Abstract
The role of electric field in metal-induced lateral crystallization (MILC) of amorphous Si (a-Si) under limited Ni-supply condition has been investigated. The nominal lateral-growth rate was increased from 3.6 μm/h (no-electric field) to 23 μm/h at the positive electrode side and reduced to 2.8 μm/h at the negative electrode side in presence of the electric field of 20 V/cm. However, spontaneously nucleated needle-like Si crystals were observed in the enhanced positive electrode side, which have been found to be independent of the MILC. Further investigation under the condition where Ni in the supply region was removed on the way of crystallization revealed that the electric field enhanced crystallization greatly reduced. These results indicate that the electric field does not enhance the MILC growth but enhances the diffusion of Ni in a-Si which takes place prior to the MILC growth.
| Original language | English |
|---|---|
| Pages (from-to) | 662-666 |
| Number of pages | 5 |
| Journal | IEICE Transactions on Electronics |
| Volume | E88-C |
| Issue number | 4 |
| DOIs | |
| Publication status | Published - Jan 1 2005 |
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering