Effects of protium introduction on electrical and optical properties of tin-germanium oxide thin films

Makoto Arita, Hirofumi Konishi, Masataka Masuda, Yasunori Hayashi

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

Tin-germanium oxide thin films with various Ge/Sn ratios were deposited by RF magnetron sputtering. The electrical and optical properties of these films were investigated. All the as-deposited films were transparent to visible light. No effect was observed by hydrogen ion implantation on the electrical resistivity of the Ge rich (Sn/Ge ≤ 1) films. On the other hand, hydrogen ion implantation improved the conductivity of the Sn rich (Sn/Ge ≥ 4) films. The enhancement of the conductivity would be attributed to the increase in carrier density by protium introductions.

Original languageEnglish
Pages (from-to)2670-2672
Number of pages3
JournalMaterials Transactions
Volume43
Issue number11
DOIs
Publication statusPublished - Jan 1 2002

Fingerprint

Germanium oxides
germanium oxides
light water
Tin
tin oxides
Oxide films
Electric properties
Optical properties
electrical properties
optical properties
Thin films
hydrogen ions
thin films
Ion implantation
ion implantation
Protons
conductivity
Hydrogen
Magnetron sputtering
Carrier concentration

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Effects of protium introduction on electrical and optical properties of tin-germanium oxide thin films. / Arita, Makoto; Konishi, Hirofumi; Masuda, Masataka; Hayashi, Yasunori.

In: Materials Transactions, Vol. 43, No. 11, 01.01.2002, p. 2670-2672.

Research output: Contribution to journalArticle

Arita, Makoto ; Konishi, Hirofumi ; Masuda, Masataka ; Hayashi, Yasunori. / Effects of protium introduction on electrical and optical properties of tin-germanium oxide thin films. In: Materials Transactions. 2002 ; Vol. 43, No. 11. pp. 2670-2672.
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