Effects of excitation frequency and H2 dilution on cluster generation in silane high-frequency discharges

Masaharu Shiratani, Kazunori Koga, Atsushi Harikai, Takanori Ogata, Yukio Watanabe

Research output: Contribution to journalArticlepeer-review

4 Citations (Scopus)


Reduction of cluster amount in silane discharges is the key to decreasing microstructure parameter Rα of a-Si:H films deposited with the discharges. The cluster amount is found to be reduced more than one order of magnitude using 60 MHz discharges instead of 28 MHz ones or using H2 dilution of an H2/ SiH4 ratio of 5. The cluster-suppressed plasma CVD using 60 MHz discharges realizes deposition of a-Si:H films of Rα∼ 0 at a fairly high rate of 0.55 nm/s. Moreover, a downstream cluster collection method of high sensitivity has been developed for detecting a small amount of clusters formed under deposition conditions of Rα< 0.01.

Original languageEnglish
Pages (from-to)437-442
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Publication statusPublished - Jan 1 2003

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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