Effects of Ar addition on breakdown voltage in a Si(CH3) 2(OCH3)2 RF discharge

Giichiro Uchida, Shota Nunomutra, Hiroshi Miyata, Shinya Iwashita, Dsaisuke Yamashita, Hidefumi Matsuzaki, Kunihiro Kamataki, Naho Itagaki, Kazunori Koga, Masaharu Shiratani

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We present detailed measurements on breakdown voltage (Vf) in a RF discharge with Si(CH3)2(OCH3)2 gas diluted with Ar. When Ar concentration (PAr) is increased, the Vf gradually decreases up to PAr = 50 %, and then is followed by a drastic decrease. The PAr dependence of Vf is well explained by a feature of the ion-induced secondary electron emission coefficient (γ) deduced from measured Paschen curves. A drastic increase in Ar ion flux with PAr induces high emission of electrons from cathode surface, resulting in lowing Vf.

Original languageEnglish
Title of host publicationTENCON 2010 - 2010 IEEE Region 10 Conference
Pages2199-2201
Number of pages3
DOIs
Publication statusPublished - 2010
Event2010 IEEE Region 10 Conference, TENCON 2010 - Fukuoka, Japan
Duration: Nov 21 2010Nov 24 2010

Publication series

NameIEEE Region 10 Annual International Conference, Proceedings/TENCON

Other

Other2010 IEEE Region 10 Conference, TENCON 2010
CountryJapan
CityFukuoka
Period11/21/1011/24/10

All Science Journal Classification (ASJC) codes

  • Computer Science Applications
  • Electrical and Electronic Engineering

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