Abstract
We have studied the effects of the N2 gas flow rate on the surface morphology of ZnO films deposited by the sputtering of a ZnO target using Ar/ N2. Height-height correlation function (HHCF) analysis indicates that introducing a small amount of N2 (<5 sccm) to the sputtering atmosphere enhances adatom migration, leading to a larger grain size in the ZnO films associated with an increase in the lateral correlation length. The HHCF analysis also reveals that films deposited with and without N 2 exhibit a self-affine fractal surface structure. We demonstrate that utilizing such ZnO films deposited using Ar/N2 as buffer layers, the crystallinity of ZnO:Al (AZO) films on the buffer layers can be greatly improved. The electrical resistivity of 100-nm-thick AZO films decreases from 1.8 × 10-3 to 4:0 × 10-4 Ω·cm by utilizing a ZnO buffer layers prepared at N2 flow rate of 5 sccm.
| Original language | English |
|---|---|
| Article number | 11NB03 |
| Journal | Japanese Journal of Applied Physics |
| Volume | 52 |
| Issue number | 11 PART 2 |
| DOIs | |
| Publication status | Published - Nov 1 2013 |
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All Science Journal Classification (ASJC) codes
- Engineering(all)
- Physics and Astronomy(all)
Cite this
Effects of nitrogen on crystal growth of sputter-deposited ZnO films for transparent conducting oxide. / Suhariadi, Iping; Oshikawa, Kouichiro; Kuwahara, Kazunari; Matsushima, Kouichi; Yamashita, Daisuke; Uchida, Giichiro; Koga, Kazunori; Shiratani, Masaharu; Itagaki, Naho.
In: Japanese Journal of Applied Physics, Vol. 52, No. 11 PART 2, 11NB03, 01.11.2013.Research output: Contribution to journal › Article
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TY - JOUR
T1 - Effects of nitrogen on crystal growth of sputter-deposited ZnO films for transparent conducting oxide
AU - Suhariadi, Iping
AU - Oshikawa, Kouichiro
AU - Kuwahara, Kazunari
AU - Matsushima, Kouichi
AU - Yamashita, Daisuke
AU - Uchida, Giichiro
AU - Koga, Kazunori
AU - Shiratani, Masaharu
AU - Itagaki, Naho
PY - 2013/11/1
Y1 - 2013/11/1
N2 - We have studied the effects of the N2 gas flow rate on the surface morphology of ZnO films deposited by the sputtering of a ZnO target using Ar/ N2. Height-height correlation function (HHCF) analysis indicates that introducing a small amount of N2 (<5 sccm) to the sputtering atmosphere enhances adatom migration, leading to a larger grain size in the ZnO films associated with an increase in the lateral correlation length. The HHCF analysis also reveals that films deposited with and without N 2 exhibit a self-affine fractal surface structure. We demonstrate that utilizing such ZnO films deposited using Ar/N2 as buffer layers, the crystallinity of ZnO:Al (AZO) films on the buffer layers can be greatly improved. The electrical resistivity of 100-nm-thick AZO films decreases from 1.8 × 10-3 to 4:0 × 10-4 Ω·cm by utilizing a ZnO buffer layers prepared at N2 flow rate of 5 sccm.
AB - We have studied the effects of the N2 gas flow rate on the surface morphology of ZnO films deposited by the sputtering of a ZnO target using Ar/ N2. Height-height correlation function (HHCF) analysis indicates that introducing a small amount of N2 (<5 sccm) to the sputtering atmosphere enhances adatom migration, leading to a larger grain size in the ZnO films associated with an increase in the lateral correlation length. The HHCF analysis also reveals that films deposited with and without N 2 exhibit a self-affine fractal surface structure. We demonstrate that utilizing such ZnO films deposited using Ar/N2 as buffer layers, the crystallinity of ZnO:Al (AZO) films on the buffer layers can be greatly improved. The electrical resistivity of 100-nm-thick AZO films decreases from 1.8 × 10-3 to 4:0 × 10-4 Ω·cm by utilizing a ZnO buffer layers prepared at N2 flow rate of 5 sccm.
UR - http://www.scopus.com/inward/record.url?scp=84889023413&partnerID=8YFLogxK
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U2 - 10.7567/JJAP.52.11NB03
DO - 10.7567/JJAP.52.11NB03
M3 - Article
AN - SCOPUS:84889023413
VL - 52
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
SN - 0021-4922
IS - 11 PART 2
M1 - 11NB03
ER -