Abstract
We have investigated structural, morphological and optical properties of erbium (Er) doped Ga2O3 films with different Er contents. All the films were deposited on sapphire substrates by pulsed laser deposition. Temperature insensitive pure green luminescence at 550 nm has been demonstrated from these films. No peak shift at 550 nm is found with temperatures ranging from 77 to 450 K. The intensity of the green emission decreases with the increase of temperature, and the normalized intensity of the Er doped Ga2O3 films has a smaller variation with temperature compared to Er doped GaN films. These results indicate that Ga2O3 is a good host material for Er and potentially for other rare earth elements.
| Original language | English |
|---|---|
| Pages (from-to) | 207-214 |
| Number of pages | 8 |
| Journal | Superlattices and Microstructures |
| Volume | 90 |
| DOIs | |
| Publication status | Published - Feb 1 2016 |
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All Science Journal Classification (ASJC) codes
- Materials Science(all)
- Condensed Matter Physics
- Electrical and Electronic Engineering
Cite this
Effects of dopant contents on structural, morphological and optical properties of Er doped Ga2O3 films. / Chen, Zhengwei; Wang, Xu; Noda, Shinji; Saito, Katsuhiko; Tanaka, Tooru; Nishio, Mitsuhiro; Arita, Makoto; Guo, Qixin.
In: Superlattices and Microstructures, Vol. 90, 01.02.2016, p. 207-214.Research output: Contribution to journal › Article
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TY - JOUR
T1 - Effects of dopant contents on structural, morphological and optical properties of Er doped Ga2O3 films
AU - Chen, Zhengwei
AU - Wang, Xu
AU - Noda, Shinji
AU - Saito, Katsuhiko
AU - Tanaka, Tooru
AU - Nishio, Mitsuhiro
AU - Arita, Makoto
AU - Guo, Qixin
PY - 2016/2/1
Y1 - 2016/2/1
N2 - We have investigated structural, morphological and optical properties of erbium (Er) doped Ga2O3 films with different Er contents. All the films were deposited on sapphire substrates by pulsed laser deposition. Temperature insensitive pure green luminescence at 550 nm has been demonstrated from these films. No peak shift at 550 nm is found with temperatures ranging from 77 to 450 K. The intensity of the green emission decreases with the increase of temperature, and the normalized intensity of the Er doped Ga2O3 films has a smaller variation with temperature compared to Er doped GaN films. These results indicate that Ga2O3 is a good host material for Er and potentially for other rare earth elements.
AB - We have investigated structural, morphological and optical properties of erbium (Er) doped Ga2O3 films with different Er contents. All the films were deposited on sapphire substrates by pulsed laser deposition. Temperature insensitive pure green luminescence at 550 nm has been demonstrated from these films. No peak shift at 550 nm is found with temperatures ranging from 77 to 450 K. The intensity of the green emission decreases with the increase of temperature, and the normalized intensity of the Er doped Ga2O3 films has a smaller variation with temperature compared to Er doped GaN films. These results indicate that Ga2O3 is a good host material for Er and potentially for other rare earth elements.
UR - http://www.scopus.com/inward/record.url?scp=84956676911&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84956676911&partnerID=8YFLogxK
U2 - 10.1016/j.spmi.2015.12.025
DO - 10.1016/j.spmi.2015.12.025
M3 - Article
AN - SCOPUS:84956676911
VL - 90
SP - 207
EP - 214
JO - Superlattices and Microstructures
JF - Superlattices and Microstructures
SN - 0749-6036
ER -