Effects of morphology of buffer layers on ZnO/sapphire heteroepitaxial growth by RF magnetron sputtering

Tomoaki Ide, Koichi Matsushima, Ryota Shimizu, Daisuke Yamashita, Hyunwoong Seo, Kazunori Koga, Masaharu Shiratani, Naho Itagaki

Research output: Contribution to journalConference article

2 Citations (Scopus)

Abstract

Effects of surface morphology of buffer layers on ZnO/sapphire heteroepitaxial growth have been investigated by means of "nitrogen mediated crystallization (NMC) method", where the crystal nucleation and growth are controlled by absorbed nitrogen atoms. We found a strong correlation between the height distribution profile of NMC-ZnO buffer layers and the crystal quality of ZnO films. On the buffer layer with a sharp peak in height distribution, a single-crystalline ZnO film with atomically-flat surface was grown. Our results indicate that homogeneous and high-density nucleation at the initial growth stages is critical in heteroepitaxy of ZnO on lattice mismatched substrates.

Original languageEnglish
Pages (from-to)41-46
Number of pages6
JournalMaterials Research Society Symposium Proceedings
Volume1741
Issue numberJanuary
DOIs
Publication statusPublished - Jan 1 2015
Event2014 MRS Fall Meeting - Boston, United States
Duration: Nov 30 2014Dec 5 2014

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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