Abstract
We report that mobility in quasi-free-standing monolayer graphene grown on SiC(0001), when compared at the same carrier density, depends on the annealing temperature used for hydrogen intercalation. This was verified by measuring mobility in top-gated devices using quasi-freestanding monolayer graphene obtained by annealing at different temperatures. The density of charged impurities varies with annealing temperature, and it influences transport properties. Our systematic investigation shows that annealing temperatures between 700 and 800 °C are optimum for obtaining high-mobility quasi-free-standing monolayer graphene with the lowest number of charged impurities.
| Original language | English |
|---|---|
| Article number | 04EN01 |
| Journal | Japanese Journal of Applied Physics |
| Volume | 53 |
| Issue number | 4 SPEC. ISSUE |
| DOIs | |
| Publication status | Published - Jan 1 2014 |
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All Science Journal Classification (ASJC) codes
- Engineering(all)
- Physics and Astronomy(all)
Cite this
Effects of hydrogen intercalation on transport properties of quasi-free-standing monolayer graphene. / Tanabe, Shinichi; Takamura, Makoto; Harada, Yuichi; Kageshima, Hiroyuki; Hibino, Hiroki.
In: Japanese Journal of Applied Physics, Vol. 53, No. 4 SPEC. ISSUE, 04EN01, 01.01.2014.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Effects of hydrogen intercalation on transport properties of quasi-free-standing monolayer graphene
AU - Tanabe, Shinichi
AU - Takamura, Makoto
AU - Harada, Yuichi
AU - Kageshima, Hiroyuki
AU - Hibino, Hiroki
PY - 2014/1/1
Y1 - 2014/1/1
N2 - We report that mobility in quasi-free-standing monolayer graphene grown on SiC(0001), when compared at the same carrier density, depends on the annealing temperature used for hydrogen intercalation. This was verified by measuring mobility in top-gated devices using quasi-freestanding monolayer graphene obtained by annealing at different temperatures. The density of charged impurities varies with annealing temperature, and it influences transport properties. Our systematic investigation shows that annealing temperatures between 700 and 800 °C are optimum for obtaining high-mobility quasi-free-standing monolayer graphene with the lowest number of charged impurities.
AB - We report that mobility in quasi-free-standing monolayer graphene grown on SiC(0001), when compared at the same carrier density, depends on the annealing temperature used for hydrogen intercalation. This was verified by measuring mobility in top-gated devices using quasi-freestanding monolayer graphene obtained by annealing at different temperatures. The density of charged impurities varies with annealing temperature, and it influences transport properties. Our systematic investigation shows that annealing temperatures between 700 and 800 °C are optimum for obtaining high-mobility quasi-free-standing monolayer graphene with the lowest number of charged impurities.
UR - http://www.scopus.com/inward/record.url?scp=84903275337&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84903275337&partnerID=8YFLogxK
U2 - 10.7567/JJAP.53.04EN01
DO - 10.7567/JJAP.53.04EN01
M3 - Article
AN - SCOPUS:84903275337
VL - 53
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
SN - 0021-4922
IS - 4 SPEC. ISSUE
M1 - 04EN01
ER -