Abstract
Effects of surface morphology of buffer layers on ZnO/sapphire heteroepitaxial growth have been investigated by means of "nitrogen mediated crystallization (NMC) method", where the crystal nucleation and growth are controlled by absorbed nitrogen atoms. We found a strong correlation between the height distribution profile of NMC-ZnO buffer layers and the crystal quality of ZnO films. On the buffer layer with a sharp peak in height distribution, a single-crystalline ZnO film with atomically-flat surface was grown. Our results indicate that homogeneous and high-density nucleation at the initial growth stages is critical in heteroepitaxy of ZnO on lattice mismatched substrates.
| Original language | English |
|---|---|
| Pages (from-to) | 41-46 |
| Number of pages | 6 |
| Journal | Materials Research Society Symposium Proceedings |
| Volume | 1741 |
| Issue number | January |
| DOIs | |
| Publication status | Published - Jan 1 2015 |
| Event | 2014 MRS Fall Meeting - Boston, United States Duration: Nov 30 2014 → Dec 5 2014 |
All Science Journal Classification (ASJC) codes
- Materials Science(all)
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering
Fingerprint Dive into the research topics of 'Effects of morphology of buffer layers on ZnO/sapphire heteroepitaxial growth by RF magnetron sputtering'. Together they form a unique fingerprint.
Cite this
Ide, T., Matsushima, K., Shimizu, R., Yamashita, D., Seo, H., Koga, K., Shiratani, M., & Itagaki, N. (2015). Effects of morphology of buffer layers on ZnO/sapphire heteroepitaxial growth by RF magnetron sputtering. Materials Research Society Symposium Proceedings, 1741(January), 41-46. https://doi.org/10.1557/opl.2015.87