Abstract
Effects of surface morphology of buffer layers on ZnO/sapphire heteroepitaxial growth have been investigated by means of "nitrogen mediated crystallization (NMC) method", where the crystal nucleation and growth are controlled by absorbed nitrogen atoms. We found a strong correlation between the height distribution profile of NMC-ZnO buffer layers and the crystal quality of ZnO films. On the buffer layer with a sharp peak in height distribution, a single-crystalline ZnO film with atomically-flat surface was grown. Our results indicate that homogeneous and high-density nucleation at the initial growth stages is critical in heteroepitaxy of ZnO on lattice mismatched substrates.
| Original language | English |
|---|---|
| Pages (from-to) | 41-46 |
| Number of pages | 6 |
| Journal | Materials Research Society Symposium Proceedings |
| Volume | 1741 |
| Issue number | January |
| DOIs | |
| Publication status | Published - Jan 1 2015 |
| Event | 2014 MRS Fall Meeting - Boston, United States Duration: Nov 30 2014 → Dec 5 2014 |
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All Science Journal Classification (ASJC) codes
- Materials Science(all)
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering
Cite this
Effects of morphology of buffer layers on ZnO/sapphire heteroepitaxial growth by RF magnetron sputtering. / Ide, Tomoaki; Matsushima, Koichi; Shimizu, Ryota; Yamashita, Daisuke; Seo, Hyunwoong; Koga, Kazunori; Shiratani, Masaharu; Itagaki, Naho.
In: Materials Research Society Symposium Proceedings, Vol. 1741, No. January, 01.01.2015, p. 41-46.Research output: Contribution to journal › Conference article
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TY - JOUR
T1 - Effects of morphology of buffer layers on ZnO/sapphire heteroepitaxial growth by RF magnetron sputtering
AU - Ide, Tomoaki
AU - Matsushima, Koichi
AU - Shimizu, Ryota
AU - Yamashita, Daisuke
AU - Seo, Hyunwoong
AU - Koga, Kazunori
AU - Shiratani, Masaharu
AU - Itagaki, Naho
PY - 2015/1/1
Y1 - 2015/1/1
N2 - Effects of surface morphology of buffer layers on ZnO/sapphire heteroepitaxial growth have been investigated by means of "nitrogen mediated crystallization (NMC) method", where the crystal nucleation and growth are controlled by absorbed nitrogen atoms. We found a strong correlation between the height distribution profile of NMC-ZnO buffer layers and the crystal quality of ZnO films. On the buffer layer with a sharp peak in height distribution, a single-crystalline ZnO film with atomically-flat surface was grown. Our results indicate that homogeneous and high-density nucleation at the initial growth stages is critical in heteroepitaxy of ZnO on lattice mismatched substrates.
AB - Effects of surface morphology of buffer layers on ZnO/sapphire heteroepitaxial growth have been investigated by means of "nitrogen mediated crystallization (NMC) method", where the crystal nucleation and growth are controlled by absorbed nitrogen atoms. We found a strong correlation between the height distribution profile of NMC-ZnO buffer layers and the crystal quality of ZnO films. On the buffer layer with a sharp peak in height distribution, a single-crystalline ZnO film with atomically-flat surface was grown. Our results indicate that homogeneous and high-density nucleation at the initial growth stages is critical in heteroepitaxy of ZnO on lattice mismatched substrates.
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UR - http://www.scopus.com/inward/citedby.url?scp=84938401593&partnerID=8YFLogxK
U2 - 10.1557/opl.2015.87
DO - 10.1557/opl.2015.87
M3 - Conference article
AN - SCOPUS:84938401593
VL - 1741
SP - 41
EP - 46
JO - Materials Research Society Symposium - Proceedings
JF - Materials Research Society Symposium - Proceedings
SN - 0272-9172
IS - January
ER -