Effects of electroless Ni/Sn bump formation using hydrogen-plasma reflow on the electrical characteristics of MOSFETs

Akihiro Ikeda; Yashuhiro Kimiya; Yoshiaki Fukunaga; Hiroshi Ogi; Reiji Hattori; Hisao Kuriyaki; Yashuhide Ohno; Yukinori Kuroki

doi:10.1109/EPTC.2007.4469695

Effects of electroless Ni/Sn bump formation using hydrogen-plasma reflow on the electrical characteristics of MOSFETs

Akihiro Ikeda, Yashuhiro Kimiya, Yoshiaki Fukunaga, Hiroshi Ogi, Reiji Hattori, Hisao Kuriyaki, Yashuhide Ohno, Yukinori Kuroki

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Fine size Ni/Sn bumps were formed by electroless Ni/Sn plating and hydrogen plasma reflow, and then electrical characteristics of nMOSFETs and pMOSFETs were evaluated on the bumped chips. After the hydrogen plasma reflow, threshold voltages and carrier mobilities were not changed from those of the nMOSFETs and pMOSFETs as fabricated, before Ni/Sn plating. Also, gate leak currents were not increased by the plasma reflow for both the nMOSFETs and pMOSFETs. Off leak currents of the nMOSFETs were slightly decreased after the plasma reflow. In contrast, off leak currents of the pMOSFETs were slightly increased up to several tens of pA after the plasma reflow. However, the changes of the off leak currents by the plasma reflow were very small for both the nMOSFETs and pMOSFETs. Electrical damages induced by the plasma reflow were negligible for both the nMOSFETs and pMOSFETs.

Original language	English
Title of host publication	9th Electronics Packaging Technology Conference, EPTC 2007
Pages	926-930
Number of pages	5
DOIs	https://doi.org/10.1109/EPTC.2007.4469695
Publication status	Published - 2007
Event	9th Electronics Packaging Technology Conference, EPTC 2007 - , Singapore Duration: Dec 12 2007 → Dec 12 2007

Publication series

Name	Proceedings of the Electronic Packaging Technology Conference, EPTC

Other

Other	9th Electronics Packaging Technology Conference, EPTC 2007
Country/Territory	Singapore
Period	12/12/07 → 12/12/07

All Science Journal Classification (ASJC) codes

Engineering(all)

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10.1109/EPTC.2007.4469695

Cite this

Ikeda, A., Kimiya, Y., Fukunaga, Y., Ogi, H., Hattori, R., Kuriyaki, H., Ohno, Y., & Kuroki, Y. (2007). Effects of electroless Ni/Sn bump formation using hydrogen-plasma reflow on the electrical characteristics of MOSFETs. In 9th Electronics Packaging Technology Conference, EPTC 2007 (pp. 926-930). [4469695] (Proceedings of the Electronic Packaging Technology Conference, EPTC). https://doi.org/10.1109/EPTC.2007.4469695

Effects of electroless Ni/Sn bump formation using hydrogen-plasma reflow on the electrical characteristics of MOSFETs. / Ikeda, Akihiro; Kimiya, Yashuhiro; Fukunaga, Yoshiaki et al.

9th Electronics Packaging Technology Conference, EPTC 2007. 2007. p. 926-930 4469695 (Proceedings of the Electronic Packaging Technology Conference, EPTC).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Ikeda, A, Kimiya, Y, Fukunaga, Y, Ogi, H, Hattori, R, Kuriyaki, H, Ohno, Y & Kuroki, Y 2007, Effects of electroless Ni/Sn bump formation using hydrogen-plasma reflow on the electrical characteristics of MOSFETs. in 9th Electronics Packaging Technology Conference, EPTC 2007., 4469695, Proceedings of the Electronic Packaging Technology Conference, EPTC, pp. 926-930, 9th Electronics Packaging Technology Conference, EPTC 2007, Singapore, 12/12/07. https://doi.org/10.1109/EPTC.2007.4469695

Ikeda A, Kimiya Y, Fukunaga Y, Ogi H, Hattori R, Kuriyaki H et al. Effects of electroless Ni/Sn bump formation using hydrogen-plasma reflow on the electrical characteristics of MOSFETs. In 9th Electronics Packaging Technology Conference, EPTC 2007. 2007. p. 926-930. 4469695. (Proceedings of the Electronic Packaging Technology Conference, EPTC). doi: 10.1109/EPTC.2007.4469695

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title = "Effects of electroless Ni/Sn bump formation using hydrogen-plasma reflow on the electrical characteristics of MOSFETs",

abstract = "Fine size Ni/Sn bumps were formed by electroless Ni/Sn plating and hydrogen plasma reflow, and then electrical characteristics of nMOSFETs and pMOSFETs were evaluated on the bumped chips. After the hydrogen plasma reflow, threshold voltages and carrier mobilities were not changed from those of the nMOSFETs and pMOSFETs as fabricated, before Ni/Sn plating. Also, gate leak currents were not increased by the plasma reflow for both the nMOSFETs and pMOSFETs. Off leak currents of the nMOSFETs were slightly decreased after the plasma reflow. In contrast, off leak currents of the pMOSFETs were slightly increased up to several tens of pA after the plasma reflow. However, the changes of the off leak currents by the plasma reflow were very small for both the nMOSFETs and pMOSFETs. Electrical damages induced by the plasma reflow were negligible for both the nMOSFETs and pMOSFETs.",

author = "Akihiro Ikeda and Yashuhiro Kimiya and Yoshiaki Fukunaga and Hiroshi Ogi and Reiji Hattori and Hisao Kuriyaki and Yashuhide Ohno and Yukinori Kuroki",

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doi = "10.1109/EPTC.2007.4469695",

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AU - Ikeda, Akihiro

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AU - Fukunaga, Yoshiaki

AU - Ogi, Hiroshi

AU - Hattori, Reiji

AU - Kuriyaki, Hisao

AU - Ohno, Yashuhide

AU - Kuroki, Yukinori

PY - 2007

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N2 - Fine size Ni/Sn bumps were formed by electroless Ni/Sn plating and hydrogen plasma reflow, and then electrical characteristics of nMOSFETs and pMOSFETs were evaluated on the bumped chips. After the hydrogen plasma reflow, threshold voltages and carrier mobilities were not changed from those of the nMOSFETs and pMOSFETs as fabricated, before Ni/Sn plating. Also, gate leak currents were not increased by the plasma reflow for both the nMOSFETs and pMOSFETs. Off leak currents of the nMOSFETs were slightly decreased after the plasma reflow. In contrast, off leak currents of the pMOSFETs were slightly increased up to several tens of pA after the plasma reflow. However, the changes of the off leak currents by the plasma reflow were very small for both the nMOSFETs and pMOSFETs. Electrical damages induced by the plasma reflow were negligible for both the nMOSFETs and pMOSFETs.

AB - Fine size Ni/Sn bumps were formed by electroless Ni/Sn plating and hydrogen plasma reflow, and then electrical characteristics of nMOSFETs and pMOSFETs were evaluated on the bumped chips. After the hydrogen plasma reflow, threshold voltages and carrier mobilities were not changed from those of the nMOSFETs and pMOSFETs as fabricated, before Ni/Sn plating. Also, gate leak currents were not increased by the plasma reflow for both the nMOSFETs and pMOSFETs. Off leak currents of the nMOSFETs were slightly decreased after the plasma reflow. In contrast, off leak currents of the pMOSFETs were slightly increased up to several tens of pA after the plasma reflow. However, the changes of the off leak currents by the plasma reflow were very small for both the nMOSFETs and pMOSFETs. Electrical damages induced by the plasma reflow were negligible for both the nMOSFETs and pMOSFETs.

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Effects of electroless Ni/Sn bump formation using hydrogen-plasma reflow on the electrical characteristics of MOSFETs

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