Effects of hydrogen passivation on near-infrared photodetection of n-type β-FeSi2/p-type si heterojunction photodiodes

Nathaporn Promros, Kyohei Yamashita, Ryuhei Iwasaki, Tsuyoshi Yoshitake

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    Abstract

    Hydrogen passivation was applied to the initial epitaxial growth of n-typeβ-FeSi2 thin films on p-type Si(111) substrates. Such passivation was applied at different gas inflow H2/Ar ratios ranging from 0 to 1.0. The photodetection performance of the photodiode fabricated at the optimum ratio of 0.2 was markedly improved as compared with those of the other samples. The quantum efficiency and detectivity were 2.08% and 5.40×109 cm Hz1=2/W-1, respectively. The enhanced photodetective performance should be mainly because dangling bonds that act as trap centers for photocarriers are effectively inactivated by the passivation.

    Original languageEnglish
    Article number108006
    JournalJapanese Journal of Applied Physics
    Volume51
    Issue number10
    DOIs
    Publication statusPublished - Oct 2012

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    All Science Journal Classification (ASJC) codes

    • Engineering(all)
    • Physics and Astronomy(all)

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