CeO2 layer thicker than 0.8 μm. The CeO2 thickness, at which the intensity ratio of the BaCeO3 was saturated, corresponded to the critical thickness. From the view points of achieving higher production rates and to obtain the CeO2 Δφ{symbol} value of 5° as well as considering the reaction between YBCO and CeO2, the optimum thickness of the CeO2 buffer layer on the IBAD-Gd2Zr2O7 with 18° of Δφ{symbol} was found to be at least 0.8 μm.

Original languageEnglish
Pages (from-to)571-573
Number of pages3
JournalPhysica C: Superconductivity and its applications
Volume463-465
Issue numberSUPPL.
DOIs
Publication statusPublished - Oct 1 2007
Externally publishedYes

Fingerprint

Buffer layers
Ion beam assisted deposition
conductors
buffers
Pulsed laser deposition
Tapes
alignment
Film thickness
Hastelloy (trademark)
tapes
Substrates
film thickness
templates
1-dodecylpyridoxal

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Energy Engineering and Power Technology
  • Electrical and Electronic Engineering

Cite this

Effective thickness of CeO2 buffer layer for YBCO coated conductor by advanced TFA-MOD process. / Sutoh, Y.; Nakaoka, K.; Matsuda, Junko; Kitoh, Y.; Nakanishi, T.; Nakai, A.; Yoshizumi, M.; Miyata, S.; Yamada, Y.; Izumi, T.; Shiohara, Y.; Saitoh, T.

In: Physica C: Superconductivity and its applications, Vol. 463-465, No. SUPPL., 01.10.2007, p. 571-573.

Research output: Contribution to journalArticle

Sutoh, Y, Nakaoka, K, Matsuda, J, Kitoh, Y, Nakanishi, T, Nakai, A, Yoshizumi, M, Miyata, S, Yamada, Y, Izumi, T, Shiohara, Y & Saitoh, T 2007, 'Effective thickness of CeO2 buffer layer for YBCO coated conductor by advanced TFA-MOD process', Physica C: Superconductivity and its applications, vol. 463-465, no. SUPPL., pp. 571-573. https://doi.org/10.1016/j.physc.2007.05.021
Sutoh, Y. ; Nakaoka, K. ; Matsuda, Junko ; Kitoh, Y. ; Nakanishi, T. ; Nakai, A. ; Yoshizumi, M. ; Miyata, S. ; Yamada, Y. ; Izumi, T. ; Shiohara, Y. ; Saitoh, T. / Effective thickness of CeO2 buffer layer for YBCO coated conductor by advanced TFA-MOD process. In: Physica C: Superconductivity and its applications. 2007 ; Vol. 463-465, No. SUPPL. pp. 571-573.
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AU - Nakaoka, K.

AU - Matsuda, Junko

AU - Kitoh, Y.

AU - Nakanishi, T.

AU - Nakai, A.

AU - Yoshizumi, M.

AU - Miyata, S.

AU - Yamada, Y.

AU - Izumi, T.

AU - Shiohara, Y.

AU - Saitoh, T.

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N2 - YBCO films were fabricated on PLD-CeO2/IBAD-Gd2Zr2O7/Hastelloy substrates using the advanced TFA-MOD process. The effective thickness of the CeO2 buffer layer for obtaining high Ic was investigated in short samples of YBCO films. The CeO2 buffer layer was epitaxially grown on an IBAD-Gd2Zr2O7 template tape with 18° of Δφ{symbol} by a reel-to-reel PLD system. The in-plane grain alignment of PLD-CeO2 buffer layers rapidly improved with the thickness and saturated at a critical thickness of 0.8 μm. The size of CeO2 grains was about 1 μm at the saturated thickness of Δφ{symbol}. YBCO films with the thickness of 1 μm were deposited by the TFA-MOD on the CeO2 buffer layer with different thickness films. Improvement of the CeO2 in-plane grain alignment resulted in increase of Ic. The Ic values of 250-290 A were obtained with the CeO2 layer thicker than 0.8 μm. The CeO2 thickness, at which the intensity ratio of the BaCeO3 was saturated, corresponded to the critical thickness. From the view points of achieving higher production rates and to obtain the CeO2 Δφ{symbol} value of 5° as well as considering the reaction between YBCO and CeO2, the optimum thickness of the CeO2 buffer layer on the IBAD-Gd2Zr2O7 with 18° of Δφ{symbol} was found to be at least 0.8 μm.

AB - YBCO films were fabricated on PLD-CeO2/IBAD-Gd2Zr2O7/Hastelloy substrates using the advanced TFA-MOD process. The effective thickness of the CeO2 buffer layer for obtaining high Ic was investigated in short samples of YBCO films. The CeO2 buffer layer was epitaxially grown on an IBAD-Gd2Zr2O7 template tape with 18° of Δφ{symbol} by a reel-to-reel PLD system. The in-plane grain alignment of PLD-CeO2 buffer layers rapidly improved with the thickness and saturated at a critical thickness of 0.8 μm. The size of CeO2 grains was about 1 μm at the saturated thickness of Δφ{symbol}. YBCO films with the thickness of 1 μm were deposited by the TFA-MOD on the CeO2 buffer layer with different thickness films. Improvement of the CeO2 in-plane grain alignment resulted in increase of Ic. The Ic values of 250-290 A were obtained with the CeO2 layer thicker than 0.8 μm. The CeO2 thickness, at which the intensity ratio of the BaCeO3 was saturated, corresponded to the critical thickness. From the view points of achieving higher production rates and to obtain the CeO2 Δφ{symbol} value of 5° as well as considering the reaction between YBCO and CeO2, the optimum thickness of the CeO2 buffer layer on the IBAD-Gd2Zr2O7 with 18° of Δφ{symbol} was found to be at least 0.8 μm.

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