Abstract
Effects of surface morphology of buffer layers on ZnO/sapphire heteroepitaxial growth have been investigated by means of "nitrogen mediated crystallization (NMC) method", where the crystal nucleation and growth are controlled by absorbed nitrogen atoms. We found a strong correlation between the height distribution profile of NMC-ZnO buffer layers and the crystal quality of ZnO films. On the buffer layer with a sharp peak in height distribution, a single-crystalline ZnO film with atomically-flat surface was grown. Our results indicate that homogeneous and high-density nucleation at the initial growth stages is critical in heteroepitaxy of ZnO on lattice mismatched substrates.
Original language | English |
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Pages (from-to) | 41-46 |
Number of pages | 6 |
Journal | Materials Research Society Symposium Proceedings |
Volume | 1741 |
Issue number | January |
DOIs | |
Publication status | Published - 2015 |
Event | 2014 MRS Fall Meeting - Boston, United States Duration: Nov 30 2014 → Dec 5 2014 |
All Science Journal Classification (ASJC) codes
- Materials Science(all)
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering