Effects of hydrogen intercalation on transport properties of quasi-free-standing monolayer graphene

Shinichi Tanabe; Makoto Takamura; Yuichi Harada; Hiroyuki Kageshima; Hiroki Hibino

doi:10.7567/JJAP.53.04EN01

Effects of hydrogen intercalation on transport properties of quasi-free-standing monolayer graphene

Shinichi Tanabe, Makoto Takamura, Yuichi Harada, Hiroyuki Kageshima, Hiroki Hibino

Research output: Contribution to journal › Article › peer-review

20 Citations (Scopus)

Abstract

We report that mobility in quasi-free-standing monolayer graphene grown on SiC(0001), when compared at the same carrier density, depends on the annealing temperature used for hydrogen intercalation. This was verified by measuring mobility in top-gated devices using quasi-freestanding monolayer graphene obtained by annealing at different temperatures. The density of charged impurities varies with annealing temperature, and it influences transport properties. Our systematic investigation shows that annealing temperatures between 700 and 800 °C are optimum for obtaining high-mobility quasi-free-standing monolayer graphene with the lowest number of charged impurities.

Original language	English
Article number	04EN01
Journal	Japanese Journal of Applied Physics
Volume	53
Issue number	4 SPEC. ISSUE
DOIs	https://doi.org/10.7567/JJAP.53.04EN01
Publication status	Published - Apr 2014
Externally published	Yes

All Science Journal Classification (ASJC) codes

Engineering(all)
Physics and Astronomy(all)

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abstract = "We report that mobility in quasi-free-standing monolayer graphene grown on SiC(0001), when compared at the same carrier density, depends on the annealing temperature used for hydrogen intercalation. This was verified by measuring mobility in top-gated devices using quasi-freestanding monolayer graphene obtained by annealing at different temperatures. The density of charged impurities varies with annealing temperature, and it influences transport properties. Our systematic investigation shows that annealing temperatures between 700 and 800 °C are optimum for obtaining high-mobility quasi-free-standing monolayer graphene with the lowest number of charged impurities.",

author = "Shinichi Tanabe and Makoto Takamura and Yuichi Harada and Hiroyuki Kageshima and Hiroki Hibino",

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AU - Tanabe, Shinichi

AU - Takamura, Makoto

AU - Harada, Yuichi

AU - Kageshima, Hiroyuki

AU - Hibino, Hiroki

PY - 2014/4

Y1 - 2014/4

N2 - We report that mobility in quasi-free-standing monolayer graphene grown on SiC(0001), when compared at the same carrier density, depends on the annealing temperature used for hydrogen intercalation. This was verified by measuring mobility in top-gated devices using quasi-freestanding monolayer graphene obtained by annealing at different temperatures. The density of charged impurities varies with annealing temperature, and it influences transport properties. Our systematic investigation shows that annealing temperatures between 700 and 800 °C are optimum for obtaining high-mobility quasi-free-standing monolayer graphene with the lowest number of charged impurities.

AB - We report that mobility in quasi-free-standing monolayer graphene grown on SiC(0001), when compared at the same carrier density, depends on the annealing temperature used for hydrogen intercalation. This was verified by measuring mobility in top-gated devices using quasi-freestanding monolayer graphene obtained by annealing at different temperatures. The density of charged impurities varies with annealing temperature, and it influences transport properties. Our systematic investigation shows that annealing temperatures between 700 and 800 °C are optimum for obtaining high-mobility quasi-free-standing monolayer graphene with the lowest number of charged impurities.

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Effects of hydrogen intercalation on transport properties of quasi-free-standing monolayer graphene

Abstract

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