Effects of morphology of buffer layers on ZnO/sapphire heteroepitaxial growth by RF magnetron sputtering

Tomoaki Ide, Koichi Matsushima, Ryota Shimizu, Daisuke Yamashita, Hyunwoong Seo, Kazunori Koga, Masaharu Shiratani, Naho Itagaki

Research output: Contribution to journalConference article

Abstract

Effects of surface morphology of buffer layers on ZnO/sapphire heteroepitaxial growth have been investigated by means of "nitrogen mediated crystallization (NMC) method", where the crystal nucleation and growth are controlled by absorbed nitrogen atoms. We found a strong correlation between the height distribution profile of NMC-ZnO buffer layers and the crystal quality of ZnO films. On the buffer layer with a sharp peak in height distribution, a single-crystalline ZnO film with atomically-flat surface was grown. Our results indicate that homogeneous and high-density nucleation at the initial growth stages is critical in heteroepitaxy of ZnO on lattice mismatched substrates.

Original languageEnglish
Pages (from-to)41-46
Number of pages6
JournalMaterials Research Society Symposium Proceedings
Volume1741
Issue numberJanuary
DOIs
Publication statusPublished - Jan 1 2015
Event2014 MRS Fall Meeting - Boston, United States
Duration: Nov 30 2014Dec 5 2014

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Aluminum Oxide
Buffer layers
Epitaxial growth
Sapphire
Magnetron sputtering
magnetron sputtering
sapphire
Nitrogen
buffers
Crystallization
Nucleation
nucleation
crystallization
nitrogen
Crystals
Crystal lattices
nitrogen atoms
crystals
Surface morphology
flat surfaces

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Effects of morphology of buffer layers on ZnO/sapphire heteroepitaxial growth by RF magnetron sputtering. / Ide, Tomoaki; Matsushima, Koichi; Shimizu, Ryota; Yamashita, Daisuke; Seo, Hyunwoong; Koga, Kazunori; Shiratani, Masaharu; Itagaki, Naho.

In: Materials Research Society Symposium Proceedings, Vol. 1741, No. January, 01.01.2015, p. 41-46.

Research output: Contribution to journalConference article

Ide, Tomoaki ; Matsushima, Koichi ; Shimizu, Ryota ; Yamashita, Daisuke ; Seo, Hyunwoong ; Koga, Kazunori ; Shiratani, Masaharu ; Itagaki, Naho. / Effects of morphology of buffer layers on ZnO/sapphire heteroepitaxial growth by RF magnetron sputtering. In: Materials Research Society Symposium Proceedings. 2015 ; Vol. 1741, No. January. pp. 41-46.
@article{9b1f083b414544af8302eb46a118f5e2,
title = "Effects of morphology of buffer layers on ZnO/sapphire heteroepitaxial growth by RF magnetron sputtering",
abstract = "Effects of surface morphology of buffer layers on ZnO/sapphire heteroepitaxial growth have been investigated by means of {"}nitrogen mediated crystallization (NMC) method{"}, where the crystal nucleation and growth are controlled by absorbed nitrogen atoms. We found a strong correlation between the height distribution profile of NMC-ZnO buffer layers and the crystal quality of ZnO films. On the buffer layer with a sharp peak in height distribution, a single-crystalline ZnO film with atomically-flat surface was grown. Our results indicate that homogeneous and high-density nucleation at the initial growth stages is critical in heteroepitaxy of ZnO on lattice mismatched substrates.",
author = "Tomoaki Ide and Koichi Matsushima and Ryota Shimizu and Daisuke Yamashita and Hyunwoong Seo and Kazunori Koga and Masaharu Shiratani and Naho Itagaki",
year = "2015",
month = "1",
day = "1",
doi = "10.1557/opl.2015.87",
language = "English",
volume = "1741",
pages = "41--46",
journal = "Materials Research Society Symposium - Proceedings",
issn = "0272-9172",
publisher = "Materials Research Society",
number = "January",

}

TY - JOUR

T1 - Effects of morphology of buffer layers on ZnO/sapphire heteroepitaxial growth by RF magnetron sputtering

AU - Ide, Tomoaki

AU - Matsushima, Koichi

AU - Shimizu, Ryota

AU - Yamashita, Daisuke

AU - Seo, Hyunwoong

AU - Koga, Kazunori

AU - Shiratani, Masaharu

AU - Itagaki, Naho

PY - 2015/1/1

Y1 - 2015/1/1

N2 - Effects of surface morphology of buffer layers on ZnO/sapphire heteroepitaxial growth have been investigated by means of "nitrogen mediated crystallization (NMC) method", where the crystal nucleation and growth are controlled by absorbed nitrogen atoms. We found a strong correlation between the height distribution profile of NMC-ZnO buffer layers and the crystal quality of ZnO films. On the buffer layer with a sharp peak in height distribution, a single-crystalline ZnO film with atomically-flat surface was grown. Our results indicate that homogeneous and high-density nucleation at the initial growth stages is critical in heteroepitaxy of ZnO on lattice mismatched substrates.

AB - Effects of surface morphology of buffer layers on ZnO/sapphire heteroepitaxial growth have been investigated by means of "nitrogen mediated crystallization (NMC) method", where the crystal nucleation and growth are controlled by absorbed nitrogen atoms. We found a strong correlation between the height distribution profile of NMC-ZnO buffer layers and the crystal quality of ZnO films. On the buffer layer with a sharp peak in height distribution, a single-crystalline ZnO film with atomically-flat surface was grown. Our results indicate that homogeneous and high-density nucleation at the initial growth stages is critical in heteroepitaxy of ZnO on lattice mismatched substrates.

UR - http://www.scopus.com/inward/record.url?scp=84938401593&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84938401593&partnerID=8YFLogxK

U2 - 10.1557/opl.2015.87

DO - 10.1557/opl.2015.87

M3 - Conference article

AN - SCOPUS:84938401593

VL - 1741

SP - 41

EP - 46

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

SN - 0272-9172

IS - January

ER -