Abstract
We report that mobility in quasi-free-standing monolayer graphene grown on SiC(0001), when compared at the same carrier density, depends on the annealing temperature used for hydrogen intercalation. This was verified by measuring mobility in top-gated devices using quasi-freestanding monolayer graphene obtained by annealing at different temperatures. The density of charged impurities varies with annealing temperature, and it influences transport properties. Our systematic investigation shows that annealing temperatures between 700 and 800 °C are optimum for obtaining high-mobility quasi-free-standing monolayer graphene with the lowest number of charged impurities.
| Original language | English |
|---|---|
| Article number | 04EN01 |
| Journal | Japanese Journal of Applied Physics |
| Volume | 53 |
| Issue number | 4 SPEC. ISSUE |
| DOIs | |
| Publication status | Published - Apr 2014 |
| Externally published | Yes |
All Science Journal Classification (ASJC) codes
- Engineering(all)
- Physics and Astronomy(all)
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Tanabe, S., Takamura, M., Harada, Y., Kageshima, H., & Hibino, H. (2014). Effects of hydrogen intercalation on transport properties of quasi-free-standing monolayer graphene. Japanese Journal of Applied Physics, 53(4 SPEC. ISSUE), [04EN01]. https://doi.org/10.7567/JJAP.53.04EN01