Effects of Light Exposure during Anodization on Photoluminescence of Porous Si

Tanemasa Asano, Masayoshi Tonouchi, Tatsuro Miyasato, Katsuya Higa, Satoshi Aoki

Research output: Contribution to journalArticle

19 Citations (Scopus)

Abstract

Photoluminescence study has been carried out on porous Si which has been prepared from p-type Si wafers either by anodization under light illumination (photoanodization) or by anodization in the dark. It has been found that the photoanodization makes the luminescence peak wavelength shorter and the luminescence intensity stronger. As a result of these effects, visible red light luminescence has been reproducibly obtained. These effects have been found to be more pronounced when highly concentrated HF solutions are used for anodization. Scanning electron microscopy and Raman spectroscopy showed no distinct differences in microstructure or crystallinity between the photoanodized and in-dark anodized porous Si.

Original languageEnglish
Pages (from-to)L373-L375
JournalJapanese Journal of Applied Physics
Volume31
Issue number4
DOIs
Publication statusPublished - Apr 1992

Fingerprint

Luminescence
Photoluminescence
luminescence
photoluminescence
Raman spectroscopy
crystallinity
Lighting
illumination
wafers
Wavelength
microstructure
Microstructure
Scanning electron microscopy
scanning electron microscopy
wavelengths
spectroscopy

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

Effects of Light Exposure during Anodization on Photoluminescence of Porous Si. / Asano, Tanemasa; Tonouchi, Masayoshi; Miyasato, Tatsuro; Higa, Katsuya; Aoki, Satoshi.

In: Japanese Journal of Applied Physics, Vol. 31, No. 4, 04.1992, p. L373-L375.

Research output: Contribution to journalArticle

Asano, Tanemasa ; Tonouchi, Masayoshi ; Miyasato, Tatsuro ; Higa, Katsuya ; Aoki, Satoshi. / Effects of Light Exposure during Anodization on Photoluminescence of Porous Si. In: Japanese Journal of Applied Physics. 1992 ; Vol. 31, No. 4. pp. L373-L375.
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