Effects of Mg dopant in Al-composition-graded AlxGa1-xN (0.45 ≤ x) on vertical electrical conductivity of ultrawide bandgap AlGaN p-n junction

Kosuke Sato, Kazuki Yamada, Konrad Sakowski, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama, Yoshihiro Kangawa, Pawel Tomasz Kempisty, Stanislaw Krukowski, Jacek Piechota, Isamu Akasaki

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Abstract

A vertical electrical conductivity of an ultrawide bandgap AlGaN p-n junction with Al-composition-graded AlxGa1-xN (0.45 ≤ x) p-type layer was systematically investigated via experiments and numerical simulation. The experimental results revealed that the initial Al composition of the Al-composition-graded AlGaN should be sufficiently high without Mg dopants to generate enough holes by polarization-induced doping even though the bandgap is higher than that of conventional bulk p-AlGaN. The mechanism behind the vertical conduction is investigated by the simulation, which shows that three-dimensional hole gas formed by the polarization is compensated with electrons generated by unintentionally formed donors.

Original languageEnglish
Article number096503
JournalApplied Physics Express
Volume14
Issue number9
DOIs
Publication statusPublished - Sep 2021

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

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