Effects of electroless Ni/Sn bump formation using hydrogen-plasma reflow on the electrical characteristics of MOSFETs

Akihiro Ikeda, Yashuhiro Kimiya, Yoshiaki Fukunaga, Hiroshi Ogi, Reiji Hattori, Hisao Kuriyaki, Yashuhide Ohno, Yukinori Kuroki

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Fine size Ni/Sn bumps were formed by electroless Ni/Sn plating and hydrogen plasma reflow, and then electrical characteristics of nMOSFETs and pMOSFETs were evaluated on the bumped chips. After the hydrogen plasma reflow, threshold voltages and carrier mobilities were not changed from those of the nMOSFETs and pMOSFETs as fabricated, before Ni/Sn plating. Also, gate leak currents were not increased by the plasma reflow for both the nMOSFETs and pMOSFETs. Off leak currents of the nMOSFETs were slightly decreased after the plasma reflow. In contrast, off leak currents of the pMOSFETs were slightly increased up to several tens of pA after the plasma reflow. However, the changes of the off leak currents by the plasma reflow were very small for both the nMOSFETs and pMOSFETs. Electrical damages induced by the plasma reflow were negligible for both the nMOSFETs and pMOSFETs.

Original languageEnglish
Title of host publication9th Electronics Packaging Technology Conference, EPTC 2007
Pages926-930
Number of pages5
DOIs
Publication statusPublished - 2007
Event9th Electronics Packaging Technology Conference, EPTC 2007 - , Singapore
Duration: Dec 12 2007Dec 12 2007

Publication series

NameProceedings of the Electronic Packaging Technology Conference, EPTC

Other

Other9th Electronics Packaging Technology Conference, EPTC 2007
Country/TerritorySingapore
Period12/12/0712/12/07

All Science Journal Classification (ASJC) codes

  • Engineering(all)

Fingerprint

Dive into the research topics of 'Effects of electroless Ni/Sn bump formation using hydrogen-plasma reflow on the electrical characteristics of MOSFETs'. Together they form a unique fingerprint.

Cite this