Effects of crystallite size and donor density on the sensor response of SnO 2 nano-particles in the state of volume depletion

Koichi Suematsu, Masayoshi Yuasa, Tetsuya Kida, Noboru Yamazoe, Kengo Shimanoe

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

To verify theoretical model based on the surface depletion effect of oxide semiconductor in small crystallite, the SnO 2 particles of different crystallite size and donor density were prepared by controlling heat-treatment temperature and Fe 3+ doping concentration, respectively. In addition, Fe 3+-doped SnO 2 was compared with Fe 2O 3-loaded SnO 2 to discuss the effect of donor density. The electrical resistance and sensor response of prepared SnO 2 films were measured in various partial pressures of oxygen and hydrogen. As results, both undoped-and Fe 3+-doped SnO 2 showed the volume depletion in the oxygen concentration of more than 2.5% at 350°C. The dependence of electrical resistance on oxygen partial pressure for smaller crystallite had steeper slope. Furthermore Fe 3+-doping improved the sensor response to hydrogen, while the Fe 2O 3-loading did not work. Good agreement between experimental data the volume depletion theory was found.

Original languageEnglish
JournalJournal of the Electrochemical Society
Volume159
Issue number4
DOIs
Publication statusPublished - Feb 29 2012

Fingerprint

Crystallite size
depletion
Acoustic impedance
Oxygen
electrical resistance
Partial pressure
partial pressure
Hydrogen
sensors
Sensors
oxygen
Doping (additives)
hydrogen
heat treatment
Heat treatment
slopes
oxides
Temperature
temperature

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Renewable Energy, Sustainability and the Environment
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Electrochemistry
  • Materials Chemistry

Cite this

Effects of crystallite size and donor density on the sensor response of SnO 2 nano-particles in the state of volume depletion. / Suematsu, Koichi; Yuasa, Masayoshi; Kida, Tetsuya; Yamazoe, Noboru; Shimanoe, Kengo.

In: Journal of the Electrochemical Society, Vol. 159, No. 4, 29.02.2012.

Research output: Contribution to journalArticle

@article{a3de8e0690a44b55b4e16852033247ec,
title = "Effects of crystallite size and donor density on the sensor response of SnO 2 nano-particles in the state of volume depletion",
abstract = "To verify theoretical model based on the surface depletion effect of oxide semiconductor in small crystallite, the SnO 2 particles of different crystallite size and donor density were prepared by controlling heat-treatment temperature and Fe 3+ doping concentration, respectively. In addition, Fe 3+-doped SnO 2 was compared with Fe 2O 3-loaded SnO 2 to discuss the effect of donor density. The electrical resistance and sensor response of prepared SnO 2 films were measured in various partial pressures of oxygen and hydrogen. As results, both undoped-and Fe 3+-doped SnO 2 showed the volume depletion in the oxygen concentration of more than 2.5{\%} at 350°C. The dependence of electrical resistance on oxygen partial pressure for smaller crystallite had steeper slope. Furthermore Fe 3+-doping improved the sensor response to hydrogen, while the Fe 2O 3-loading did not work. Good agreement between experimental data the volume depletion theory was found.",
author = "Koichi Suematsu and Masayoshi Yuasa and Tetsuya Kida and Noboru Yamazoe and Kengo Shimanoe",
year = "2012",
month = "2",
day = "29",
doi = "10.1149/2.107204jes",
language = "English",
volume = "159",
journal = "Journal of the Electrochemical Society",
issn = "0013-4651",
publisher = "Electrochemical Society, Inc.",
number = "4",

}

TY - JOUR

T1 - Effects of crystallite size and donor density on the sensor response of SnO 2 nano-particles in the state of volume depletion

AU - Suematsu, Koichi

AU - Yuasa, Masayoshi

AU - Kida, Tetsuya

AU - Yamazoe, Noboru

AU - Shimanoe, Kengo

PY - 2012/2/29

Y1 - 2012/2/29

N2 - To verify theoretical model based on the surface depletion effect of oxide semiconductor in small crystallite, the SnO 2 particles of different crystallite size and donor density were prepared by controlling heat-treatment temperature and Fe 3+ doping concentration, respectively. In addition, Fe 3+-doped SnO 2 was compared with Fe 2O 3-loaded SnO 2 to discuss the effect of donor density. The electrical resistance and sensor response of prepared SnO 2 films were measured in various partial pressures of oxygen and hydrogen. As results, both undoped-and Fe 3+-doped SnO 2 showed the volume depletion in the oxygen concentration of more than 2.5% at 350°C. The dependence of electrical resistance on oxygen partial pressure for smaller crystallite had steeper slope. Furthermore Fe 3+-doping improved the sensor response to hydrogen, while the Fe 2O 3-loading did not work. Good agreement between experimental data the volume depletion theory was found.

AB - To verify theoretical model based on the surface depletion effect of oxide semiconductor in small crystallite, the SnO 2 particles of different crystallite size and donor density were prepared by controlling heat-treatment temperature and Fe 3+ doping concentration, respectively. In addition, Fe 3+-doped SnO 2 was compared with Fe 2O 3-loaded SnO 2 to discuss the effect of donor density. The electrical resistance and sensor response of prepared SnO 2 films were measured in various partial pressures of oxygen and hydrogen. As results, both undoped-and Fe 3+-doped SnO 2 showed the volume depletion in the oxygen concentration of more than 2.5% at 350°C. The dependence of electrical resistance on oxygen partial pressure for smaller crystallite had steeper slope. Furthermore Fe 3+-doping improved the sensor response to hydrogen, while the Fe 2O 3-loading did not work. Good agreement between experimental data the volume depletion theory was found.

UR - http://www.scopus.com/inward/record.url?scp=84857418755&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84857418755&partnerID=8YFLogxK

U2 - 10.1149/2.107204jes

DO - 10.1149/2.107204jes

M3 - Article

VL - 159

JO - Journal of the Electrochemical Society

JF - Journal of the Electrochemical Society

SN - 0013-4651

IS - 4

ER -