Effects of rotating magnetic fields on temperature and oxygen distributions in silicon melt

Research output: Contribution to journalArticle

22 Citations (Scopus)

Abstract

A three-dimensional and time-dependent numerical study was carried out to clarify temperature and oxygen distributions in a silicon melt under rotating magnetic fields. Simulations were carried out to study the effects of strength and frequency of rotating magnetic fields on temperature and oxygen distribution in the melt. The results of calculations showed that the flow motion consists of a primary flow in the azimuthal direction and a secondary flow in a meridional plane, which have three-dimensional and time-dependent structures, and that the strength and frequency of the rotating magnetic fields affect the time-dependent structure of the flow. It was found that the secondary flow in a meridional plane enhances heat and impurity transfer from the crucible wall to the solid-liquid interface of silicon through the melt.

Original languageEnglish
Pages (from-to)1785-1790
Number of pages6
JournalJournal of Crystal Growth
Volume237-239
Issue number1-4 III
DOIs
Publication statusPublished - Apr 1 2002

Fingerprint

Silicon
secondary flow
temperature distribution
Secondary flow
Magnetic fields
Oxygen
silicon
oxygen
magnetic fields
Crucibles
crucibles
liquid-solid interfaces
Temperature
heat transfer
Impurities
impurities
Liquids
simulation

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

Cite this

Effects of rotating magnetic fields on temperature and oxygen distributions in silicon melt. / Kakimoto, Koichi.

In: Journal of Crystal Growth, Vol. 237-239, No. 1-4 III, 01.04.2002, p. 1785-1790.

Research output: Contribution to journalArticle

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