TY - GEN
T1 - Effects of electroless Ni/Sn bump formation using hydrogen-plasma reflow on the electrical characteristics of MOSFETs
AU - Ikeda, Akihiro
AU - Kimiya, Yashuhiro
AU - Fukunaga, Yoshiaki
AU - Ogi, Hiroshi
AU - Hattori, Reiji
AU - Kuriyaki, Hisao
AU - Ohno, Yashuhide
AU - Kuroki, Yukinori
PY - 2007
Y1 - 2007
N2 - Fine size Ni/Sn bumps were formed by electroless Ni/Sn plating and hydrogen plasma reflow, and then electrical characteristics of nMOSFETs and pMOSFETs were evaluated on the bumped chips. After the hydrogen plasma reflow, threshold voltages and carrier mobilities were not changed from those of the nMOSFETs and pMOSFETs as fabricated, before Ni/Sn plating. Also, gate leak currents were not increased by the plasma reflow for both the nMOSFETs and pMOSFETs. Off leak currents of the nMOSFETs were slightly decreased after the plasma reflow. In contrast, off leak currents of the pMOSFETs were slightly increased up to several tens of pA after the plasma reflow. However, the changes of the off leak currents by the plasma reflow were very small for both the nMOSFETs and pMOSFETs. Electrical damages induced by the plasma reflow were negligible for both the nMOSFETs and pMOSFETs.
AB - Fine size Ni/Sn bumps were formed by electroless Ni/Sn plating and hydrogen plasma reflow, and then electrical characteristics of nMOSFETs and pMOSFETs were evaluated on the bumped chips. After the hydrogen plasma reflow, threshold voltages and carrier mobilities were not changed from those of the nMOSFETs and pMOSFETs as fabricated, before Ni/Sn plating. Also, gate leak currents were not increased by the plasma reflow for both the nMOSFETs and pMOSFETs. Off leak currents of the nMOSFETs were slightly decreased after the plasma reflow. In contrast, off leak currents of the pMOSFETs were slightly increased up to several tens of pA after the plasma reflow. However, the changes of the off leak currents by the plasma reflow were very small for both the nMOSFETs and pMOSFETs. Electrical damages induced by the plasma reflow were negligible for both the nMOSFETs and pMOSFETs.
UR - http://www.scopus.com/inward/record.url?scp=50049104755&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=50049104755&partnerID=8YFLogxK
U2 - 10.1109/EPTC.2007.4469695
DO - 10.1109/EPTC.2007.4469695
M3 - Conference contribution
AN - SCOPUS:50049104755
SN - 1424413249
SN - 9781424413249
T3 - Proceedings of the Electronic Packaging Technology Conference, EPTC
SP - 926
EP - 930
BT - 9th Electronics Packaging Technology Conference, EPTC 2007
T2 - 9th Electronics Packaging Technology Conference, EPTC 2007
Y2 - 11 December 2007 through 11 December 2007
ER -