Effects of rf bias and substrate temperature on Si substrate cleaning using inductively coupled hydrogen plasma have been investigated using ellipsometer, surface profiler and spreading resistance profiler (SRP). Both Si and SiO2 were not etched, but resist was etched without rf bias. Etching rate of resist was increased with the substrate temperature below 100 °C. On the other hand, Si and SiO2 had higher etch rate at lower temperature. It is considered that the temperature dependence of Si and SiO2 etch rate is caused by decrease of adsorbed hydrogen atoms on Si surface. The dependence of the hydrogen penetration on the thickness of thermal SiO2 on Si under hydrogen ion bombardment effect was investigated. Ordinary rf bias power generated many defects in SiO2 to the depth of around 1000Å.
|Number of pages||7|
|Journal||Research Reports on Information Science and Electrical Engineering of Kyushu University|
|Publication status||Published - Mar 1 1997|
All Science Journal Classification (ASJC) codes
- Computer Science(all)
- Electrical and Electronic Engineering