Effects of hydrogen intercalation on transport properties of quasi-free-standing monolayer graphene

Shinichi Tanabe, Makoto Takamura, Yuichi Harada, Hiroyuki Kageshima, Hiroki Hibino

Research output: Contribution to journalArticle

14 Citations (Scopus)

Abstract

We report that mobility in quasi-free-standing monolayer graphene grown on SiC(0001), when compared at the same carrier density, depends on the annealing temperature used for hydrogen intercalation. This was verified by measuring mobility in top-gated devices using quasi-freestanding monolayer graphene obtained by annealing at different temperatures. The density of charged impurities varies with annealing temperature, and it influences transport properties. Our systematic investigation shows that annealing temperatures between 700 and 800 °C are optimum for obtaining high-mobility quasi-free-standing monolayer graphene with the lowest number of charged impurities.

Original languageEnglish
Article number04EN01
JournalJapanese Journal of Applied Physics
Volume53
Issue number4 SPEC. ISSUE
DOIs
Publication statusPublished - Jan 1 2014
Externally publishedYes

Fingerprint

Intercalation
intercalation
Transport properties
Graphene
Monolayers
graphene
transport properties
Annealing
Hydrogen
annealing
hydrogen
Impurities
impurities
Temperature
temperature
Carrier concentration

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

Effects of hydrogen intercalation on transport properties of quasi-free-standing monolayer graphene. / Tanabe, Shinichi; Takamura, Makoto; Harada, Yuichi; Kageshima, Hiroyuki; Hibino, Hiroki.

In: Japanese Journal of Applied Physics, Vol. 53, No. 4 SPEC. ISSUE, 04EN01, 01.01.2014.

Research output: Contribution to journalArticle

Tanabe, Shinichi ; Takamura, Makoto ; Harada, Yuichi ; Kageshima, Hiroyuki ; Hibino, Hiroki. / Effects of hydrogen intercalation on transport properties of quasi-free-standing monolayer graphene. In: Japanese Journal of Applied Physics. 2014 ; Vol. 53, No. 4 SPEC. ISSUE.
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