Effects of gas flow rate on deposition rate and number of Si clusters incorporated into a-Si:H films

Susumu Toko, Yoshihiro Torigoe, Kimitaka Keya, Hyunwoong Seo, Naho Itagaki, Kazunori Koga, Masaharu Shiratani

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

The suppression of cluster incorporation into a-Si:H films is the key to better film stability, because incorporated clusters contribute to the formation of SiH2 bonds and hence lead to light-induced degradation of the films. To deposit stable a-Si:H solar cells at a high deposition rate (DR), we studied the effects of the gas flow rate on DR and the number of Si clusters incorporated into a-Si:H films with discharge power as a parameter, using a multihollow discharge-plasma chemical vapor deposition method. We succeeded in depositing high-quality a-Si:H films with the incorporation of few clusters at DR of 0.1nm/s. We also found that, under a low gas flow rate and a high discharge power, high-density clusters exist in plasma and hence DR is reduced as a result of radical loss to the clusters.

Original languageEnglish
Article number01AA19
JournalJapanese Journal of Applied Physics
Volume55
Issue number1
DOIs
Publication statusPublished - Jan 1 2016

Fingerprint

Deposition rates
gas flow
Flow of gases
flow velocity
Flow rate
Plasmas
Chemical vapor deposition
Solar cells
Deposits
plasma jets
Degradation
solar cells
deposits
retarding
vapor deposition
degradation

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

Effects of gas flow rate on deposition rate and number of Si clusters incorporated into a-Si:H films. / Toko, Susumu; Torigoe, Yoshihiro; Keya, Kimitaka; Seo, Hyunwoong; Itagaki, Naho; Koga, Kazunori; Shiratani, Masaharu.

In: Japanese Journal of Applied Physics, Vol. 55, No. 1, 01AA19, 01.01.2016.

Research output: Contribution to journalArticle

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