Abstract
The effects of amorphous-Si (a-Si) layer (thickness: 0-20 nm) insertion on low-temperature (<450 °C) solid-phase crystallization of a-Ge films (50 nm) were investigated. Upon the insertion of an ultrathin (<3 μm) a-Si layer, incubation time increased and saturated crystallinity slightly increased. On the other hand, upon the insertion of a thick (>10 μm) a-Si layer, incubation time significantly decreased and saturated crystallinity decreased. Grain sizes obtained at 425 °C were ̃200 and ̃50nm upon the insertion of a-Si layers of 3 and 20 nm, respectively, which agrees with the results for saturated crystallinity. Moreover, upon the insertion of an intermediate-thickness (5-7 nm) a- Si layer, the nucleation rate and saturated crystallinity increased. These phenomena were explained on the basis of the Si-concentration profiles at interfaces. Thus, interface modulation is effective for realizing large-grain polycrystalline Ge.
| Original language | English |
|---|---|
| Article number | 03B004 |
| Journal | Japanese Journal of Applied Physics |
| Volume | 48 |
| Issue number | 3 PART 3 |
| DOIs | |
| Publication status | Published - Mar 1 2009 |
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All Science Journal Classification (ASJC) codes
- Engineering(all)
- Physics and Astronomy(all)
Cite this
Effects of Si layer thickness on solid-phase crystallization of stacked Ge/Si/SiO2 structures. / Sadoh, Taizoh; Ohta, Hiroki; Miyao, Masanobu.
In: Japanese Journal of Applied Physics, Vol. 48, No. 3 PART 3, 03B004, 01.03.2009.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Effects of Si layer thickness on solid-phase crystallization of stacked Ge/Si/SiO2 structures
AU - Sadoh, Taizoh
AU - Ohta, Hiroki
AU - Miyao, Masanobu
PY - 2009/3/1
Y1 - 2009/3/1
N2 - The effects of amorphous-Si (a-Si) layer (thickness: 0-20 nm) insertion on low-temperature (<450 °C) solid-phase crystallization of a-Ge films (50 nm) were investigated. Upon the insertion of an ultrathin (<3 μm) a-Si layer, incubation time increased and saturated crystallinity slightly increased. On the other hand, upon the insertion of a thick (>10 μm) a-Si layer, incubation time significantly decreased and saturated crystallinity decreased. Grain sizes obtained at 425 °C were ̃200 and ̃50nm upon the insertion of a-Si layers of 3 and 20 nm, respectively, which agrees with the results for saturated crystallinity. Moreover, upon the insertion of an intermediate-thickness (5-7 nm) a- Si layer, the nucleation rate and saturated crystallinity increased. These phenomena were explained on the basis of the Si-concentration profiles at interfaces. Thus, interface modulation is effective for realizing large-grain polycrystalline Ge.
AB - The effects of amorphous-Si (a-Si) layer (thickness: 0-20 nm) insertion on low-temperature (<450 °C) solid-phase crystallization of a-Ge films (50 nm) were investigated. Upon the insertion of an ultrathin (<3 μm) a-Si layer, incubation time increased and saturated crystallinity slightly increased. On the other hand, upon the insertion of a thick (>10 μm) a-Si layer, incubation time significantly decreased and saturated crystallinity decreased. Grain sizes obtained at 425 °C were ̃200 and ̃50nm upon the insertion of a-Si layers of 3 and 20 nm, respectively, which agrees with the results for saturated crystallinity. Moreover, upon the insertion of an intermediate-thickness (5-7 nm) a- Si layer, the nucleation rate and saturated crystallinity increased. These phenomena were explained on the basis of the Si-concentration profiles at interfaces. Thus, interface modulation is effective for realizing large-grain polycrystalline Ge.
UR - http://www.scopus.com/inward/record.url?scp=77952472644&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=77952472644&partnerID=8YFLogxK
U2 - 10.1143/JJAP.48.03B004
DO - 10.1143/JJAP.48.03B004
M3 - Article
AN - SCOPUS:77952472644
VL - 48
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
SN - 0021-4922
IS - 3 PART 3
M1 - 03B004
ER -