TY - JOUR
T1 - Effects of Mg dopant in Al-composition-graded AlxGa1-xN (0.45 ≤ x) on vertical electrical conductivity of ultrawide bandgap AlGaN p-n junction
AU - Sato, Kosuke
AU - Yamada, Kazuki
AU - Sakowski, Konrad
AU - Iwaya, Motoaki
AU - Takeuchi, Tetsuya
AU - Kamiyama, Satoshi
AU - Kangawa, Yoshihiro
AU - Kempisty, Pawel Tomasz
AU - Krukowski, Stanislaw
AU - Piechota, Jacek
AU - Akasaki, Isamu
N1 - Funding Information:
This work was supported by the MEXT Private University Research Branding Project (2016-2020), JSPS KAKENHI for Scientific Research A [17H01055], JSPS KAKENHI for Innovative Areas [16H06415, 16H06416], and JST CREST [16815710] and National Science Centre (Poland) [DEC-2016/21/B/ST1/00350].
Publisher Copyright:
© 2021 The Japan Society of Applied Physics.
PY - 2021/9
Y1 - 2021/9
N2 - A vertical electrical conductivity of an ultrawide bandgap AlGaN p-n junction with Al-composition-graded AlxGa1-xN (0.45 ≤ x) p-type layer was systematically investigated via experiments and numerical simulation. The experimental results revealed that the initial Al composition of the Al-composition-graded AlGaN should be sufficiently high without Mg dopants to generate enough holes by polarization-induced doping even though the bandgap is higher than that of conventional bulk p-AlGaN. The mechanism behind the vertical conduction is investigated by the simulation, which shows that three-dimensional hole gas formed by the polarization is compensated with electrons generated by unintentionally formed donors.
AB - A vertical electrical conductivity of an ultrawide bandgap AlGaN p-n junction with Al-composition-graded AlxGa1-xN (0.45 ≤ x) p-type layer was systematically investigated via experiments and numerical simulation. The experimental results revealed that the initial Al composition of the Al-composition-graded AlGaN should be sufficiently high without Mg dopants to generate enough holes by polarization-induced doping even though the bandgap is higher than that of conventional bulk p-AlGaN. The mechanism behind the vertical conduction is investigated by the simulation, which shows that three-dimensional hole gas formed by the polarization is compensated with electrons generated by unintentionally formed donors.
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U2 - 10.35848/1882-0786/ac1d64
DO - 10.35848/1882-0786/ac1d64
M3 - Article
AN - SCOPUS:85114701112
VL - 14
JO - Applied Physics Express
JF - Applied Physics Express
SN - 1882-0778
IS - 9
M1 - 096503
ER -