Effects of Si layer thickness on solid-phase crystallization of stacked Ge/Si/SiO2 structures (Special issue: Active-matrix flatpanel displays and devices: TFT technologies and FPD materials)

Taizoh Sadoh, Hiroki Ohta, Masanobu Miyao

Research output: Contribution to journalArticlepeer-review

Original languageEnglish
Pages (from-to)03B004-1〜3
JournalJapanese Journal of Applied Physics, Part 2: Letters
Volume48
Issue number3
Publication statusPublished - Mar 2009

Cite this