By a small amount of phosphorus addition, the interstitial loop density and its temperature dependence, which were not changed when Ni content was changed over the wide range, were drastically increased at the relatively lower temperatures (approx. 573 K) where the effect of long range migration is negligibly small. This indicates that the addition of phosphorus influences mainly the nucleation of interstitial loops. Moreover, based on the interstitial migration energy of 0. 9 eV, the binding energy between vacancy and phosphorus was estimated to be 0. 5 eV. On the other hand, at higher temperatures, the peak temperatures for the void swelling and the density of the vacancy loop shifted upward by 100 K. Moreover, solute (Ni) segregation to the void surface and the grain boundary is suppressed by phosphorus addition. Such phenomena are thought to be the result of vacancy-phosphorus interactions.
|Number of pages||10|
|Journal||Nippon Kinzoku Gakkaishi/Journal of the Japan Institute of Metals|
|Publication status||Published - Jun 1988|
All Science Journal Classification (ASJC) codes