Effects of atmosphere and ultraviolet light irradiation on chemical mechanical polishing characteristics of SiC wafers

Osamu Ohnishi, Toshiro Doi, Syuhei Kurokawa, Tsutomu Yamazaki, Michio Uneda, Tao Yin, Isamu Koshiyama, Koichiro Ichikawa, Hideo Aida

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

To establish a high-efficiency and high-quality polishing process by controlling the workpiece environment, a prototype chemical mechanical polishing (CMP) machine that can perform double-side CMP simultaneously in a sealed pressure chamber was developed. Using this new machine, polishing experiments on single crystalline silicon carbide (SiC) wafers were carried out. The results showed that applying a highly pressurized O2 gas and ultraviolet light irradiation were effective in SiC CMP.

Original languageEnglish
Article number05EF05
JournalJapanese journal of applied physics
Volume51
Issue number5 PART 2
DOIs
Publication statusPublished - May 1 2012

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Chemical mechanical polishing
Polishing machines
polishing
Silicon carbide
silicon carbides
ultraviolet radiation
Irradiation
wafers
atmospheres
irradiation
Polishing
pressure chambers
Crystalline materials
Gases
prototypes
Ultraviolet Rays
Experiments
gases

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

Effects of atmosphere and ultraviolet light irradiation on chemical mechanical polishing characteristics of SiC wafers. / Ohnishi, Osamu; Doi, Toshiro; Kurokawa, Syuhei; Yamazaki, Tsutomu; Uneda, Michio; Yin, Tao; Koshiyama, Isamu; Ichikawa, Koichiro; Aida, Hideo.

In: Japanese journal of applied physics, Vol. 51, No. 5 PART 2, 05EF05, 01.05.2012.

Research output: Contribution to journalArticle

Ohnishi, Osamu ; Doi, Toshiro ; Kurokawa, Syuhei ; Yamazaki, Tsutomu ; Uneda, Michio ; Yin, Tao ; Koshiyama, Isamu ; Ichikawa, Koichiro ; Aida, Hideo. / Effects of atmosphere and ultraviolet light irradiation on chemical mechanical polishing characteristics of SiC wafers. In: Japanese journal of applied physics. 2012 ; Vol. 51, No. 5 PART 2.
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