Effects of low-frequency modulation on rf discharge chemical vapor deposition

Yukio Watanabe, Masaharu Shiratani, Y. Kubo, I. Ogawa, S. Ogi

Research output: Contribution to journalArticle

159 Citations (Scopus)

Abstract

Low-frequency square-wave modulation of a rf discharge in silane diluted with a rare gas brought about an improvement in the deposition rate of amorphous hydrogenated silicon films and in the film quality as well as a drastic suppression of powder concentration in the discharge space. These results can be explained by a SiH3 density in the modulated discharge that is high compared to that without modulation, because of the electron density enhancement resulting from the modulation and also because the lifetime of SiH3 radicals is much longer than those of SiHn radicals (n=0-2).

Original languageEnglish
Pages (from-to)1263-1265
Number of pages3
JournalApplied Physics Letters
Volume53
Issue number14
DOIs
Publication statusPublished - Dec 1 1988

Fingerprint

frequency modulation
vapor deposition
low frequencies
modulation
square waves
silicon films
silanes
amorphous silicon
rare gases
retarding
life (durability)
augmentation

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

Effects of low-frequency modulation on rf discharge chemical vapor deposition. / Watanabe, Yukio; Shiratani, Masaharu; Kubo, Y.; Ogawa, I.; Ogi, S.

In: Applied Physics Letters, Vol. 53, No. 14, 01.12.1988, p. 1263-1265.

Research output: Contribution to journalArticle

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