Effects of gas velocity on deposition rate and amount of cluster incorporation into a-Si:H films fabricated by SiH4 plasma chemical vapor deposition

Takashi Kojima, Susumu Toko, Kazuma Tanaka, Hyunwoong Seo, Naho Itagaki, Kazunori Koga, Masaharu Shiratani

Research output: Contribution to journalArticle

Abstract

To deposit stable a-Si:H films at a high deposition rate (DR), we have studied time evolution of DR and amount of cluster incorporation (R) into films as a parameter of gas velocity, in the downstream region of a multi-hollow discharge plasma chemical vapor deposition reactor; because a-Si:H films containing less cluster incorporation show high stability. For a low gas velocity of 0.18m/s, clusters are trapped between the multihollow electrode and the substrate and the trapped clusters absorb clusters and such absorption suppresses the cluster incorporation into films. By utilizing this phenomenon, we have realized a quite low R = 1.3 at a high DR = 0.06 nm/s.

Original languageEnglish
Article number1406082
JournalPlasma and Fusion Research
Volume13
DOIs
Publication statusPublished - Jan 1 2018

Fingerprint

vapor deposition
gases
plasma jets
hollow
deposits
reactors
electrodes

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics

Cite this

Effects of gas velocity on deposition rate and amount of cluster incorporation into a-Si:H films fabricated by SiH4 plasma chemical vapor deposition. / Kojima, Takashi; Toko, Susumu; Tanaka, Kazuma; Seo, Hyunwoong; Itagaki, Naho; Koga, Kazunori; Shiratani, Masaharu.

In: Plasma and Fusion Research, Vol. 13, 1406082, 01.01.2018.

Research output: Contribution to journalArticle

@article{acc1de4d7db644d48f2d250a7386fe9b,
title = "Effects of gas velocity on deposition rate and amount of cluster incorporation into a-Si:H films fabricated by SiH4 plasma chemical vapor deposition",
abstract = "To deposit stable a-Si:H films at a high deposition rate (DR), we have studied time evolution of DR and amount of cluster incorporation (R) into films as a parameter of gas velocity, in the downstream region of a multi-hollow discharge plasma chemical vapor deposition reactor; because a-Si:H films containing less cluster incorporation show high stability. For a low gas velocity of 0.18m/s, clusters are trapped between the multihollow electrode and the substrate and the trapped clusters absorb clusters and such absorption suppresses the cluster incorporation into films. By utilizing this phenomenon, we have realized a quite low R = 1.3 at a high DR = 0.06 nm/s.",
author = "Takashi Kojima and Susumu Toko and Kazuma Tanaka and Hyunwoong Seo and Naho Itagaki and Kazunori Koga and Masaharu Shiratani",
year = "2018",
month = "1",
day = "1",
doi = "10.1585/PFR.13.1406082",
language = "English",
volume = "13",
journal = "Plasma and Fusion Research",
issn = "1880-6821",
publisher = "The Japan Society of Plasma Science and Nuclear Fusion Research (JSPF)",

}

TY - JOUR

T1 - Effects of gas velocity on deposition rate and amount of cluster incorporation into a-Si:H films fabricated by SiH4 plasma chemical vapor deposition

AU - Kojima, Takashi

AU - Toko, Susumu

AU - Tanaka, Kazuma

AU - Seo, Hyunwoong

AU - Itagaki, Naho

AU - Koga, Kazunori

AU - Shiratani, Masaharu

PY - 2018/1/1

Y1 - 2018/1/1

N2 - To deposit stable a-Si:H films at a high deposition rate (DR), we have studied time evolution of DR and amount of cluster incorporation (R) into films as a parameter of gas velocity, in the downstream region of a multi-hollow discharge plasma chemical vapor deposition reactor; because a-Si:H films containing less cluster incorporation show high stability. For a low gas velocity of 0.18m/s, clusters are trapped between the multihollow electrode and the substrate and the trapped clusters absorb clusters and such absorption suppresses the cluster incorporation into films. By utilizing this phenomenon, we have realized a quite low R = 1.3 at a high DR = 0.06 nm/s.

AB - To deposit stable a-Si:H films at a high deposition rate (DR), we have studied time evolution of DR and amount of cluster incorporation (R) into films as a parameter of gas velocity, in the downstream region of a multi-hollow discharge plasma chemical vapor deposition reactor; because a-Si:H films containing less cluster incorporation show high stability. For a low gas velocity of 0.18m/s, clusters are trapped between the multihollow electrode and the substrate and the trapped clusters absorb clusters and such absorption suppresses the cluster incorporation into films. By utilizing this phenomenon, we have realized a quite low R = 1.3 at a high DR = 0.06 nm/s.

UR - http://www.scopus.com/inward/record.url?scp=85070018953&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85070018953&partnerID=8YFLogxK

U2 - 10.1585/PFR.13.1406082

DO - 10.1585/PFR.13.1406082

M3 - Article

AN - SCOPUS:85070018953

VL - 13

JO - Plasma and Fusion Research

JF - Plasma and Fusion Research

SN - 1880-6821

M1 - 1406082

ER -