Effects of nitrogen doping on the electrical conductivity and optical absorption of ultrananocrystalline diamond/hydrogenated amorphous carbon films prepared by coaxial arc plasma deposition

Abdelrahman Zkria, Yuki Katamune, Tsuyoshi Yoshitake

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    4 Citations (Scopus)

    Abstract

    3 at. % nitrogen-doped ultrananocrystalline diamond/hydrogenated amorphous carbon composite (UNCD/a-C:H) films were synthesized by coaxial arc plasma deposition. Optically, the films possess large absorption coefficients of more than 105 cm-1 at photon energies from 3 to 5 eV. The optical band gap was estimated to be 1.28 eV. This value is smaller than that of undoped films, which might be attributable to increased sp2 fractions. The temperature dependence of the electrical conductivity implies that carrier transport follows a hopping conduction model. Heterojunctions with p-type Si substrates exhibited a typical rectifying action. From the capacitance-voltage characteristics that evidently indicated the expansion of a depletion region into the film side, the built-in potential and carrier concentration were estimated to be 0.51 eV and 7.5 × 1016 cm-3, respectively. It was experimentally demonstrated that nitrogen-doped UNCD/a-C:H films are applicable as an n-type semiconductor.

    Original languageEnglish
    Article number07LE01
    JournalJapanese Journal of Applied Physics
    Volume55
    Issue number7S2
    DOIs
    Publication statusPublished - Jan 1 2016

    Fingerprint

    Plasma deposition
    Carbon films
    Amorphous carbon
    Amorphous films
    plasma jets
    Light absorption
    Diamonds
    optical absorption
    diamonds
    Doping (additives)
    Nitrogen
    nitrogen
    electrical resistivity
    carbon
    n-type semiconductors
    capacitance-voltage characteristics
    Carrier transport
    Optical band gaps
    Carrier concentration
    Heterojunctions

    All Science Journal Classification (ASJC) codes

    • Engineering(all)
    • Physics and Astronomy(all)

    Cite this

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    title = "Effects of nitrogen doping on the electrical conductivity and optical absorption of ultrananocrystalline diamond/hydrogenated amorphous carbon films prepared by coaxial arc plasma deposition",
    abstract = "3 at. {\%} nitrogen-doped ultrananocrystalline diamond/hydrogenated amorphous carbon composite (UNCD/a-C:H) films were synthesized by coaxial arc plasma deposition. Optically, the films possess large absorption coefficients of more than 105 cm-1 at photon energies from 3 to 5 eV. The optical band gap was estimated to be 1.28 eV. This value is smaller than that of undoped films, which might be attributable to increased sp2 fractions. The temperature dependence of the electrical conductivity implies that carrier transport follows a hopping conduction model. Heterojunctions with p-type Si substrates exhibited a typical rectifying action. From the capacitance-voltage characteristics that evidently indicated the expansion of a depletion region into the film side, the built-in potential and carrier concentration were estimated to be 0.51 eV and 7.5 × 1016 cm-3, respectively. It was experimentally demonstrated that nitrogen-doped UNCD/a-C:H films are applicable as an n-type semiconductor.",
    author = "Abdelrahman Zkria and Yuki Katamune and Tsuyoshi Yoshitake",
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    TY - JOUR

    T1 - Effects of nitrogen doping on the electrical conductivity and optical absorption of ultrananocrystalline diamond/hydrogenated amorphous carbon films prepared by coaxial arc plasma deposition

    AU - Zkria, Abdelrahman

    AU - Katamune, Yuki

    AU - Yoshitake, Tsuyoshi

    PY - 2016/1/1

    Y1 - 2016/1/1

    N2 - 3 at. % nitrogen-doped ultrananocrystalline diamond/hydrogenated amorphous carbon composite (UNCD/a-C:H) films were synthesized by coaxial arc plasma deposition. Optically, the films possess large absorption coefficients of more than 105 cm-1 at photon energies from 3 to 5 eV. The optical band gap was estimated to be 1.28 eV. This value is smaller than that of undoped films, which might be attributable to increased sp2 fractions. The temperature dependence of the electrical conductivity implies that carrier transport follows a hopping conduction model. Heterojunctions with p-type Si substrates exhibited a typical rectifying action. From the capacitance-voltage characteristics that evidently indicated the expansion of a depletion region into the film side, the built-in potential and carrier concentration were estimated to be 0.51 eV and 7.5 × 1016 cm-3, respectively. It was experimentally demonstrated that nitrogen-doped UNCD/a-C:H films are applicable as an n-type semiconductor.

    AB - 3 at. % nitrogen-doped ultrananocrystalline diamond/hydrogenated amorphous carbon composite (UNCD/a-C:H) films were synthesized by coaxial arc plasma deposition. Optically, the films possess large absorption coefficients of more than 105 cm-1 at photon energies from 3 to 5 eV. The optical band gap was estimated to be 1.28 eV. This value is smaller than that of undoped films, which might be attributable to increased sp2 fractions. The temperature dependence of the electrical conductivity implies that carrier transport follows a hopping conduction model. Heterojunctions with p-type Si substrates exhibited a typical rectifying action. From the capacitance-voltage characteristics that evidently indicated the expansion of a depletion region into the film side, the built-in potential and carrier concentration were estimated to be 0.51 eV and 7.5 × 1016 cm-3, respectively. It was experimentally demonstrated that nitrogen-doped UNCD/a-C:H films are applicable as an n-type semiconductor.

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