Effects of nitrogen on crystal growth of sputter-deposited ZnO films for transparent conducting oxide

Iping Suhariadi; Kouichiro Oshikawa; Kazunari Kuwahara; Kouichi Matsushima; Daisuke Yamashita; Giichiro Uchida; Kazunari Koga; Masaharu Shiratani; Naho Itagaki

doi:10.7567/JJAP.52.11NB03

Effects of nitrogen on crystal growth of sputter-deposited ZnO films for transparent conducting oxide

Iping Suhariadi, Kouichiro Oshikawa, Kazunari Kuwahara, Kouichi Matsushima, Daisuke Yamashita, Giichiro Uchida, Kazunari Koga, Masaharu Shiratani, Naho Itagaki

Electronic Devices

Research output: Contribution to journal › Article › peer-review

13 Citations (Scopus)

Abstract

We have studied the effects of the N₂ gas flow rate on the surface morphology of ZnO films deposited by the sputtering of a ZnO target using Ar/ N₂. Height-height correlation function (HHCF) analysis indicates that introducing a small amount of N₂ (<5 sccm) to the sputtering atmosphere enhances adatom migration, leading to a larger grain size in the ZnO films associated with an increase in the lateral correlation length. The HHCF analysis also reveals that films deposited with and without N ₂ exhibit a self-affine fractal surface structure. We demonstrate that utilizing such ZnO films deposited using Ar/N₂ as buffer layers, the crystallinity of ZnO:Al (AZO) films on the buffer layers can be greatly improved. The electrical resistivity of 100-nm-thick AZO films decreases from 1.8 × 10^-3 to 4:0 × 10^-4 Ω·cm by utilizing a ZnO buffer layers prepared at N₂ flow rate of 5 sccm.

Original language	English
Article number	11NB03
Journal	Japanese journal of applied physics
Volume	52
Issue number	11 PART 2
DOIs	https://doi.org/10.7567/JJAP.52.11NB03
Publication status	Published - Nov 1 2013

All Science Journal Classification (ASJC) codes

Engineering(all)
Physics and Astronomy(all)

Access to Document

10.7567/JJAP.52.11NB03

Fingerprint Dive into the research topics of 'Effects of nitrogen on crystal growth of sputter-deposited ZnO films for transparent conducting oxide'. Together they form a unique fingerprint.

Cite this

Effects of nitrogen on crystal growth of sputter-deposited ZnO films for transparent conducting oxide. / Suhariadi, Iping; Oshikawa, Kouichiro; Kuwahara, Kazunari; Matsushima, Kouichi; Yamashita, Daisuke; Uchida, Giichiro; Koga, Kazunari ; Shiratani, Masaharu ; Itagaki, Naho.

In: Japanese journal of applied physics, Vol. 52, No. 11 PART 2, 11NB03, 01.11.2013.

Research output: Contribution to journal › Article › peer-review

@article{3411e230a9764b54aa24bc4dd914ae03,

title = "Effects of nitrogen on crystal growth of sputter-deposited ZnO films for transparent conducting oxide",

abstract = "We have studied the effects of the N2 gas flow rate on the surface morphology of ZnO films deposited by the sputtering of a ZnO target using Ar/ N2. Height-height correlation function (HHCF) analysis indicates that introducing a small amount of N2 (<5 sccm) to the sputtering atmosphere enhances adatom migration, leading to a larger grain size in the ZnO films associated with an increase in the lateral correlation length. The HHCF analysis also reveals that films deposited with and without N 2 exhibit a self-affine fractal surface structure. We demonstrate that utilizing such ZnO films deposited using Ar/N2 as buffer layers, the crystallinity of ZnO:Al (AZO) films on the buffer layers can be greatly improved. The electrical resistivity of 100-nm-thick AZO films decreases from 1.8 × 10-3 to 4:0 × 10-4 Ω·cm by utilizing a ZnO buffer layers prepared at N2 flow rate of 5 sccm.",

author = "Iping Suhariadi and Kouichiro Oshikawa and Kazunari Kuwahara and Kouichi Matsushima and Daisuke Yamashita and Giichiro Uchida and Kazunari Koga and Masaharu Shiratani and Naho Itagaki",

year = "2013",

month = nov,

day = "1",

doi = "10.7567/JJAP.52.11NB03",

language = "English",

volume = "52",

journal = "Japanese Journal of Applied Physics",

issn = "0021-4922",

publisher = "The Japan Society of Applied Physics",

number = "11 PART 2",

}

TY - JOUR

T1 - Effects of nitrogen on crystal growth of sputter-deposited ZnO films for transparent conducting oxide

AU - Suhariadi, Iping

AU - Oshikawa, Kouichiro

AU - Kuwahara, Kazunari

AU - Matsushima, Kouichi

AU - Yamashita, Daisuke

AU - Uchida, Giichiro

AU - Koga, Kazunari

AU - Shiratani, Masaharu

AU - Itagaki, Naho

PY - 2013/11/1

Y1 - 2013/11/1

N2 - We have studied the effects of the N2 gas flow rate on the surface morphology of ZnO films deposited by the sputtering of a ZnO target using Ar/ N2. Height-height correlation function (HHCF) analysis indicates that introducing a small amount of N2 (<5 sccm) to the sputtering atmosphere enhances adatom migration, leading to a larger grain size in the ZnO films associated with an increase in the lateral correlation length. The HHCF analysis also reveals that films deposited with and without N 2 exhibit a self-affine fractal surface structure. We demonstrate that utilizing such ZnO films deposited using Ar/N2 as buffer layers, the crystallinity of ZnO:Al (AZO) films on the buffer layers can be greatly improved. The electrical resistivity of 100-nm-thick AZO films decreases from 1.8 × 10-3 to 4:0 × 10-4 Ω·cm by utilizing a ZnO buffer layers prepared at N2 flow rate of 5 sccm.

AB - We have studied the effects of the N2 gas flow rate on the surface morphology of ZnO films deposited by the sputtering of a ZnO target using Ar/ N2. Height-height correlation function (HHCF) analysis indicates that introducing a small amount of N2 (<5 sccm) to the sputtering atmosphere enhances adatom migration, leading to a larger grain size in the ZnO films associated with an increase in the lateral correlation length. The HHCF analysis also reveals that films deposited with and without N 2 exhibit a self-affine fractal surface structure. We demonstrate that utilizing such ZnO films deposited using Ar/N2 as buffer layers, the crystallinity of ZnO:Al (AZO) films on the buffer layers can be greatly improved. The electrical resistivity of 100-nm-thick AZO films decreases from 1.8 × 10-3 to 4:0 × 10-4 Ω·cm by utilizing a ZnO buffer layers prepared at N2 flow rate of 5 sccm.

UR - http://www.scopus.com/inward/record.url?scp=84889023413&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84889023413&partnerID=8YFLogxK

U2 - 10.7567/JJAP.52.11NB03

DO - 10.7567/JJAP.52.11NB03

M3 - Article

AN - SCOPUS:84889023413

VL - 52

JO - Japanese Journal of Applied Physics

JF - Japanese Journal of Applied Physics

SN - 0021-4922

IS - 11 PART 2

M1 - 11NB03

ER -