Abstract
Photoluminescence study has been carried out on porous Si which has been prepared from p-type Si wafers either by anodization under light illumination (photoanodization) or by anodization in the dark. It has been found that the photoanodization makes the luminescence peak wavelength shorter and the luminescence intensity stronger. As a result of these effects, visible red light luminescence has been reproducibly obtained. These effects have been found to be more pronounced when highly concentrated HF solutions are used for anodization. Scanning electron microscopy and Raman spectroscopy showed no distinct differences in microstructure or crystallinity between the photoanodized and in-dark anodized porous Si.
| Original language | English |
|---|---|
| Pages (from-to) | L373-L375 |
| Journal | Japanese Journal of Applied Physics |
| Volume | 31 |
| Issue number | 4 |
| DOIs | |
| Publication status | Published - Apr 1992 |
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All Science Journal Classification (ASJC) codes
- Engineering(all)
- Physics and Astronomy(all)
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Effects of Light Exposure during Anodization on Photoluminescence of Porous Si. / Asano, Tanemasa; Tonouchi, Masayoshi; Miyasato, Tatsuro; Higa, Katsuya; Aoki, Satoshi.
In: Japanese Journal of Applied Physics, Vol. 31, No. 4, 04.1992, p. L373-L375.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Effects of Light Exposure during Anodization on Photoluminescence of Porous Si
AU - Asano, Tanemasa
AU - Tonouchi, Masayoshi
AU - Miyasato, Tatsuro
AU - Higa, Katsuya
AU - Aoki, Satoshi
PY - 1992/4
Y1 - 1992/4
N2 - Photoluminescence study has been carried out on porous Si which has been prepared from p-type Si wafers either by anodization under light illumination (photoanodization) or by anodization in the dark. It has been found that the photoanodization makes the luminescence peak wavelength shorter and the luminescence intensity stronger. As a result of these effects, visible red light luminescence has been reproducibly obtained. These effects have been found to be more pronounced when highly concentrated HF solutions are used for anodization. Scanning electron microscopy and Raman spectroscopy showed no distinct differences in microstructure or crystallinity between the photoanodized and in-dark anodized porous Si.
AB - Photoluminescence study has been carried out on porous Si which has been prepared from p-type Si wafers either by anodization under light illumination (photoanodization) or by anodization in the dark. It has been found that the photoanodization makes the luminescence peak wavelength shorter and the luminescence intensity stronger. As a result of these effects, visible red light luminescence has been reproducibly obtained. These effects have been found to be more pronounced when highly concentrated HF solutions are used for anodization. Scanning electron microscopy and Raman spectroscopy showed no distinct differences in microstructure or crystallinity between the photoanodized and in-dark anodized porous Si.
UR - http://www.scopus.com/inward/record.url?scp=0026853847&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0026853847&partnerID=8YFLogxK
U2 - 10.1143/JJAP.31.L373
DO - 10.1143/JJAP.31.L373
M3 - Article
AN - SCOPUS:0026853847
VL - 31
SP - L373-L375
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
SN - 0021-4922
IS - 4
ER -