Effects of protium introduction on electrical and optical properties of tin-germanium oxide thin films

Makoto Arita, Hirofumi Konishi, Masataka Masuda, Yasunori Hayashi

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Abstract

Tin-germanium oxide thin films with various Ge/Sn ratios were deposited by RF magnetron sputtering. The electrical and optical properties of these films were investigated. All the as-deposited films were transparent to visible light. No effect was observed by hydrogen ion implantation on the electrical resistivity of the Ge rich (Sn/Ge ≤ 1) films. On the other hand, hydrogen ion implantation improved the conductivity of the Sn rich (Sn/Ge ≥ 4) films. The enhancement of the conductivity would be attributed to the increase in carrier density by protium introductions.

Original languageEnglish
Pages (from-to)2670-2672
Number of pages3
JournalMaterials Transactions
Volume43
Issue number11
DOIs
Publication statusPublished - Nov 2002

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All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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