Abstract
Fine size Ni/Sn bumps were formed by electroless Ni/Sn plating and hydrogen plasma reflow, and then electrical characteristics of nMOSFETs and pMOSFETs were evaluated on the bumped chips. After the hydrogen plasma reflow, threshold voltages and carrier mobilities were not changed from those of the nMOSFETs and pMOSFETs as fabricated, before Ni/Sn plating. Also, gate leak currents were not increased by the plasma reflow for both the nMOSFETs and pMOSFETs. Off leak currents of the nMOSFETs were slightly decreased after the plasma reflow. In contrast, off leak currents of the pMOSFETs were slightly increased up to several tens of pA after the plasma reflow. However, the changes of the off leak currents by the plasma reflow were very small for both the nMOSFETs and pMOSFETs. Electrical damages induced by the plasma reflow were negligible for both the nMOSFETs and pMOSFETs.
| Original language | English |
|---|---|
| Title of host publication | 9th Electronics Packaging Technology Conference, EPTC 2007 |
| Pages | 926-930 |
| Number of pages | 5 |
| DOIs | |
| Publication status | Published - Dec 1 2007 |
| Event | 9th Electronics Packaging Technology Conference, EPTC 2007 - , Singapore Duration: Dec 12 2007 → Dec 12 2007 |
Publication series
| Name | Proceedings of the Electronic Packaging Technology Conference, EPTC |
|---|
Other
| Other | 9th Electronics Packaging Technology Conference, EPTC 2007 |
|---|---|
| Country | Singapore |
| Period | 12/12/07 → 12/12/07 |
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All Science Journal Classification (ASJC) codes
- Engineering(all)
Cite this
Effects of electroless Ni/Sn bump formation using hydrogen-plasma reflow on the electrical characteristics of MOSFETs. / Ikeda, Akihiro; Kimiya, Yashuhiro; Fukunaga, Yoshiaki; Ogi, Hiroshi; Hattori, Reiji; Kuriyaki, Hisao; Ohno, Yashuhide; Kuroki, Yukinori.
9th Electronics Packaging Technology Conference, EPTC 2007. 2007. p. 926-930 4469695 (Proceedings of the Electronic Packaging Technology Conference, EPTC).Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
}
TY - GEN
T1 - Effects of electroless Ni/Sn bump formation using hydrogen-plasma reflow on the electrical characteristics of MOSFETs
AU - Ikeda, Akihiro
AU - Kimiya, Yashuhiro
AU - Fukunaga, Yoshiaki
AU - Ogi, Hiroshi
AU - Hattori, Reiji
AU - Kuriyaki, Hisao
AU - Ohno, Yashuhide
AU - Kuroki, Yukinori
PY - 2007/12/1
Y1 - 2007/12/1
N2 - Fine size Ni/Sn bumps were formed by electroless Ni/Sn plating and hydrogen plasma reflow, and then electrical characteristics of nMOSFETs and pMOSFETs were evaluated on the bumped chips. After the hydrogen plasma reflow, threshold voltages and carrier mobilities were not changed from those of the nMOSFETs and pMOSFETs as fabricated, before Ni/Sn plating. Also, gate leak currents were not increased by the plasma reflow for both the nMOSFETs and pMOSFETs. Off leak currents of the nMOSFETs were slightly decreased after the plasma reflow. In contrast, off leak currents of the pMOSFETs were slightly increased up to several tens of pA after the plasma reflow. However, the changes of the off leak currents by the plasma reflow were very small for both the nMOSFETs and pMOSFETs. Electrical damages induced by the plasma reflow were negligible for both the nMOSFETs and pMOSFETs.
AB - Fine size Ni/Sn bumps were formed by electroless Ni/Sn plating and hydrogen plasma reflow, and then electrical characteristics of nMOSFETs and pMOSFETs were evaluated on the bumped chips. After the hydrogen plasma reflow, threshold voltages and carrier mobilities were not changed from those of the nMOSFETs and pMOSFETs as fabricated, before Ni/Sn plating. Also, gate leak currents were not increased by the plasma reflow for both the nMOSFETs and pMOSFETs. Off leak currents of the nMOSFETs were slightly decreased after the plasma reflow. In contrast, off leak currents of the pMOSFETs were slightly increased up to several tens of pA after the plasma reflow. However, the changes of the off leak currents by the plasma reflow were very small for both the nMOSFETs and pMOSFETs. Electrical damages induced by the plasma reflow were negligible for both the nMOSFETs and pMOSFETs.
UR - http://www.scopus.com/inward/record.url?scp=50049104755&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=50049104755&partnerID=8YFLogxK
U2 - 10.1109/EPTC.2007.4469695
DO - 10.1109/EPTC.2007.4469695
M3 - Conference contribution
AN - SCOPUS:50049104755
SN - 1424413249
SN - 9781424413249
T3 - Proceedings of the Electronic Packaging Technology Conference, EPTC
SP - 926
EP - 930
BT - 9th Electronics Packaging Technology Conference, EPTC 2007
ER -