Effects of rf bias and substrate temperature on Si substrate cleaning using inductively coupled hydrogen plasma

Akihiro Ikeda; Satoru Iwasaki; Hidenori Nagashima; Seiichi Ohta; Keiichi Tsukamoto; Yukinori Kuroki

Effects of rf bias and substrate temperature on Si substrate cleaning using inductively coupled hydrogen plasma

Akihiro Ikeda, Satoru Iwasaki, Hidenori Nagashima, Seiichi Ohta, Keiichi Tsukamoto, Yukinori Kuroki

Integrated Electronic Systems

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Abstract

Effects of rf bias and substrate temperature on Si substrate cleaning using inductively coupled hydrogen plasma have been investigated using ellipsometer, surface profiler and spreading resistance profiler (SRP). Both Si and SiO₂ were not etched, but resist was etched without rf bias. Etching rate of resist was increased with the substrate temperature below 100 °C. On the other hand, Si and SiO₂ had higher etch rate at lower temperature. It is considered that the temperature dependence of Si and SiO₂ etch rate is caused by decrease of adsorbed hydrogen atoms on Si surface. The dependence of the hydrogen penetration on the thickness of thermal SiO₂ on Si under hydrogen ion bombardment effect was investigated. Ordinary rf bias power generated many defects in SiO₂ to the depth of around 1000Å.

Original language	English
Pages (from-to)	138-144
Number of pages	7
Journal	Research Reports on Information Science and Electrical Engineering of Kyushu University
Volume	2
Issue number	1
Publication status	Published - Mar 1 1997

All Science Journal Classification (ASJC) codes

Computer Science(all)
Electrical and Electronic Engineering

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Effects of rf bias and substrate temperature on Si substrate cleaning using inductively coupled hydrogen plasma. / Ikeda, Akihiro; Iwasaki, Satoru; Nagashima, Hidenori et al.

In: Research Reports on Information Science and Electrical Engineering of Kyushu University, Vol. 2, No. 1, 01.03.1997, p. 138-144.

Research output: Contribution to journal › Article › peer-review

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AU - Ohta, Seiichi

AU - Tsukamoto, Keiichi

AU - Kuroki, Yukinori

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N2 - Effects of rf bias and substrate temperature on Si substrate cleaning using inductively coupled hydrogen plasma have been investigated using ellipsometer, surface profiler and spreading resistance profiler (SRP). Both Si and SiO2 were not etched, but resist was etched without rf bias. Etching rate of resist was increased with the substrate temperature below 100 °C. On the other hand, Si and SiO2 had higher etch rate at lower temperature. It is considered that the temperature dependence of Si and SiO2 etch rate is caused by decrease of adsorbed hydrogen atoms on Si surface. The dependence of the hydrogen penetration on the thickness of thermal SiO2 on Si under hydrogen ion bombardment effect was investigated. Ordinary rf bias power generated many defects in SiO2 to the depth of around 1000Å.

AB - Effects of rf bias and substrate temperature on Si substrate cleaning using inductively coupled hydrogen plasma have been investigated using ellipsometer, surface profiler and spreading resistance profiler (SRP). Both Si and SiO2 were not etched, but resist was etched without rf bias. Etching rate of resist was increased with the substrate temperature below 100 °C. On the other hand, Si and SiO2 had higher etch rate at lower temperature. It is considered that the temperature dependence of Si and SiO2 etch rate is caused by decrease of adsorbed hydrogen atoms on Si surface. The dependence of the hydrogen penetration on the thickness of thermal SiO2 on Si under hydrogen ion bombardment effect was investigated. Ordinary rf bias power generated many defects in SiO2 to the depth of around 1000Å.

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Effects of rf bias and substrate temperature on Si substrate cleaning using inductively coupled hydrogen plasma

Abstract

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