Effects of gas flow ratio on silicon carbide thin film growth mode and polytype formation during gas-source molecular beam epitaxy

Satoru Tanaka, R. Scott Kern, Robert F. Davis

Research output: Contribution to journalArticle

69 Citations (Scopus)

Abstract

Silicon carbide thin films have been grown on vicinal 6H-SiC(0001) substrates by gas-source molecular beam epitaxy at 1050°C. The effect of gas flow ratios (C2H4Si2H6=1,2,10) on the growth mode was examined via cross-sectional high resolution transmission electron microscopy and in situ reflection high energy electron diffraction. Step flow, step bunching, and the deposition of 6H-SiC occurred at the outset of the exposure of the (1×1) surface to the reactants using any flow ratio. Subsequent deposition resulted in step flow and continued growth of 6H films or formation and coalescence of 3C-SiC islands using the gas flow ratio of one of the ethylene-rich ratios, respectively. The (3×3) surface reconstruction observed using the former ratio is believed to enhance the diffusion lengths of the adatoms which, in turn, promotes step flow growth.

Original languageEnglish
Pages (from-to)2851-2853
Number of pages3
JournalApplied Physics Letters
Volume65
Issue number22
DOIs
Publication statusPublished - Dec 1 1994
Externally publishedYes

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silicon carbides
gas flow
molecular beam epitaxy
thin films
gases
bunching
diffusion length
high energy electrons
coalescing
adatoms
ethylene
electron diffraction
transmission electron microscopy
high resolution

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

Effects of gas flow ratio on silicon carbide thin film growth mode and polytype formation during gas-source molecular beam epitaxy. / Tanaka, Satoru; Kern, R. Scott; Davis, Robert F.

In: Applied Physics Letters, Vol. 65, No. 22, 01.12.1994, p. 2851-2853.

Research output: Contribution to journalArticle

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