Effects of electron concentration on the optical absorption edge of InN

J. Wu, W. Walukiewicz, S. X. Li, R. Armitage, J. C. Ho, E. R. Weber, E. E. Haller, Hai Lu, William J. Schaff, A. Barcz, R. Jakiela

Research output: Contribution to journalArticlepeer-review

Abstract

The effects of free electron concentration were analyzed which ranged form 10 17 to 10 20 cm -3. The optical absorption, Hall effect and ion mass spectrometry were used for performing the investigation. The intrinsic band gap of InN of about 0.7 to 1.7 eV was observed for optical absorption edge. The Burstein-Moss shift was used to account electron concentration dependence of optical absorption edge energy. The O and H impurities were not able to fully account for free electron concentration in films which was shown by secondary ion mass spectrometry.

Original languageEnglish
Pages (from-to)2805-2807
Number of pages3
JournalApplied Physics Letters
Volume84
Issue number15
DOIs
Publication statusPublished - Apr 12 2004

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Fingerprint Dive into the research topics of 'Effects of electron concentration on the optical absorption edge of InN'. Together they form a unique fingerprint.

Cite this