Effects of dopant contents on structural, morphological and optical properties of Er doped Ga2O3 films

Zhengwei Chen; Xu Wang; Shinji Noda; Katsuhiko Saito; Tooru Tanaka; Mitsuhiro Nishio; Makoto Arita; Qixin Guo

doi:10.1016/j.spmi.2015.12.025

Effects of dopant contents on structural, morphological and optical properties of Er doped Ga₂O₃ films

Zhengwei Chen, Xu Wang, Shinji Noda, Katsuhiko Saito, Tooru Tanaka, Mitsuhiro Nishio, Makoto Arita, Qixin Guo

Advanced Materials Physics

Research output: Contribution to journal › Article › peer-review

31 Citations (Scopus)

Abstract

We have investigated structural, morphological and optical properties of erbium (Er) doped Ga₂O₃ films with different Er contents. All the films were deposited on sapphire substrates by pulsed laser deposition. Temperature insensitive pure green luminescence at 550 nm has been demonstrated from these films. No peak shift at 550 nm is found with temperatures ranging from 77 to 450 K. The intensity of the green emission decreases with the increase of temperature, and the normalized intensity of the Er doped Ga₂O₃ films has a smaller variation with temperature compared to Er doped GaN films. These results indicate that Ga₂O₃ is a good host material for Er and potentially for other rare earth elements.

Original language	English
Pages (from-to)	207-214
Number of pages	8
Journal	Superlattices and Microstructures
Volume	90
DOIs	https://doi.org/10.1016/j.spmi.2015.12.025
Publication status	Published - Feb 1 2016

All Science Journal Classification (ASJC) codes

Materials Science(all)
Condensed Matter Physics
Electrical and Electronic Engineering

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title = "Effects of dopant contents on structural, morphological and optical properties of Er doped Ga2O3 films",

abstract = "We have investigated structural, morphological and optical properties of erbium (Er) doped Ga2O3 films with different Er contents. All the films were deposited on sapphire substrates by pulsed laser deposition. Temperature insensitive pure green luminescence at 550 nm has been demonstrated from these films. No peak shift at 550 nm is found with temperatures ranging from 77 to 450 K. The intensity of the green emission decreases with the increase of temperature, and the normalized intensity of the Er doped Ga2O3 films has a smaller variation with temperature compared to Er doped GaN films. These results indicate that Ga2O3 is a good host material for Er and potentially for other rare earth elements.",

author = "Zhengwei Chen and Xu Wang and Shinji Noda and Katsuhiko Saito and Tooru Tanaka and Mitsuhiro Nishio and Makoto Arita and Qixin Guo",

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T1 - Effects of dopant contents on structural, morphological and optical properties of Er doped Ga2O3 films

AU - Chen, Zhengwei

AU - Wang, Xu

AU - Noda, Shinji

AU - Saito, Katsuhiko

AU - Tanaka, Tooru

AU - Nishio, Mitsuhiro

AU - Arita, Makoto

AU - Guo, Qixin

PY - 2016/2/1

Y1 - 2016/2/1

N2 - We have investigated structural, morphological and optical properties of erbium (Er) doped Ga2O3 films with different Er contents. All the films were deposited on sapphire substrates by pulsed laser deposition. Temperature insensitive pure green luminescence at 550 nm has been demonstrated from these films. No peak shift at 550 nm is found with temperatures ranging from 77 to 450 K. The intensity of the green emission decreases with the increase of temperature, and the normalized intensity of the Er doped Ga2O3 films has a smaller variation with temperature compared to Er doped GaN films. These results indicate that Ga2O3 is a good host material for Er and potentially for other rare earth elements.

AB - We have investigated structural, morphological and optical properties of erbium (Er) doped Ga2O3 films with different Er contents. All the films were deposited on sapphire substrates by pulsed laser deposition. Temperature insensitive pure green luminescence at 550 nm has been demonstrated from these films. No peak shift at 550 nm is found with temperatures ranging from 77 to 450 K. The intensity of the green emission decreases with the increase of temperature, and the normalized intensity of the Er doped Ga2O3 films has a smaller variation with temperature compared to Er doped GaN films. These results indicate that Ga2O3 is a good host material for Er and potentially for other rare earth elements.

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